Inventor
MAKI TOSHIHIRO
JP26 patents
⚠️ This page may combine multiple inventors who share the name “MAKI TOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YAZAKI CORP
13 patentsUS6976889B2Dec 20, 2005
Method and structure for connecting a terminal with a wire
YAZAKI CORP16 citations92
US6749457B2Jun 15, 2004
Crimp terminal
YAZAKI CORP39 citations92
USD316703SMay 7, 1991
Housing for an electrical connector
YAZAKI CORP39 citations91
US6626711B2Sep 30, 2003
Press-clamping terminal and method of examining press-clamped condition thereof
YAZAKI CORP19 citations84
USD316704SMay 7, 1991
Housing for an electrical connector
YAZAKI CORP21 citations80
US6893301B2May 17, 2005
Method and structure for connecting a terminal with a wire
YAZAKI CORP10 citations74
US6770817B2Aug 3, 2004
Structure for waterproofing terminal-wire connecting portion and method of waterproofing the same
YAZAKI CORP10 citations74
US6734359B2May 11, 2004
Wire connecting structure and connecting method
YAZAKI CORP12 citations74
US5634825AJun 3, 1997
Electrical terminal
YAZAKI CORP16 citations74
US6625884B1Sep 30, 2003
Method of determining a connection state of metal terminal and a wire
YAZAKI CORP8 citations73
US6113441ASep 5, 2000
Metal terminal and wire connector
YAZAKI CORP10 citations73
USD324205SFeb 25, 1992
Connector housing
YAZAKI CORP7 citations73
US6739899B2May 25, 2004
Method and structure for connecting a terminal with a wire
YAZAKI CORP3 citations63
TOSHIBA KK
12 patentsUS5418071AMay 23, 1995
Sputtering target and method of manufacturing the same
TOSHIBA KK67 citations96
US5196916AMar 23, 1993
Highly purified metal material and sputtering target using the same
TOSHIBA KK54 citations96
US6329275B1Dec 11, 2001
Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
TOSHIBA KK76 citations95
US5913100AJun 15, 1999
Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film
TOSHIBA KK40 citations95
US7153589B1Dec 26, 2006
Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film
TOSHIBA KK18 citations92
US6200694B1Mar 13, 2001
Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film
TOSHIBA KK23 citations92
US5679983AOct 21, 1997
Highly purified metal material and sputtering target using the same
TOSHIBA KK22 citations92
US5470527ANov 28, 1995
Ti-W sputtering target and method for manufacturing same
TOSHIBA KK53 citations92
US5458697AOct 17, 1995
Highly purified metal material and sputtering target using the same
TOSHIBA KK28 citations92
US6309593B1Oct 30, 2001
Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device
TOSHIBA KK15 citations82
USRE41975ENov 30, 2010
Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
TOSHIBA KK6 citations73
US6352628B2Mar 5, 2002
Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device
TOSHIBA KK8 citations72