Inventor
BAO XINYU
US71 patents
⚠️ This page may combine multiple inventors who share the name “BAO XINYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11968844B2Apr 23, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11342380B2May 24, 2022
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11349462B1May 31, 2022
Selector-based random number generator and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11842946B2Dec 12, 2023
Semiconductor package having an encapsulant comprising conductive fillers and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12575114B2Mar 10, 2026
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12514128B2Dec 30, 2025
Magnetic memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12469553B2Nov 11, 2025
Operating method, memory system, and control circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342548B2Jun 24, 2025
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324165B2Jun 3, 2025
Methods of writing and forming memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302765B2May 13, 2025
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12232331B2Feb 18, 2025
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12114512B2Oct 8, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035542B2Jul 9, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990182B2May 21, 2024
Operation methods for ovonic threshold selector, memory device and memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11944019B2Mar 26, 2024
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805662B2Oct 31, 2023
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805661B2Oct 31, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11664790B2May 30, 2023
Selector-based random number generator and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538858B2Dec 27, 2022
Memory device, method of forming the same, and memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400710B2Aug 26, 2025
Memory selector threshold voltage recovery
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12334147B2Jun 17, 2025
First fire operation for ovonic threshold switch selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12261095B2Mar 25, 2025
Semiconductor package having an encapulant comprising conductive fillers and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12014774B2Jun 18, 2024
Memory selector threshold voltage recovery
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11955173B2Apr 9, 2024
First fire operation for ovonic threshold switch selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12249369B2Mar 11, 2025
Adjusting operation voltage of cross point memory according to aging information
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11177435B2Nov 16, 2021
Cross-point memory-selector composite pillar stack structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
APPLIED MATERIALS INC
20 patentsUS9923081B1Mar 20, 2018
Selective process for source and drain formation
APPLIED MATERIALS INC23 citations94
US10204781B1Feb 12, 2019
Methods for bottom up fin structure formation
APPLIED MATERIALS INC6 citations84
US10090147B2Oct 2, 2018
Integrated system and method for source/drain engineering
APPLIED MATERIALS INC6 citations82
US10276688B2Apr 30, 2019
Selective process for source and drain formation
APPLIED MATERIALS INC2 citations73
US10236190B2Mar 19, 2019
Method for wafer outgassing control
APPLIED MATERIALS INC2 citations73
US10205002B2Feb 12, 2019
Method of epitaxial growth shape control for CMOS applications
APPLIED MATERIALS INC4 citations73
US10115607B2Oct 30, 2018
Method and apparatus for wafer outgassing control
APPLIED MATERIALS INC2 citations73
US10043667B2Aug 7, 2018
Integrated method for wafer outgassing reduction
APPLIED MATERIALS INC3 citations73
US10002759B2Jun 19, 2018
Method of forming structures with V shaped bottom on silicon substrate
APPLIED MATERIALS INC3 citations73
US9905412B2Feb 27, 2018
Method and solution for cleaning InGaAs (or III-V) substrates
APPLIED MATERIALS INC2 citations73
US9653291B2May 16, 2017
Method for removing native oxide and residue from a III-V group containing surface
APPLIED MATERIALS INC2 citations73
US10269647B2Apr 23, 2019
Self-aligned EPI contact flow
APPLIED MATERIALS INC3 citations72
US9159554B2Oct 13, 2015
Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si
APPLIED MATERIALS INC5 citations72
US11164767B2Nov 2, 2021
Integrated system for semiconductor process
APPLIED MATERIALS INC0 citations63
US10243063B2Mar 26, 2019
Method of uniform channel formation
APPLIED MATERIALS INC1 citations62
US12571101B2Mar 10, 2026
Multi-level injector with angled gas outlet for semiconductor epitaxy growth
APPLIED MATERIALS INC0 citations52
US11649559B2May 16, 2023
Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate
APPLIED MATERIALS INC0 citations52
US10741393B2Aug 11, 2020
Methods for bottom up fin structure formation
APPLIED MATERIALS INC0 citations52
US10438796B2Oct 8, 2019
Method for removing native oxide and residue from a III-V group containing surface
APPLIED MATERIALS INC0 citations52
US10256322B2Apr 9, 2019
Co-doping process for n-MOS source drain application
APPLIED MATERIALS INC0 citations52
WANG DELI
2 patentsBAO XINYU
1 patentLAM RES CORP
1 patentShowing the top 50 of 71 patents by PatentIndex Score.