P

Inventor

BUYNOSKI MATTHEW

US27 patents
⚠️ This page may combine multiple inventors who share the name “BUYNOSKI MATTHEW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

18 patents
US6716684B1Apr 6, 2004

Method of making a self-aligned triple gate silicon-on-insulator device

ADVANCED MICRO DEVICES INC160 citations99
US6396108B1May 28, 2002

Self-aligned double gate silicon-on-insulator (SOI) device

ADVANCED MICRO DEVICES INC286 citations99
US6087208AJul 11, 2000

Method for increasing gate capacitance by using both high and low dielectric gate material

ADVANCED MICRO DEVICES INC137 citations99
US6190985B1Feb 20, 2001

Practical way to remove heat from SOI devices

ADVANCED MICRO DEVICES INC146 citations98
US6465309B1Oct 15, 2002

Silicide gate transistors

ADVANCED MICRO DEVICES INC57 citations96
US6100558AAug 8, 2000

Semiconductor device having enhanced gate capacitance by using both high and low dielectric materials

ADVANCED MICRO DEVICES INC43 citations96
US6727546B2Apr 27, 2004

Self-aligned triple gate silicon-on-insulator (SOI) device

ADVANCED MICRO DEVICES INC20 citations93
US6500743B1Dec 31, 2002

Method of copper-polysilicon T-gate formation

ADVANCED MICRO DEVICES INC36 citations93
US6433379B1Aug 13, 2002

Tantalum anodization for in-laid copper metallization capacitor

ADVANCED MICRO DEVICES INC43 citations93
US6602781B1Aug 5, 2003

Metal silicide gate transistors

ADVANCED MICRO DEVICES INC52 citations92
US6492209B1Dec 10, 2002

Selectively thin silicon film for creating fully and partially depleted SOI on same wafer

ADVANCED MICRO DEVICES INC28 citations92
US6166411ADec 26, 2000

Heat removal from SOI devices by using metal substrates

ADVANCED MICRO DEVICES INC31 citations92
US6861325B1Mar 1, 2005

Methods for fabricating CMOS-compatible lateral bipolar junction transistors

ADVANCED MICRO DEVICES INC9 citations74
US6660608B1Dec 9, 2003

Method for manufacturing CMOS device having low gate resistivity using aluminum implant

ADVANCED MICRO DEVICES INC11 citations74
US5756381AMay 26, 1998

Method providing, an enriched source side extension and a lightly doped extension

ADVANCED MICRO DEVICES INC7 citations74
US6329718B1Dec 11, 2001

Method for reducing stress-induced voids for 0.25mμ and smaller semiconductor chip technology by annealing interconnect lines and using low bias voltage and low interlayer dielectric deposition rate and semiconductor chip made thereby

ADVANCED MICRO DEVICES INC12 citations72
US6518185B1Feb 11, 2003

Integration scheme for non-feature-size dependent cu-alloy introduction

ADVANCED MICRO DEVICES INC5 citations62
US6492258B1Dec 10, 2002

METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-μM AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBY

ADVANCED MICRO DEVICES INC3 citations61

SPANSION LLC

3 patents

CYPRESS SEMICONDUCTOR CORP

2 patents

NAT SEMICONDUCTOR CORP

1 patent

RATHOR MANUJ

1 patent

BUYNOSKI MATTHEW

1 patent

AVANZINO STEVEN

1 patent