Inventor
BAE YONG CHEOL
KR23 patents
⚠️ This page may combine multiple inventors who share the name “BAE YONG CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS6343040B2Jan 29, 2002
Auto precharge control signal generating circuits for semiconductor memory devices and auto precharge control methods
SAMSUNG ELECTRONICS CO LTD23 citations92
US6275429B1Aug 14, 2001
Memory device and equalizing circuit for memory device
SAMSUNG ELECTRONICS CO LTD21 citations92
US6192429B1Feb 20, 2001
Memory device having a controller capable of disabling data input/output mask (DQM) input buffer during portions of a read operation and a write operation
SAMSUNG ELECTRONICS CO LTD26 citations92
US6079023AJun 20, 2000
Multi-bank memory devices having common standby voltage generator for powering a plurality of memory array banks in response to memory array bank enable signals
SAMSUNG ELECTRONICS CO LTD51 citations92
US5796293AAug 18, 1998
Voltage boosting circuits having backup voltage boosting capability
SAMSUNG ELECTRONICS CO LTD34 citations92
US9947378B2Apr 17, 2018
Semiconductor memory device, a memory module including the same, and a memory system including the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US6487132B2Nov 26, 2002
Integrated circuit memory devices having multiple input/output buses and precharge circuitry for precharging the input/output buses between write operations
SAMSUNG ELECTRONICS CO LTD14 citations84
US6373754B1Apr 16, 2002
Semiconductor memory device having stable internal supply voltage driver
SAMSUNG ELECTRONICS CO LTD17 citations84
US6087891AJul 11, 2000
Integrated power supply voltage generators having reduced susceptibility to parasitic latch-up during set-up mode operation
SAMSUNG ELECTRONICS CO LTD17 citations84
US6046954AApr 4, 2000
Circuit for controlling internal voltage for output buffer of semiconductor memory device and method therefor
SAMSUNG ELECTRONICS CO LTD9 citations74
US9608631B2Mar 28, 2017
Semiconductor memory device, a memory module including the same, and a memory system including the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US6181635B1Jan 30, 2001
Reduced delay address decoders and decoding methods for integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD14 citations73
USRE47312EMar 19, 2019
Output driver, devices having the same, and ground termination
SAMSUNG ELECTRONICS CO LTD5 citations72
US9830960B2Nov 28, 2017
Data output circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US9209764B2Dec 8, 2015
Small signal receiver and integrated circuit including the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US9805774B2Oct 31, 2017
Semiconductor memory device, a memory module including the same, and a memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9030262B2May 12, 2015
Input receiver circuit having single-to-differential amplifier, and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD1 citations52