Inventor
SOHN KYO-MIN
KR44 patents
⚠️ This page may combine multiple inventors who share the name “SOHN KYO-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
37 patentsUS9640233B2May 2, 2017
Semiconductor memory device having inverting circuit and controlling method there of
SAMSUNG ELECTRONICS CO LTD37 citations98
US9831003B2Nov 28, 2017
Device and method for repairing memory cell and memory system including the device
SAMSUNG ELECTRONICS CO LTD30 citations94
US6313694B1Nov 6, 2001
Internal power voltage generating circuit having a single drive transistor for stand-by and active modes
SAMSUNG ELECTRONICS CO LTD50 citations92
US10846169B2Nov 24, 2020
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US10347355B2Jul 9, 2019
Device and method for repairing memory cell and memory system including the device
SAMSUNG ELECTRONICS CO LTD4 citations84
US9659669B2May 23, 2017
Device and method for repairing memory cell and memory system including the device
SAMSUNG ELECTRONICS CO LTD6 citations84
US8018245B2Sep 13, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations84
US6618299B2Sep 9, 2003
Semiconductor memory device with redundancy
SAMSUNG ELECTRONICS CO LTD17 citations84
US10818375B2Oct 27, 2020
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US9589674B2Mar 7, 2017
Method of operating memory device and methods of writing and reading data in memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US9390780B2Jul 12, 2016
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US6483770B2Nov 19, 2002
Synchronous semiconductor memory device and method for operating same
SAMSUNG ELECTRONICS CO LTD11 citations73
US6456551B2Sep 24, 2002
Semiconductor memory device having prefetch operation mode and data transfer method for reducing the number of main data lines
SAMSUNG ELECTRONICS CO LTD8 citations73
US11049584B2Jun 29, 2021
Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10678631B2Jun 9, 2020
Device and system including adaptive repair circuit
SAMSUNG ELECTRONICS CO LTD1 citations71
US10296414B2May 21, 2019
Device and system including adaptive repair circuit
SAMSUNG ELECTRONICS CO LTD1 citations71
US9287009B2Mar 15, 2016
Repair circuit and fuse circuit
SAMSUNG ELECTRONICS CO LTD4 citations71
US9859022B2Jan 2, 2018
Memory device having a shareable error correction code cell array
SAMSUNG ELECTRONICS CO LTD4 citations70
US10014037B2Jul 3, 2018
Semiconductor memory package including memory device with inverting circuit
SAMSUNG ELECTRONICS CO LTD1 citations63
US7546491B2Jun 9, 2009
Semiconductor memory device with standby current failure judging function and method for judging standby current failure
SAMSUNG ELECTRONICS CO LTD3 citations63
US7193903B2Mar 20, 2007
Method of controlling an integrated circuit capable of simultaneously performing a data read operation and a data write operation
SAMSUNG ELECTRONICS CO LTD2 citations63
US6826088B2Nov 30, 2004
Method and integrated circuit capable of reading and writing data simultaneously
SAMSUNG ELECTRONICS CO LTD4 citations63
US6271718B1Aug 7, 2001
Internal voltage converter for low operating voltage semiconductor memory
SAMSUNG ELECTRONICS CO LTD2 citations63
US6150873ANov 21, 2000
Internal voltage converter for low operating voltage semiconductor memory
SAMSUNG ELECTRONICS CO LTD4 citations63
US9171605B1Oct 27, 2015
Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same
SAMSUNG ELECTRONICS CO LTD1 citations62
USRE50078EAug 13, 2024
Device and system including adaptive repair circuit
SAMSUNG ELECTRONICS CO LTD1 citations60
US11817174B2Nov 14, 2023
Memory system for access concentration decrease management and access concentration decrease method
SAMSUNG ELECTRONICS CO LTD0 citations60
US11024352B2Jun 1, 2021
Memory system for access concentration decrease management and access concentration decrease method
SAMSUNG ELECTRONICS CO LTD0 citations60
US10468092B2Nov 5, 2019
Memory device for controlling refresh operation by using cell characteristic flags
SAMSUNG ELECTRONICS CO LTD1 citations59
US7848164B2Dec 7, 2010
Semiconductor memory device having redundancy memory block and cell array structure thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US9941247B2Apr 10, 2018
Stack semiconductor device and memory device with driving circuits connected to through-silicon-vias (TSV) in different substrates in a staggered manner
SAMSUNG ELECTRONICS CO LTD0 citations51
US9858981B2Jan 2, 2018
Semiconductor memory devices including redundancy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US9524770B2Dec 20, 2016
Semiconductor memory devices including redundancy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US9460766B2Oct 4, 2016
Memory device, and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US10529395B2Jan 7, 2020
Memory system for access concentration decrease management and access concentration decrease method
SAMSUNG ELECTRONICS CO LTD0 citations50
US7415590B2Aug 19, 2008
Integrated circuit having a memory cell array capable of simultaneously performing a data read operation and a data write operation
SAMSUNG ELECTRONICS CO LTD0 citations42
US10672445B2Jun 2, 2020
Memory device including local support for target data searching and methods of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
SOHN KYO-MIN
4 patentsUS9087613B2Jul 21, 2015
Device and method for repairing memory cell and memory system including the device
SOHN KYO-MIN18 citations92
US9087592B2Jul 21, 2015
Semiconductor memory device
SOHN KYO-MIN8 citations83
US8495437B2Jul 23, 2013
Semiconductor memory device
SOHN KYO-MIN6 citations72
US8299831B2Oct 30, 2012
Semiconductor device
SOHN KYO-MIN4 citations62