Inventor · disambiguated record
Dragan Podlesnik
Also filed as: PODLESNIK DRAGAN · PODLESNIK DRAGAN V · PODLESNIK DRAGAN VALENTIN
31 granted patents·8 pending applications·1,692 citations·filing 1989–2013
98Inventor score
Top patents by PatentIndex Score
39 records- 0198US6642127B2Method for dicing a semiconductor waferAPPLIED MATERIALS INC·Filed 2001·Granted Nov 4, 2003·274 cites·22 claims
- 0296US6235643B1Method for etching a trench having rounded top and bottom corners in a silicon substrateAPPLIED MATERIALS INC·Filed 1999·Granted May 22, 2001·305 cites·32 claims
- 0396US5505816AEtching of silicon dioxide selectively to silicon nitride and polysiliconIBM·Filed 1993·Granted Apr 9, 1996·328 cites·15 claims
- 0492US5468955ANeutral beam apparatus for in-situ production of reactants and kinetic energy transferIBM·Filed 1994·Granted Nov 21, 1995·108 cites·20 claims
- 0591US6380095B1Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosionAPPLIED MATERIALS INC·Filed 2000·Granted Apr 30, 2002·66 cites·21 claims
- 0691US6318384B1Self cleaning method of forming deep trenches in silicon substratesAPPLIED MATERIALS INC·Filed 1999·Granted Nov 20, 2001·88 cites·35 claims
- 0791US6180533B1Method for etching a trench having rounded top corners in a silicon substrateAPPLIED MATERIALS INC·Filed 2000·Granted Jan 30, 2001·71 cites·25 claims
- 0887US6372655B2Two etchant etch methodAPPLIED MATERIALS INC·Filed 2001·Granted Apr 16, 2002·31 cites·17 claims
- 0986US6827869B2Method of micromachining a multi-part cavityFiled 2002·Granted Dec 7, 2004·43 cites·21 claims
- 1086US6696365B2Process for in-situ etching a hardmask stackAPPLIED MATERIALS INC·Filed 2002·Granted Feb 24, 2004·38 cites·5 claims
- 1183US6391788B1Two etchant etch methodAPPLIED MATERIALS INC·Filed 2000·Granted May 21, 2002·22 cites·61 claims
- 1282US6518192B2Two etchant etch methodAPPLIED MATERIALS INC·Filed 2001·Granted Feb 11, 2003·20 cites·18 claims
- 1380US6802933B2Apparatus for performing self cleaning method of forming deep trenches in silicon substratesFiled 2000·Granted Oct 12, 2004·19 cites·18 claims
- 1480US6583063B1Plasma etching of silicon using fluorinated gas mixturesAPPLIED MATERIALS INC·Filed 1999·Granted Jun 24, 2003·59 cites·18 claims
- 1580US5801386AApparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using sameAPPLIED MATERIALS INC·Filed 1996·Granted Sep 1, 1998·36 cites·25 claims
- 1678US6593244B1Process for etching conductors at high etch ratesAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·22 cites·13 claims
- 1778US6270634B1Method for plasma etching at a high etch rateAPPLIED MATERIALS INC·Filed 1999·Granted Aug 7, 2001·44 cites·24 claims
- 1873US8211846B2Materials for particle removal by single-phase and two-phase mediaMUI DAVID S L·Filed 2008·Granted Jul 3, 2012·3 cites·19 claims
- 1973US8084406B2Apparatus for particle removal by single-phase and two-phase mediaMUI DAVID S L·Filed 2008·Granted Dec 27, 2011·3 cites·11 claims
- 2072US6303513B1Method for controlling a profile of a structure formed on a substrateAPPLIED MATERIALS INC·Filed 1999·Granted Oct 16, 2001·38 cites·22 claims
- 2170US6653237B2High resist-selectivity etch for silicon trench etch applicationsAPPLIED MATERIALS INC·Filed 2001·Granted Nov 25, 2003·13 cites·23 claims
- 2270US6383941B1Method of etching organic ARCs in patterns having variable spacingsAPPLIED MATERIALS INC·Filed 2000·Granted May 7, 2002·13 cites·17 claims
- 2367US6897155B2Method for etching high-aspect-ratio featuresAPPLIED MATERIALS INC·Filed 2002·Granted May 24, 2005·11 cites·19 claims
- 2465US6471833B2High etch rate method for plasma etching silicon nitrideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 29, 2002·9 cites·29 claims
- 2556US8983631B2Arrangement for identifying uncontrolled events at the process module level and methods thereofHUANG CHUNG HO·Filed 2009·Granted Mar 17, 2015·2 cites·20 claims
- 2654US8226775B2Methods for particle removal by single-phase and two-phase mediaMUI DAVID S L·Filed 2008·Granted Jul 24, 2012·0 cites·24 claims
- 2752US8652266B2Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applicationsMIKHAYLICHENKO KATRINA·Filed 2008·Granted Feb 18, 2014·0 cites·11 claims
- 2852US2006175015A1Etch chamber with dual frequency biasing sources and a single frequency plasma generating sourceAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2951US2012132234A1Apparatus for particle removal by single-phase and two-phase mediaMUI DAVID S L·Filed 2011·Application pending·0 cites
- 3051US2014116476A1Systems for Surface Treatment of Semiconductor Substrates using Sequential Chemical ApplicationsLAM RES CORP·Filed 2013·Application pending·0 cites
- 3151US2007020937A1Etch chamber with dual frequency biasing sources and a single frequency plasma generating sourceCHEN JIN-YUAN·Filed 2006·Application pending·0 cites
- 3243US5926689AProcess for reducing circuit damage during PECVD in single wafer PECVD systemIBM·Filed 1995·Granted Jul 20, 1999·11 cites·3 claims
- 3340US8828145B2Method of particle contaminant removalSABBA YIZHAK·Filed 2009·Granted Sep 9, 2014·0 cites·10 claims
- 3440US2004025791A1Etch chamber with dual frequency biasing sources and a single frequency plasma generating sourceAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3540US2001051439A1Self cleaning method of forming deep trenches in silicon substratesAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3637US5081002AMethod of localized photohemical etching of multilayered semiconductor bodyUNIV COLUMBIA·Filed 1989·Granted Jan 14, 1992·9 cites·12 claims
- 3737US2004018741A1Method For Enhancing Critical Dimension Uniformity After EtchAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3837US2003190814A1Method of reducing micromasking during plasma etching of a silicon-comprising substrateAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3935US6808647B1Methodologies to reduce process sensitivity to the chamber conditionAPPLIED MATERIALS INC·Filed 1999·Granted Oct 26, 2004·6 cites·7 claims
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