Inventor
CHU FENG-CHING
TW47 patents
Patents
47 patentsUS10497628B2Dec 3, 2019
Methods of forming epitaxial structures in fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10217815B1Feb 26, 2019
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US12027626B2Jul 2, 2024
Semiconductor device active region profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12015060B2Jun 18, 2024
Structure and formation method of semiconductor device with backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901236B2Feb 13, 2024
Semiconductor structure with gate-all-around devices and stacked FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11631736B2Apr 18, 2023
Epitaxial source/drain feature with enlarged lower section interfacing with backside via
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11575047B2Feb 7, 2023
Semiconductor device active region profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11508736B2Nov 22, 2022
Method for forming different types of devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11088245B2Aug 10, 2021
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867861B2Dec 15, 2020
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10756171B2Aug 25, 2020
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10522680B2Dec 31, 2019
Finfet semiconductor device structure with capped source drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10403551B2Sep 3, 2019
Source/drain features with an etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12501601B2Dec 16, 2025
Method for forming different types of devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12324201B2Jun 3, 2025
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12107165B2Oct 1, 2024
Semiconductor device structure with cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12068204B2Aug 20, 2024
Methods of forming epitaxial structures in fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11917803B2Feb 27, 2024
Method for forming different types of devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11908748B2Feb 20, 2024
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11894421B2Feb 6, 2024
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854688B2Dec 26, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11810825B2Nov 7, 2023
Methods of forming epitaxial structures in fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11769820B2Sep 26, 2023
Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11569386B2Jan 31, 2023
Method for forming semiconductor device structure with cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11502005B2Nov 15, 2022
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11217490B2Jan 4, 2022
Source/drain features with an etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11107735B2Aug 31, 2021
Methods of forming epitaxial structures in fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12471306B2Nov 11, 2025
Semiconductor device active region profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12432990B2Sep 30, 2025
Epitaxial source/drain feature with enlarged lower section interfacing with backside via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408377B2Sep 2, 2025
Semiconductor device structure with backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408347B2Sep 2, 2025
Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369383B2Jul 22, 2025
Semiconductor structure with gate-all-around devices and stacked FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356662B2Jul 8, 2025
Asymmetric source/drain for backside source contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272729B2Apr 8, 2025
Asymmetric source/drain for backside source contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12245432B2Mar 4, 2025
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211749B2Jan 28, 2025
Cut EPI process and structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11937426B2Mar 19, 2024
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11515211B2Nov 29, 2022
Cut EPI process and structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11328960B2May 10, 2022
Semiconductor structure with gate-all-around devices and stacked FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408363B2Sep 2, 2025
Semiconductor device with phosphorus-doped epitaxial features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11862712B2Jan 2, 2024
Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12588283B2Mar 24, 2026
Semiconductor structure and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879395B2Dec 29, 2020
Method for forming semiconductor device structure with cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10748820B2Aug 18, 2020
Source/drain features with an etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522420B2Dec 31, 2019
Source/drain features with an etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10991630B2Apr 27, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12279451B2Apr 15, 2025
Semiconductor device including source/drain feature with multiple epitaxial layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49