Inventor · disambiguated record
David L. Harame
Also filed as: HARAME DAVID · HARAME DAVID L · HARAME DAVID LOUIS
87 granted patents·7 pending applications·1,076 citations·filing 1988–2019
99Inventor score
Top patents by PatentIndex Score
94 records- 0195US9245951B1Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 26, 2016·20 cites·20 claims
- 0295US6900519B2Diffused extrinsic base and method for fabricationIBM·Filed 2004·Granted May 31, 2005·95 cites·17 claims
- 0394US8546240B2Methods of manufacturing integrated semiconductor devices with single crystalline beamHARAME DAVID L·Filed 2011·Granted Oct 1, 2013·14 cites·17 claims
- 0492US8536012B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesCAMILLO-CASTILLO RENATA·Filed 2011·Granted Sep 17, 2013·13 cites·15 claims
- 0592US7262484B2Structure and method for performance improvement in vertical bipolar transistorsIBM·Filed 2005·Granted Aug 28, 2007·17 cites·10 claims
- 0691US10014397B1Bipolar junction transistors with a combined vertical-lateral architectureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·6 cites·16 claims
- 0790US4997776AComplementary bipolar transistor structure and method for manufactureIBM·Filed 1990·Granted Mar 5, 1991·132 cites·40 claims
- 0889US9240448B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2015·Granted Jan 19, 2016·5 cites·9 claims
- 0989US8796149B1Collector-up bipolar junction transistors in BiCMOS technologyIBM·Filed 2013·Granted Aug 5, 2014·8 cites·10 claims
- 1088US9608096B1Implementing stress in a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·6 cites·19 claims
- 1188US8415763B2Tunable semiconductor deviceHARAME DAVID LOUIS·Filed 2011·Granted Apr 9, 2013·13 cites·17 claims
- 1288US7253096B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2005·Granted Aug 7, 2007·11 cites·7 claims
- 1387US9570564B2Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitanceGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 14, 2017·8 cites·18 claims
- 1487US5128271AHigh performance vertical bipolar transistor structure via self-aligning processing techniquesIBM·Filed 1990·Granted Jul 7, 1992·71 cites·30 claims
- 1586US9224841B2Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a method of forming the semiconductor finsIBM·Filed 2014·Granted Dec 29, 2015·7 cites·20 claims
- 1686US9093491B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2012·Granted Jul 28, 2015·7 cites·13 claims
- 1786US6426265B1Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2001·Granted Jul 30, 2002·25 cites·23 claims
- 1886US5024957AMethod of fabricating a bipolar transistor with ultra-thin epitaxial baseIBM·Filed 1989·Granted Jun 18, 1991·52 cites·12 claims
- 1985US10431654B2Extrinsic base doping for bipolar junction transistorsIBM·Filed 2015·Granted Oct 1, 2019·3 cites·12 claims
- 2085US9721949B1Method of forming super steep retrograde wells on FinFETGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·3 cites·13 claims
- 2185US9553145B2Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thicknessGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 24, 2017·5 cites·14 claims
- 2285US8786051B2Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitanceADKISSON JAMES W·Filed 2012·Granted Jul 22, 2014·7 cites·16 claims
- 2384US9202900B2Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technologyIBM·Filed 2014·Granted Dec 1, 2015·5 cites·7 claims
- 2484US6812545B2Epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2003·Granted Nov 2, 2004·28 cites·7 claims
- 2584US5926359AMetal-insulator-metal capacitorIBM·Filed 1996·Granted Jul 20, 1999·68 cites·9 claims
- 2683US8716837B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesIBM·Filed 2013·Granted May 6, 2014·5 cites·20 claims
- 2783US8405186B2Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structureCAMILLO-CASTILLO RENATA·Filed 2010·Granted Mar 26, 2013·7 cites·17 claims
- 2882US8710500B2Bipolar junction transistor with a self-aligned emitter and baseIBM·Filed 2013·Granted Apr 29, 2014·5 cites·16 claims
- 2982US8610174B2Bipolar transistor with a raised collector pedestal for reduced capacitanceADKISSON JAMES W·Filed 2011·Granted Dec 17, 2013·6 cites·22 claims
- 3082US5101256ABipolar transistor with ultra-thin epitaxial base and method of fabricating sameIBM·Filed 1991·Granted Mar 31, 1992·53 cites·8 claims
- 3181US5352912AGraded bandgap single-crystal emitter heterojunction bipolar transistorIBM·Filed 1991·Granted Oct 4, 1994·52 cites·18 claims
- 3281US5266813AIsolation technique for silicon germanium devicesIBM·Filed 1992·Granted Nov 30, 1993·57 cites·14 claims
- 3380US8927379B2Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technologyIBM·Filed 2012·Granted Jan 6, 2015·4 cites·7 claims
- 3479US9583569B2Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 28, 2017·2 cites·20 claims
- 3579US9312370B2Bipolar transistor with extrinsic base region and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·4 cites·9 claims
- 3678US7002221B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2003·Granted Feb 21, 2006·17 cites·17 claims
- 3776US9159816B2PNP bipolar junction transistor fabrication using selective epitaxyIBM·Filed 2014·Granted Oct 13, 2015·3 cites·15 claims
- 3876US8927381B2Self-aligned bipolar junction transistorsIBM·Filed 2013·Granted Jan 6, 2015·3 cites·9 claims
- 3975US8901738B2Method of manufacturing an enhanced electromigration performance hetero-junction bipolar transistorIBM·Filed 2012·Granted Dec 2, 2014·3 cites·19 claims
- 4073US8871600B2Schottky barrier diodes with a guard ring formed by selective epitaxyHARAME DAVID L·Filed 2011·Granted Oct 28, 2014·3 cites·11 claims
- 4172US9059396B2Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structureIBM·Filed 2013·Granted Jun 16, 2015·2 cites·10 claims
- 4272US6617220B2Method for fabricating an epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2001·Granted Sep 9, 2003·15 cites·13 claims
- 4371US8513084B2Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistorHARAME DAVID L·Filed 2010·Granted Aug 20, 2013·2 cites·23 claims
- 4469US5308785AIsolation technique for silicon germanium devicesIBM·Filed 1993·Granted May 3, 1994·34 cites·16 claims
- 4568US9356097B2Method of forming a bipolar transistor with maskless self-aligned emitterIBM·Filed 2013·Granted May 31, 2016·2 cites·18 claims
- 4668US8716096B2Self-aligned emitter-base in advanced BiCMOS technologyCHAN KEVIN K·Filed 2011·Granted May 6, 2014·2 cites·13 claims
- 4767US8546230B2Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistorADKISSON JAMES W·Filed 2011·Granted Oct 1, 2013·2 cites·21 claims
- 4867US6413868B1Modular high frequency integrated circuit structureIBM·Filed 2001·Granted Jul 2, 2002·13 cites·29 claims
- 4966US7932155B2Structure and method for performance improvement in vertical bipolar transistorsIBM·Filed 2007·Granted Apr 26, 2011·2 cites·24 claims
- 5066US7898061B2Structure for performance improvement in vertical bipolar transistorsIBM·Filed 2007·Granted Mar 1, 2011·2 cites·18 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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