Inventor · disambiguated record
Bomsoo Kim
Also filed as: KIM BOMSOO
3 granted patents·2 pending applications·12 citations·filing 2012–2020
63Inventor score
Top patents by PatentIndex Score
5 records- 0190US9525036B2Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recessSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 20, 2016·8 cites·15 claims
- 0280US9653551B2Field effect transistors including fin structures with different doped regions and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·4 cites·19 claims
- 0362USRE49525ESemiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recessSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 9, 2023·0 cites·20 claims
- 0438US2013249003A1Field effect transistors including fin structures with different doped regions and semiconductor devices including the sameOH CHANGWOO·Filed 2012·Application pending·0 cites
- 0530US2017053825A1Semiconductor devices having fin field effect transistors with a single liner pattern in a first region and a dual liner pattern in a second region and methods for manufacturing the sameSEO KANG-ILL·Filed 2015·Application pending·0 cites
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