Inventor
CHEN HAN-PING
US26 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HAN-PING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
9 patentsUS10957394B1Mar 23, 2021
NAND string pre-charge during programming by injecting holes via substrate
SANDISK TECHNOLOGIES LLC14 citations86
US10541035B1Jan 21, 2020
Read bias adjustment for compensating threshold voltage shift due to lateral charge movement
SANDISK TECHNOLOGIES LLC6 citations82
US12046289B2Jul 23, 2024
Sub-block status dependent device operation
SANDISK TECHNOLOGIES LLC2 citations73
US11139031B1Oct 5, 2021
Neighbor word line compensation full sequence program scheme
SANDISK TECHNOLOGIES LLC6 citations73
US10964402B1Mar 30, 2021
Reprogramming memory cells to tighten threshold voltage distributions and improve data retention
SANDISK TECHNOLOGIES LLC3 citations73
US10636501B1Apr 28, 2020
Memory device with reduced neighbor word line interference using adjustable voltage on source-side unselected word line
SANDISK TECHNOLOGIES LLC4 citations73
US11854620B2Dec 26, 2023
Word line zoned adaptive initial program voltage for non-volatile memory
SANDISK TECHNOLOGIES LLC3 citations71
US11521691B1Dec 6, 2022
Triggering next state verify in program loop for nonvolatile memory
SANDISK TECHNOLOGIES LLC4 citations71
US11972810B2Apr 30, 2024
Read pass voltage dependent recovery voltage setting between program and program verify
SANDISK TECHNOLOGIES LLC0 citations52
TAIWAN SEMICONDUCTOR MFG
8 patentsUS7153744B2Dec 26, 2006
Method of forming self-aligned poly for embedded flash
TAIWAN SEMICONDUCTOR MFG72 citations98
US6358827B1Mar 19, 2002
Method of forming a squared-off, vertically oriented polysilicon spacer gate
TAIWAN SEMICONDUCTOR MFG111 citations94
US6828183B1Dec 7, 2004
Process for high voltage oxide and select gate poly for split-gate flash memory
TAIWAN SEMICONDUCTOR MFG27 citations92
US6649489B1Nov 18, 2003
Poly etching solution to improve silicon trench for low STI profile
TAIWAN SEMICONDUCTOR MFG39 citations92
US6482700B2Nov 19, 2002
Split gate field effect transistor (FET) device with enhanced electrode registration and method for fabrication thereof
TAIWAN SEMICONDUCTOR MFG20 citations92
US6569736B1May 27, 2003
Method for fabricating square polysilicon spacers for a split gate flash memory device by multi-step polysilicon etch
TAIWAN SEMICONDUCTOR MFG22 citations90
US6849499B2Feb 1, 2005
Process for flash memory cell
TAIWAN SEMICONDUCTOR MFG2 citations63
US6819593B2Nov 16, 2004
Architecture to suppress bit-line leakage
TAIWAN SEMICONDUCTOR MFG4 citations62
(unassigned)
5 patentsUS6285624B1Sep 4, 2001
Multilevel memory access method
64 citations96
US6781363B2Aug 24, 2004
Memory sorting method and apparatus
16 citations84
US6222211B1Apr 24, 2001
Memory package method and apparatus
10 citations73
US6675319B2Jan 6, 2004
Memory access and data control
3 citations62
US6125068ASep 26, 2000
Memory access control
1 citations52