Inventor
HOENIGSCHMID HEINZ
US83 patents
⚠️ This page may combine multiple inventors who share the name “HOENIGSCHMID HEINZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
33 patentsUS6490194B2Dec 3, 2002
Serial MRAM device
INFINEON TECHNOLOGIES AG65 citations96
US6353562B2Mar 5, 2002
Integrated semiconductor memory with redundant units for memory cells
INFINEON TECHNOLOGIES AG56 citations96
US6741513B2May 25, 2004
Data memory with a plurality of memory banks
INFINEON TECHNOLOGIES AG38 citations93
US6522579B2Feb 18, 2003
Non-orthogonal MRAM device
INFINEON TECHNOLOGIES AG50 citations93
US6452852B2Sep 17, 2002
Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration
INFINEON TECHNOLOGIES AG24 citations93
US6424563B2Jul 23, 2002
MRAM memory cell
INFINEON TECHNOLOGIES AG37 citations93
US6351422B2Feb 26, 2002
Integrated memory having a differential sense amplifier
INFINEON TECHNOLOGIES AG21 citations93
US6577528B2Jun 10, 2003
Circuit configuration for controlling write and read operations in a magnetoresistive memory configuration
INFINEON TECHNOLOGIES AG21 citations92
US6801471B2Oct 5, 2004
Fuse concept and method of operation
INFINEON TECHNOLOGIES AG30 citations91
US6744662B2Jun 1, 2004
Magnetoresistive memory (MRAM)
INFINEON TECHNOLOGIES AG13 citations84
US6567300B1May 20, 2003
Narrow contact design for magnetic random access memory (MRAM) arrays
INFINEON TECHNOLOGIES AG16 citations84
US7342819B2Mar 11, 2008
Methods for generating a reference voltage and for reading a memory cell and circuit configurations implementing the methods
INFINEON TECHNOLOGIES AG9 citations82
US6898106B2May 24, 2005
Using FeRam/MRAM cells having a high degree of flexibility and compact construction and method of operating the memory device
INFINEON TECHNOLOGIES AG7 citations74
US6757187B2Jun 29, 2004
Integrated magnetoresistive semiconductor memory and fabrication method for the memory
INFINEON TECHNOLOGIES AG11 citations74
US6664158B2Dec 16, 2003
Ferroelectric memory configuration and a method for producing the configuration
INFINEON TECHNOLOGIES AG11 citations74
US6545526B2Apr 8, 2003
Fuse circuit configuration
INFINEON TECHNOLOGIES AG10 citations74
US6392918B2May 21, 2002
Circuit configuration for generating a reference voltage for reading a ferroelectric memory
INFINEON TECHNOLOGIES AG11 citations74
US6292386B1Sep 18, 2001
Integrated memory having cells of the two-transistor/two-capacitor type
INFINEON TECHNOLOGIES AG13 citations74
US6137712AOct 24, 2000
Ferroelectric memory configuration
INFINEON TECHNOLOGIES AG7 citations74
US7599209B2Oct 6, 2009
Memory circuit including a resistive memory element and method for operating such a memory circuit
INFINEON TECHNOLOGIES AG7 citations72
US7428163B2Sep 23, 2008
Method and memory circuit for operating a resistive memory cell
INFINEON TECHNOLOGIES AG8 citations72
US6500677B2Dec 31, 2002
Method for fabricating a ferroelectric memory configuration
INFINEON TECHNOLOGIES AG13 citations72
US7499344B2Mar 3, 2009
Integrated circuit memory having a read circuit
INFINEON TECHNOLOGIES AG5 citations63
US7447053B2Nov 4, 2008
Memory device and method for operating such a memory device
INFINEON TECHNOLOGIES AG4 citations63
US6803618B2Oct 12, 2004
MRAM configuration having selection transistors with a large channel width
INFINEON TECHNOLOGIES AG3 citations63
US6507512B2Jan 14, 2003
Circuit configuration and method for accelerating aging in an MRAM
INFINEON TECHNOLOGIES AG2 citations63
US6504747B2Jan 7, 2003
Integrated memory with plate line segments
INFINEON TECHNOLOGIES AG4 citations63
US6487128B2Nov 26, 2002
Integrated memory having memory cells and reference cells, and operating method for such a memory
INFINEON TECHNOLOGIES AG5 citations63
US6480044B2Nov 12, 2002
Semiconductor circuit configuration
INFINEON TECHNOLOGIES AG2 citations63
US6459626B1Oct 1, 2002
Integrated memory having memory cells and reference cells, and corresponding operating method
INFINEON TECHNOLOGIES AG3 citations63
US6434039B1Aug 13, 2002
Circuit configuration for reading a memory cell having a ferroelectric capacitor
INFINEON TECHNOLOGIES AG3 citations63
US6424558B2Jul 23, 2002
Ferroelectric memory array composed of a multiplicity of memory cells each having at least one selection transistor and one storage capacitor driven via word lines and bit lines
INFINEON TECHNOLOGIES AG5 citations63
US6295219B1Sep 25, 2001
Integrated memory
INFINEON TECHNOLOGIES AG4 citations63
IBM
6 patentsUS6426269B1Jul 30, 2002
Dummy feature reduction using optical proximity effect correction
IBM210 citations99
US6704230B1Mar 9, 2004
Error detection and correction method and apparatus in a magnetoresistive random access memory
IBM126 citations98
US6037620AMar 14, 2000
DRAM cell with transfer device extending along perimeter of trench storage capacitor
IBM36 citations93
US6944049B2Sep 13, 2005
Magnetic tunnel junction memory cell architecture
IBM31 citations92
US6236258B1May 22, 2001
Wordline driver circuit using ring-shaped devices
IBM13 citations72
US6552378B1Apr 22, 2003
Ultra compact DRAM cell and method of making
IBM4 citations63
SIEMENS AG
6 patentsUS5966315AOct 12, 1999
Semiconductor memory having hierarchical bit line architecture with non-uniform local bit lines
SIEMENS AG95 citations98
US5864496AJan 26, 1999
High density semiconductor memory having diagonal bit lines and dual word lines
SIEMENS AG98 citations98
US5923605AJul 13, 1999
Space-efficient semiconductor memory having hierarchical column select line architecture
SIEMENS AG59 citations96
US5970009AOct 19, 1999
Reduced stand by power consumption in a DRAM
SIEMENS AG28 citations92
US5821592AOct 13, 1998
Dynamic random access memory arrays and methods therefor
SIEMENS AG33 citations92
US6091625AJul 18, 2000
Ferroelectric memory and method for preventing aging in a memory cell
SIEMENS AG29 citations90
INFINEON TECHNOLOGIES CORP
1 patentQIMONDA AG
1 patentQIMODA AG
1 patentKUND MICHAEL
1 patentMICRON TECHNOLOGY INC
1 patentShowing the top 50 of 83 patents by PatentIndex Score.