Inventor · disambiguated record
Ganesh Upadhyaya
Also filed as: UPADHYAYA GANESH
9 granted patents·1 pending application·459 citations·filing 2011–2022
87Inventor score
Top patents by PatentIndex Score
10 records- 0196US11211253B2Atomic layer deposition and etch in a single plasma chamber for critical dimension controlLAM RES CORP·Filed 2020·Granted Dec 28, 2021·8 cites·18 claims
- 0296US9252238B1Semiconductor structures with coplanar recessed gate layers and fabrication methodsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 2, 2016·427 cites·20 claims
- 0392US10734238B2Atomic layer deposition and etch in a single plasma chamber for critical dimension controlLAM RES CORP·Filed 2017·Granted Aug 4, 2020·10 cites·18 claims
- 0486US9466466B1Determination of semiconductor chamber operating parameters for the optimization of critical dimension uniformityLAM RES CORP·Filed 2015·Granted Oct 11, 2016·6 cites·20 claims
- 0580US10515815B2Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formationLAM RES CORP·Filed 2017·Granted Dec 24, 2019·4 cites·17 claims
- 0678US10658174B2Atomic layer deposition and etch for reducing roughnessLAM RES CORP·Filed 2017·Granted May 19, 2020·3 cites·12 claims
- 0760US11170997B2Atomic layer deposition and etch for reducing roughnessLAM RES CORP·Filed 2020·Granted Nov 9, 2021·0 cites·14 claims
- 0859US8431461B1Silicon nitride dry trim without top pulldownZHONG QINGHUA·Filed 2011·Granted Apr 30, 2013·1 cites·19 claims
- 0947US2023320062A1Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical couplingLAM RES CORP·Filed 2022·Application pending·0 cites
- 1038US9385003B1Residue free systems and methods for isotropically etching silicon in tight spacesLAM RES CORP·Filed 2015·Granted Jul 5, 2016·0 cites·10 claims
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