Inventor
LIN MING-SHIANG
TW20 patents
Patents
20 patentsUS11387360B2Jul 12, 2022
Transistor with a negative capacitance and a method of creating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10818562B2Oct 27, 2020
Semiconductor structure and testing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10732209B2Aug 4, 2020
Semiconductor test device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10707347B2Jul 7, 2020
Transistor with a negative capacitance and a method of creating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10670641B2Jun 2, 2020
Semiconductor test device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12349493B2Jul 1, 2025
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US12408387B2Sep 2, 2025
Transistor with a negative capacitance and a method of creating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336216B2Jun 17, 2025
Ferroelectric semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243930B2Mar 4, 2025
Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942380B2Mar 26, 2024
Semiconductor structure and testing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855221B2Dec 26, 2023
Ferroelectric semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11522085B2Dec 6, 2022
Ferroelectric semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11513145B2Nov 29, 2022
Semiconductor test device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444174B2Sep 13, 2022
Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189726B2Nov 30, 2021
Transistor with a negative capacitance and a method of creating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10797174B2Oct 6, 2020
Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10505040B2Dec 10, 2019
Method of manufacturing a semiconductor device having a gate with ferroelectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10395937B2Aug 27, 2019
Fin patterning for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12376402B2Jul 29, 2025
Transparent refraction structure for an image sensor and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US11749700B2Sep 5, 2023
Transparent refraction structure for an image sensor and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50