P

Inventor

CHEN JHIH-BIN

TW21 patents
⚠️ This page may combine multiple inventors who share the name “CHEN JHIH-BIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US11437785B2Sep 6, 2022

VCSEL with self-aligned microlens to improve beam divergence

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11329128B2May 10, 2022

High voltage device with gate extensions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12237647B2Feb 25, 2025

Techniques for vertical cavity surface emitting laser oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211896B2Jan 28, 2025

High voltage device with gate extensions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908891B2Feb 20, 2024

High voltage device with gate extensions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11784460B2Oct 10, 2023

Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11309685B2Apr 19, 2022

Techniques for vertical cavity surface emitting laser oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11211469B2Dec 28, 2021

Third generation flash memory structure with self-aligned contact and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11158593B2Oct 26, 2021

Structures for bonding a group III-V device to a substrate by stacked conductive bumps

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11025033B2Jun 1, 2021

Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10643964B2May 5, 2020

Structures for bonding a group III-V device to a substrate by stacked conductive bumps

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12255207B2Mar 18, 2025

Boundary design for high-voltage integration on HKMG technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11855091B2Dec 26, 2023

Boundary design for high-voltage integration on HKMG technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11410999B2Aug 9, 2022

Boundary design for high-voltage integration on HKMG technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12588429B2Mar 24, 2026

Resistive memory device including a silicon oxide base spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12563804B2Feb 24, 2026

Semiconductor structure and forming method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12159870B2Dec 3, 2024

Semiconductor structure and forming method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12588256B2Mar 24, 2026

Method for manufacturing semiconductor structure and semiconductor structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US10847949B2Nov 24, 2020

Techniques for vertical cavity surface emitting laser oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41

ACADEMIA SINICA

2 patents