Inventor

YIN HUAXIANG

KR93 patents

⚠️ This page may combine multiple inventors who share the name “YIN HUAXIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YIN HUAXIANG

SAMSUNG ELECTRONICS CO LTD

Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same

Method of manufacturing single crystal Si film

Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Inverted nonvolatile memory device, stack module, and method of fabricating the same

Poly-Si thin film transistor and organic light-emitting display having the same

Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device

Method of manufacturing a thin film transistor

Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same

Transistor, inverter including the same and methods of manufacturing transistor and inverter

Poly-Si thin film transistor and organic light-emitting display having the same

Inverter, method of manufacturing the same, and logic circuit including the inverter

Thin film transistor and method of manufacturing the same

Method of manufacturing a thin film transistor

Organic light emitting display with single crystalline silicon TFT and method of fabricating the same

Semiconductor device including single crystal silicon layer

Inverter, method of manufacturing the same, and logic circuit including the inverter

Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Method of manufacturing thin film transistor

YIN HUAXIANG

Method for manufacturing multigate device

Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device

Poly-Si thin film transistor and organic light-emitting display having the same

Method of forming a microlens and a method for manufacturing an image sensor

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Dual-metal gate CMOS devices and method for manufacturing the same

Semiconductor device with gate stacks having stress and method of manufacturing the same

Semiconductor structure and method for manufacturing the same

Method of manufacturing semiconductor device

INST OF MICROELECTRONICS CAS

Device having adjustable channel stress and method thereof

Method of manufacturing stacked nanowire MOS transistor

FinFET device and method for manufacturing the same

Semiconductor device and manufacturing method therefor

Methods for manufacturing a MOSFET using a stress liner of diamond-like carbon on the substrate

Method for manufacturing semiconductor device

CMOS device with improved accuracy of threshold voltage adjustment and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Three-dimensional vertical single transistor ferroelectric memory and manufacturing method thereof

MA XIAOLONG

Method for manufacturing semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

QIN CHANGLIANG

Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing method

MOS device for making the source/drain region closer to the channel region and method of manufacturing the same

SEMICONDUCTOR MFG INT SHANGHAI

Fin field-effect transistors and fabrication method thereof

Fin field-effect transistors

JUNIPER NETWORKS INC

Flow processing migration

State synchronization for global control in a distributed security system

INST OF MICROELECTROICS CHINESE ACADEMY OF SCIENCES

Method for manufacturing semiconductor device including doping epitaxial source drain extension regions

SEMICONDUCTOR MFG INT CORP

Fin field-effect transistors and fabrication method thereof