P

Inventor

SOHN KYO-MIN

KR44 patents
⚠️ This page may combine multiple inventors who share the name “SOHN KYO-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

37 patents
US9640233B2May 2, 2017

Semiconductor memory device having inverting circuit and controlling method there of

SAMSUNG ELECTRONICS CO LTD37 citations98
US9831003B2Nov 28, 2017

Device and method for repairing memory cell and memory system including the device

SAMSUNG ELECTRONICS CO LTD30 citations94
US6313694B1Nov 6, 2001

Internal power voltage generating circuit having a single drive transistor for stand-by and active modes

SAMSUNG ELECTRONICS CO LTD50 citations92
US10846169B2Nov 24, 2020

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US10347355B2Jul 9, 2019

Device and method for repairing memory cell and memory system including the device

SAMSUNG ELECTRONICS CO LTD4 citations84
US9659669B2May 23, 2017

Device and method for repairing memory cell and memory system including the device

SAMSUNG ELECTRONICS CO LTD6 citations84
US8018245B2Sep 13, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations84
US6618299B2Sep 9, 2003

Semiconductor memory device with redundancy

SAMSUNG ELECTRONICS CO LTD17 citations84
US10818375B2Oct 27, 2020

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US9589674B2Mar 7, 2017

Method of operating memory device and methods of writing and reading data in memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US9390780B2Jul 12, 2016

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US6483770B2Nov 19, 2002

Synchronous semiconductor memory device and method for operating same

SAMSUNG ELECTRONICS CO LTD11 citations73
US6456551B2Sep 24, 2002

Semiconductor memory device having prefetch operation mode and data transfer method for reducing the number of main data lines

SAMSUNG ELECTRONICS CO LTD8 citations73
US11049584B2Jun 29, 2021

Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10678631B2Jun 9, 2020

Device and system including adaptive repair circuit

SAMSUNG ELECTRONICS CO LTD1 citations71
US10296414B2May 21, 2019

Device and system including adaptive repair circuit

SAMSUNG ELECTRONICS CO LTD1 citations71
US9287009B2Mar 15, 2016

Repair circuit and fuse circuit

SAMSUNG ELECTRONICS CO LTD4 citations71
US9859022B2Jan 2, 2018

Memory device having a shareable error correction code cell array

SAMSUNG ELECTRONICS CO LTD4 citations70
US10014037B2Jul 3, 2018

Semiconductor memory package including memory device with inverting circuit

SAMSUNG ELECTRONICS CO LTD1 citations63
US7546491B2Jun 9, 2009

Semiconductor memory device with standby current failure judging function and method for judging standby current failure

SAMSUNG ELECTRONICS CO LTD3 citations63
US7193903B2Mar 20, 2007

Method of controlling an integrated circuit capable of simultaneously performing a data read operation and a data write operation

SAMSUNG ELECTRONICS CO LTD2 citations63
US6826088B2Nov 30, 2004

Method and integrated circuit capable of reading and writing data simultaneously

SAMSUNG ELECTRONICS CO LTD4 citations63
US6271718B1Aug 7, 2001

Internal voltage converter for low operating voltage semiconductor memory

SAMSUNG ELECTRONICS CO LTD2 citations63
US6150873ANov 21, 2000

Internal voltage converter for low operating voltage semiconductor memory

SAMSUNG ELECTRONICS CO LTD4 citations63
US9171605B1Oct 27, 2015

Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same

SAMSUNG ELECTRONICS CO LTD1 citations62
USRE50078EAug 13, 2024

Device and system including adaptive repair circuit

SAMSUNG ELECTRONICS CO LTD1 citations60
US11817174B2Nov 14, 2023

Memory system for access concentration decrease management and access concentration decrease method

SAMSUNG ELECTRONICS CO LTD0 citations60
US11024352B2Jun 1, 2021

Memory system for access concentration decrease management and access concentration decrease method

SAMSUNG ELECTRONICS CO LTD0 citations60
US10468092B2Nov 5, 2019

Memory device for controlling refresh operation by using cell characteristic flags

SAMSUNG ELECTRONICS CO LTD1 citations59
US7848164B2Dec 7, 2010

Semiconductor memory device having redundancy memory block and cell array structure thereof

SAMSUNG ELECTRONICS CO LTD1 citations52
US9941247B2Apr 10, 2018

Stack semiconductor device and memory device with driving circuits connected to through-silicon-vias (TSV) in different substrates in a staggered manner

SAMSUNG ELECTRONICS CO LTD0 citations51
US9858981B2Jan 2, 2018

Semiconductor memory devices including redundancy memory cells

SAMSUNG ELECTRONICS CO LTD0 citations51
US9524770B2Dec 20, 2016

Semiconductor memory devices including redundancy memory cells

SAMSUNG ELECTRONICS CO LTD0 citations51
US9460766B2Oct 4, 2016

Memory device, and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations51
US10529395B2Jan 7, 2020

Memory system for access concentration decrease management and access concentration decrease method

SAMSUNG ELECTRONICS CO LTD0 citations50
US7415590B2Aug 19, 2008

Integrated circuit having a memory cell array capable of simultaneously performing a data read operation and a data write operation

SAMSUNG ELECTRONICS CO LTD0 citations42
US10672445B2Jun 2, 2020

Memory device including local support for target data searching and methods of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations41

SOHN KYO-MIN

4 patents

SHIN SANG-HOON

1 patent

LEE YUN-YOUNG

1 patent

HYUN KI HO

1 patent