Inventor

JANG SEONG-JIN

KR121 patents

⚠️ This page may combine multiple inventors who share the name “JANG SEONG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JANG SEONG-JIN

SAMSUNG ELECTRONICS CO LTD

Circuit and method for controlling on-die signal termination

Integrated circuit device and module with integrated circuits

Devices, circuits and methods for dual voltage generation using single charge pump

On-chip termination apparatus in semiconductor integrated circuit, and method for controlling the same

Semiconductor memory device post-repair circuit and method

Latency control circuit and method thereof and an auto-precharge control circuit and method thereof

Circuits and methods for data bus inversion in a semiconductor memory

Synchronous semiconductor memory devices and data strobe input buffers with an input buffer circuit and a detection circuit for buffering data thereto

Circuit and method for removing skew in data transmitting/receiving system

Memory system, memory device, and output data strobe signal generating method

Method and memory system having mode selection between dual data strobe mode and single data strobe mode with inversion

Input/output interface of an integrated circuit device

Semiconductor devices with reference voltage generators and termination circuits configured to reduce termination mismatch

Methods of operating memory systems in which an active termination value for a memory device is determined at a low clock frequency and commands are applied to the memory device at a higher clock frequency

Circuits and methods for data bus inversion in a semiconductor memory

Memory devices, systems and methods using selective on-die termination

Integrated circuit devices having data inversion circuits therein with multi-bit prefetch structures and methods of operating same

Semiconductor memory devices, memory systems including the same and methods of operating the same

Memory device having error notification function

3D semiconductor device

Memory device with separate read and write gate voltage controls

Semiconductor memory device and data write and read method thereof

Swing limiter

Small swing signal receiver for low power consumption and semiconductor device including the same

Semiconductor memory device and latency signal generating method thereof

Reference voltage generators for reducing and/or eliminating termination mismatch

Semiconductor memory devices having controllable input/output bit architectures

Output circuit of a semiconductor memory device and method of outputting data in a semiconductor memory device

Memory system having data inversion and data inversion method for a memory system

Semiconductor memory device having external data load signal synchronous with data strobe signal and serial-to-parallel data prefetch method thereof

Integrated circuit devices having data inversion circuits therein that reduce simultaneous switching noise and support interleaving of parallel data

Circuit and method for generating internal clock signal

Semiconductor device, a parallel interface system and methods thereof

Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line

Circuit and methods for eliminating skew between signals in semiconductor integrated circuit

Reference voltage generators for reducing and/or eliminating termination mismatch

Memory system, memory device, and output data strobe signal generating method

LG SEMICON CO LTD

Dynamic random access memory having self-test function

Data output buffer for memory device

BAE SEUNG-JUN

Data training system and method thereof

Semiconductor device, a parallel interface system and methods thereof

YI CHUL-WOO

Memory device from which dummy edge memory block is removed

Memory device from which dummy edge memory block is removed

MOON JONG-HO

Semiconductor memory device having improved local input/output line precharge scheme

GOLD STAR ELECTRONICS

MOSFET having tapered gate electrode

KANG UK-SONG

3D semiconductor device

LG SEMICON LTD

Column selection circuit

SON JONG-PIL

Memory cell, methods of manufacturing memory cell, and memory device having the same

KIM KI-HEUNG

Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage

CHA SANG-UHN

Semiconductor memory devices, memory systems including the same and method of correcting errors in the same