P

Inventor

HOENIGSCHMID HEINZ

US83 patents
⚠️ This page may combine multiple inventors who share the name “HOENIGSCHMID HEINZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

33 patents
US6490194B2Dec 3, 2002

Serial MRAM device

INFINEON TECHNOLOGIES AG65 citations96
US6353562B2Mar 5, 2002

Integrated semiconductor memory with redundant units for memory cells

INFINEON TECHNOLOGIES AG56 citations96
US6741513B2May 25, 2004

Data memory with a plurality of memory banks

INFINEON TECHNOLOGIES AG38 citations93
US6522579B2Feb 18, 2003

Non-orthogonal MRAM device

INFINEON TECHNOLOGIES AG50 citations93
US6452852B2Sep 17, 2002

Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration

INFINEON TECHNOLOGIES AG24 citations93
US6424563B2Jul 23, 2002

MRAM memory cell

INFINEON TECHNOLOGIES AG37 citations93
US6351422B2Feb 26, 2002

Integrated memory having a differential sense amplifier

INFINEON TECHNOLOGIES AG21 citations93
US6577528B2Jun 10, 2003

Circuit configuration for controlling write and read operations in a magnetoresistive memory configuration

INFINEON TECHNOLOGIES AG21 citations92
US6801471B2Oct 5, 2004

Fuse concept and method of operation

INFINEON TECHNOLOGIES AG30 citations91
US6744662B2Jun 1, 2004

Magnetoresistive memory (MRAM)

INFINEON TECHNOLOGIES AG13 citations84
US6567300B1May 20, 2003

Narrow contact design for magnetic random access memory (MRAM) arrays

INFINEON TECHNOLOGIES AG16 citations84
US7342819B2Mar 11, 2008

Methods for generating a reference voltage and for reading a memory cell and circuit configurations implementing the methods

INFINEON TECHNOLOGIES AG9 citations82
US6898106B2May 24, 2005

Using FeRam/MRAM cells having a high degree of flexibility and compact construction and method of operating the memory device

INFINEON TECHNOLOGIES AG7 citations74
US6757187B2Jun 29, 2004

Integrated magnetoresistive semiconductor memory and fabrication method for the memory

INFINEON TECHNOLOGIES AG11 citations74
US6664158B2Dec 16, 2003

Ferroelectric memory configuration and a method for producing the configuration

INFINEON TECHNOLOGIES AG11 citations74
US6545526B2Apr 8, 2003

Fuse circuit configuration

INFINEON TECHNOLOGIES AG10 citations74
US6392918B2May 21, 2002

Circuit configuration for generating a reference voltage for reading a ferroelectric memory

INFINEON TECHNOLOGIES AG11 citations74
US6292386B1Sep 18, 2001

Integrated memory having cells of the two-transistor/two-capacitor type

INFINEON TECHNOLOGIES AG13 citations74
US6137712AOct 24, 2000

Ferroelectric memory configuration

INFINEON TECHNOLOGIES AG7 citations74
US7599209B2Oct 6, 2009

Memory circuit including a resistive memory element and method for operating such a memory circuit

INFINEON TECHNOLOGIES AG7 citations72
US7428163B2Sep 23, 2008

Method and memory circuit for operating a resistive memory cell

INFINEON TECHNOLOGIES AG8 citations72
US6500677B2Dec 31, 2002

Method for fabricating a ferroelectric memory configuration

INFINEON TECHNOLOGIES AG13 citations72
US7499344B2Mar 3, 2009

Integrated circuit memory having a read circuit

INFINEON TECHNOLOGIES AG5 citations63
US7447053B2Nov 4, 2008

Memory device and method for operating such a memory device

INFINEON TECHNOLOGIES AG4 citations63
US6803618B2Oct 12, 2004

MRAM configuration having selection transistors with a large channel width

INFINEON TECHNOLOGIES AG3 citations63
US6507512B2Jan 14, 2003

Circuit configuration and method for accelerating aging in an MRAM

INFINEON TECHNOLOGIES AG2 citations63
US6504747B2Jan 7, 2003

Integrated memory with plate line segments

INFINEON TECHNOLOGIES AG4 citations63
US6487128B2Nov 26, 2002

Integrated memory having memory cells and reference cells, and operating method for such a memory

INFINEON TECHNOLOGIES AG5 citations63
US6480044B2Nov 12, 2002

Semiconductor circuit configuration

INFINEON TECHNOLOGIES AG2 citations63
US6459626B1Oct 1, 2002

Integrated memory having memory cells and reference cells, and corresponding operating method

INFINEON TECHNOLOGIES AG3 citations63
US6434039B1Aug 13, 2002

Circuit configuration for reading a memory cell having a ferroelectric capacitor

INFINEON TECHNOLOGIES AG3 citations63
US6424558B2Jul 23, 2002

Ferroelectric memory array composed of a multiplicity of memory cells each having at least one selection transistor and one storage capacitor driven via word lines and bit lines

INFINEON TECHNOLOGIES AG5 citations63
US6295219B1Sep 25, 2001

Integrated memory

INFINEON TECHNOLOGIES AG4 citations63

IBM

6 patents

SIEMENS AG

6 patents

INFINEON TECHNOLOGIES CORP

1 patent

QIMONDA AG

1 patent

QIMODA AG

1 patent

KUND MICHAEL

1 patent

MICRON TECHNOLOGY INC

1 patent

Showing the top 50 of 83 patents by PatentIndex Score.