P

Inventor

LEE SOO CHEOL

KR45 patents
⚠️ This page may combine multiple inventors who share the name “LEE SOO CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

37 patents
US5041886AAug 20, 1991

Nonvolatile semiconductor memory device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD226 citations99
US6573563B2Jun 3, 2003

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs

SAMSUNG ELECTRONICS CO LTD42 citations93
US6274906B1Aug 14, 2001

MOS transistor for high-speed and high-performance operation and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD20 citations93
US5936296AAug 10, 1999

Integrated circuits having metallic fuse links

SAMSUNG ELECTRONICS CO LTD49 citations93
US5821590AOct 13, 1998

Semiconductor interconnection device with both n- and p-doped regions

SAMSUNG ELECTRONICS CO LTD42 citations93
US5073513ADec 17, 1991

Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate

SAMSUNG ELECTRONICS CO LTD43 citations93
US7482703B2Jan 27, 2009

Semiconductor device having align mark layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD21 citations92
US6927452B2Aug 9, 2005

Semiconductor device having dual isolation structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD36 citations92
US6773995B2Aug 10, 2004

Double diffused MOS transistor and method for manufacturing same

SAMSUNG ELECTRONICS CO LTD32 citations92
US6465337B1Oct 15, 2002

Methods of fabricating integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein

SAMSUNG ELECTRONICS CO LTD18 citations92
US6348730B1Feb 19, 2002

Semiconductor device and fabricating method therefor

SAMSUNG ELECTRONICS CO LTD20 citations92
US6163074ADec 19, 2000

Integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein

SAMSUNG ELECTRONICS CO LTD39 citations92
US6552438B2Apr 22, 2003

Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same

SAMSUNG ELECTRONICS CO LTD34 citations88
US7297604B2Nov 20, 2007

Semiconductor device having dual isolation structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7671831B2Mar 2, 2010

Output buffer with improved output deviation and source driver for flat panel display having the output buffer

SAMSUNG ELECTRONICS CO LTD11 citations83
US6232189B1May 15, 2001

Manufacturing method of semiconductor device

SAMSUNG ELECTRONICS CO LTD17 citations83
US7808468B2Oct 5, 2010

Source driver for controlling a slew rate and a method for controlling the slew rate

SAMSUNG ELECTRONICS CO LTD14 citations82
US7593261B2Sep 22, 2009

EEPROM devices and methods of operating and fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations82
US7545423B2Jun 9, 2009

Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations82
US6020641AFeb 1, 2000

Multilevel interconnection with low contact resistance in a semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations74
US7378708B2May 27, 2008

Transistor having a protruded drain

SAMSUNG ELECTRONICS CO LTD6 citations73
US7193271B2Mar 20, 2007

Transistor having a protruded drain

SAMSUNG ELECTRONICS CO LTD5 citations73
US6486053B2Nov 26, 2002

Semiconductor device and fabricating method therefor

SAMSUNG ELECTRONICS CO LTD5 citations73
US5989968ANov 23, 1999

Method of making bipolar transistor having reduced resistance

SAMSUNG ELECTRONICS CO LTD7 citations73
US5742078AApr 21, 1998

Integrated circuit SRAM cell layouts

SAMSUNG ELECTRONICS CO LTD12 citations73
US6836399B2Dec 28, 2004

Integrated circuit metal-insulator-metal capacitors formed of pairs of capacitors connected in antiparallel

SAMSUNG ELECTRONICS CO LTD8 citations66
US6924530B2Aug 2, 2005

Double diffused MOS transistor and method for manufacturing same

SAMSUNG ELECTRONICS CO LTD4 citations63
US6482662B1Nov 19, 2002

Semiconductor device fabricating method

SAMSUNG ELECTRONICS CO LTD6 citations63
US6461924B2Oct 8, 2002

MOS transistor for high-speed and high-performance operation and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US6171950B1Jan 9, 2001

Method for forming a multilevel interconnection with low contact resistance in a semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations63
US5837602ANov 17, 1998

Method of manufacturing doped interconnect

SAMSUNG ELECTRONICS CO LTD2 citations63
US7419880B2Sep 2, 2008

Transistor having a protruded drain

SAMSUNG ELECTRONICS CO LTD2 citations62
USRE36440EDec 14, 1999

Integrated circuit SRAM cell layouts

SAMSUNG ELECTRONICS CO LTD6 citations62
US7525847B2Apr 28, 2009

Semiconductor device and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7446000B2Nov 4, 2008

Method of fabricating semiconductor device having gate dielectrics with different thicknesses

SAMSUNG ELECTRONICS CO LTD0 citations51
US8050091B2Nov 1, 2011

EEPROM devices and methods of operating and fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations50
US5982007ANov 9, 1999

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations48

SAMSUNG ELECTRO MECH

2 patents

LG IND SYSTEMS CO LTD

1 patent

LG OTIS ELEVATOR CO

1 patent

SAMSUNG EECTRONICS CO LTD

1 patent

SAMSUNG ELECRONICS CO LTD

1 patent

HYUNDAI MOTOR CO LTD

1 patent

CHANG DONG-RYUL

1 patent