Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same

Abstract

An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

What is claimed is: 
     
       1. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element constituting an intermetallic compound of Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 
     
     
       2. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element having a standard electrode potential higher than Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 
     
     
       3. The sputter target according to  claim 2 , wherein the sputter target has the first element which is an element constituting an intermetallic compound of Al. 
     
     
       4. A sputter target consisting essentially of 0.001 to 30 at % of at least one first element having a standard electrode potential higher than Al, 0.01 at ppm to 50 at % of H with respect to the amount of the first element, and the balance of Al. 
     
     
       5. The sputter target according to  claim 4 , wherein the sputter target contains the H in a range of 500 wt ppm or below. 
     
     
       6. A sputter target, consisting essentially of at least one first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 
     
     
       7. A thin film material consisting essentially of 0.001 to 30 at % of at least one first element selected from the group consisting of Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy and Er, at least one second element selected from the group consisting of 0.001 at ppm to 3 at % of C with respect to the amount of the first element, 0.01 at ppm to 7.5 at % of O with respect to the amount of the first element, 0.01 at ppm to 3000 at ppm of N with respect to the amount of the first element, and 0.01 at ppm to 7.5 at % of H with respect to the amount of the first element, and the balance of Al. 
     
     
       8. The thin film material according to claim 7, wherein the thin film material comprises an intermetallic compound of Al and the first element, and the intermetallic compound is precipitated finely and uniformly in the thin film material. 
     
     
       9. The thin film material according to claim 7, wherein the thin film material contains the C in the range of 3000 at ppm or below with respect to the amount of the first element. 
     
     
       10. The thin film material according to claim 7, wherein the thin film material contains the C in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       11. The thin film material according to claim 7, wherein the thin film material contains the O in the range of 1.5 at % or below with respect to the amount of the first element. 
     
     
       12. The thin film material according to claim 7, wherein the thin film material contains the O in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       13. The thin film material according to claim 7, wherein the thin film material contains the N in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       14. The thin film material according to claim 7, wherein the thin film material contains the N in the range of 910 at ppm or below with respect to the amount of the first element. 
     
     
       15. The thin film material according to claim 7, wherein the thin film material contains the N in the range of 420 at ppm or below with respect to the amount of the first element. 
     
     
       16. The thin film material according to claim 7, wherein the thin film material contains the N in the range of 150 at ppm or below with respect to the amount of the first element. 
     
     
       17. The thin film material according to claim 7, wherein the thin film material contains the N in the range of 70 at ppm or below with respect to the amount of the first element. 
     
     
       18. The thin film material according to claim 7, wherein the thin film material contains the H in the range of 1.5 at % or below with respect to the amount of the first element. 
     
     
       19. The thin film material according to claim 7, wherein the thin film material contains the H in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       20. The thin film material according to claim 7, wherein the first element contains at least one selected from the group consisting of Y, Nd and Sm. 
     
     
       21. A thin film material consisting essentially of 0.001 to 30 at % of at least one first element selected from the group consisting of Ag, Au, Cu, Ti, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Pd, Ir, Pt, Cd, Si and Pb, at least one second element selected from the group consisting of 0.01 at ppm to 3 at % of C with respect to the amount of the first element, 0.01 at ppm to 7.5 at % of O with respect to the amount of the first element, 0.01 at ppm to 3000 at ppm of N with respect to the amount of the first element, and 0.01 at ppm to 1.5 at % of H with respect to the amount of the first element, and the balance of Al, wherein the thin film material contains at least the H as the second element. 
     
     
       22. The thin film material according to claim 21, wherein the thin film material contains the H in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       23. The thin film material according to claim 21, wherein the thin film material contains the C in the range of 3000 at ppm or below with respect to the amount of the first element. 
     
     
       24. The thin film material according to claim 21, wherein the thin film material contains the C in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       25. The thin film material according to claim 21, wherein the thin film material contains the O in the range of 1.5 at % or below with respect to the amount of the first element. 
     
     
       26. The thin film material according to claim 21, wherein the thin film material contains the O in the range of 1500 at ppm or below with respect to the amount of the first element. 
     
     
       27. The thin film material according to claim 21, wherein the thin film material contains the N in the range of 1500 at ppm or below with respect to the amount of the first element.