Inventor
LEE SOO CHEOL
KR45 patents
⚠️ This page may combine multiple inventors who share the name “LEE SOO CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
37 patentsUS5041886AAug 20, 1991
Nonvolatile semiconductor memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD226 citations99
US6573563B2Jun 3, 2003
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs
SAMSUNG ELECTRONICS CO LTD42 citations93
US6274906B1Aug 14, 2001
MOS transistor for high-speed and high-performance operation and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD20 citations93
US5936296AAug 10, 1999
Integrated circuits having metallic fuse links
SAMSUNG ELECTRONICS CO LTD49 citations93
US5821590AOct 13, 1998
Semiconductor interconnection device with both n- and p-doped regions
SAMSUNG ELECTRONICS CO LTD42 citations93
US5073513ADec 17, 1991
Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
SAMSUNG ELECTRONICS CO LTD43 citations93
US7482703B2Jan 27, 2009
Semiconductor device having align mark layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD21 citations92
US6927452B2Aug 9, 2005
Semiconductor device having dual isolation structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD36 citations92
US6773995B2Aug 10, 2004
Double diffused MOS transistor and method for manufacturing same
SAMSUNG ELECTRONICS CO LTD32 citations92
US6465337B1Oct 15, 2002
Methods of fabricating integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein
SAMSUNG ELECTRONICS CO LTD18 citations92
US6348730B1Feb 19, 2002
Semiconductor device and fabricating method therefor
SAMSUNG ELECTRONICS CO LTD20 citations92
US6163074ADec 19, 2000
Integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein
SAMSUNG ELECTRONICS CO LTD39 citations92
US6552438B2Apr 22, 2003
Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD34 citations88
US7297604B2Nov 20, 2007
Semiconductor device having dual isolation structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7671831B2Mar 2, 2010
Output buffer with improved output deviation and source driver for flat panel display having the output buffer
SAMSUNG ELECTRONICS CO LTD11 citations83
US6232189B1May 15, 2001
Manufacturing method of semiconductor device
SAMSUNG ELECTRONICS CO LTD17 citations83
US7808468B2Oct 5, 2010
Source driver for controlling a slew rate and a method for controlling the slew rate
SAMSUNG ELECTRONICS CO LTD14 citations82
US7593261B2Sep 22, 2009
EEPROM devices and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US7545423B2Jun 9, 2009
Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations82
US6020641AFeb 1, 2000
Multilevel interconnection with low contact resistance in a semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations74
US7378708B2May 27, 2008
Transistor having a protruded drain
SAMSUNG ELECTRONICS CO LTD6 citations73
US7193271B2Mar 20, 2007
Transistor having a protruded drain
SAMSUNG ELECTRONICS CO LTD5 citations73
US6486053B2Nov 26, 2002
Semiconductor device and fabricating method therefor
SAMSUNG ELECTRONICS CO LTD5 citations73
US5989968ANov 23, 1999
Method of making bipolar transistor having reduced resistance
SAMSUNG ELECTRONICS CO LTD7 citations73
US5742078AApr 21, 1998
Integrated circuit SRAM cell layouts
SAMSUNG ELECTRONICS CO LTD12 citations73
US6836399B2Dec 28, 2004
Integrated circuit metal-insulator-metal capacitors formed of pairs of capacitors connected in antiparallel
SAMSUNG ELECTRONICS CO LTD8 citations66
US6924530B2Aug 2, 2005
Double diffused MOS transistor and method for manufacturing same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6482662B1Nov 19, 2002
Semiconductor device fabricating method
SAMSUNG ELECTRONICS CO LTD6 citations63
US6461924B2Oct 8, 2002
MOS transistor for high-speed and high-performance operation and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US6171950B1Jan 9, 2001
Method for forming a multilevel interconnection with low contact resistance in a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations63
US5837602ANov 17, 1998
Method of manufacturing doped interconnect
SAMSUNG ELECTRONICS CO LTD2 citations63
US7419880B2Sep 2, 2008
Transistor having a protruded drain
SAMSUNG ELECTRONICS CO LTD2 citations62
USRE36440EDec 14, 1999
Integrated circuit SRAM cell layouts
SAMSUNG ELECTRONICS CO LTD6 citations62
US7525847B2Apr 28, 2009
Semiconductor device and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7446000B2Nov 4, 2008
Method of fabricating semiconductor device having gate dielectrics with different thicknesses
SAMSUNG ELECTRONICS CO LTD0 citations51
US8050091B2Nov 1, 2011
EEPROM devices and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US5982007ANov 9, 1999
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations48