Inventor
BUYNOSKI MATTHEW
US27 patents
⚠️ This page may combine multiple inventors who share the name “BUYNOSKI MATTHEW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
18 patentsUS6716684B1Apr 6, 2004
Method of making a self-aligned triple gate silicon-on-insulator device
ADVANCED MICRO DEVICES INC160 citations99
US6396108B1May 28, 2002
Self-aligned double gate silicon-on-insulator (SOI) device
ADVANCED MICRO DEVICES INC286 citations99
US6087208AJul 11, 2000
Method for increasing gate capacitance by using both high and low dielectric gate material
ADVANCED MICRO DEVICES INC137 citations99
US6190985B1Feb 20, 2001
Practical way to remove heat from SOI devices
ADVANCED MICRO DEVICES INC146 citations98
US6465309B1Oct 15, 2002
Silicide gate transistors
ADVANCED MICRO DEVICES INC57 citations96
US6100558AAug 8, 2000
Semiconductor device having enhanced gate capacitance by using both high and low dielectric materials
ADVANCED MICRO DEVICES INC43 citations96
US6727546B2Apr 27, 2004
Self-aligned triple gate silicon-on-insulator (SOI) device
ADVANCED MICRO DEVICES INC20 citations93
US6500743B1Dec 31, 2002
Method of copper-polysilicon T-gate formation
ADVANCED MICRO DEVICES INC36 citations93
US6433379B1Aug 13, 2002
Tantalum anodization for in-laid copper metallization capacitor
ADVANCED MICRO DEVICES INC43 citations93
US6602781B1Aug 5, 2003
Metal silicide gate transistors
ADVANCED MICRO DEVICES INC52 citations92
US6492209B1Dec 10, 2002
Selectively thin silicon film for creating fully and partially depleted SOI on same wafer
ADVANCED MICRO DEVICES INC28 citations92
US6166411ADec 26, 2000
Heat removal from SOI devices by using metal substrates
ADVANCED MICRO DEVICES INC31 citations92
US6861325B1Mar 1, 2005
Methods for fabricating CMOS-compatible lateral bipolar junction transistors
ADVANCED MICRO DEVICES INC9 citations74
US6660608B1Dec 9, 2003
Method for manufacturing CMOS device having low gate resistivity using aluminum implant
ADVANCED MICRO DEVICES INC11 citations74
US5756381AMay 26, 1998
Method providing, an enriched source side extension and a lightly doped extension
ADVANCED MICRO DEVICES INC7 citations74
US6329718B1Dec 11, 2001
Method for reducing stress-induced voids for 0.25mμ and smaller semiconductor chip technology by annealing interconnect lines and using low bias voltage and low interlayer dielectric deposition rate and semiconductor chip made thereby
ADVANCED MICRO DEVICES INC12 citations72
US6518185B1Feb 11, 2003
Integration scheme for non-feature-size dependent cu-alloy introduction
ADVANCED MICRO DEVICES INC5 citations62
US6492258B1Dec 10, 2002
METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-μM AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBY
ADVANCED MICRO DEVICES INC3 citations61
SPANSION LLC
3 patentsUS7035141B1Apr 25, 2006
Diode array architecture for addressing nanoscale resistive memory arrays
SPANSION LLC111 citations97
US7468525B2Dec 23, 2008
Test structures for development of metal-insulator-metal (MIM) devices
SPANSION LLC4 citations61
US7468296B1Dec 23, 2008
Thin film germanium diode with low reverse breakdown
SPANSION LLC4 citations60