Inventor
MAKIYAMA HIDEKI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “MAKIYAMA HIDEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
32 patentsUS9196705B2Nov 24, 2015
Method of manufacturing a misfet on an SOI substrate
RENESAS ELECTRONICS CORP10 citations92
US8941178B2Jan 27, 2015
MOS field-effect transistor formed on the SOI substrate
RENESAS ELECTRONICS CORP9 citations92
US9484433B2Nov 1, 2016
Method of manufacturing a MISFET on an SOI substrate
RENESAS ELECTRONICS CORP5 citations84
US9201440B2Dec 1, 2015
Semiconductor integrated circuit device
RENESAS ELECTRONICS CORP7 citations84
US11562897B1Jan 24, 2023
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP2 citations73
US10461158B2Oct 29, 2019
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP1 citations73
US10263012B2Apr 16, 2019
Semiconductor integrated circuit device comprising MISFETs in SOI and bulk substrate regions
RENESAS ELECTRONICS CORP1 citations73
US9960183B2May 1, 2018
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP3 citations73
US9887301B2Feb 6, 2018
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP4 citations73
US9343527B2May 17, 2016
Semiconductor device including an isolation film buried in a groove
RENESAS ELECTRONICS CORP3 citations73
US9130039B2Sep 8, 2015
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP5 citations73
US9024386B2May 5, 2015
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP3 citations63
US8975699B2Mar 10, 2015
Semiconductor device
RENESAS ELECTRONICS CORP3 citations63
US8872267B2Oct 28, 2014
Semiconductor device
RENESAS ELECTRONICS CORP2 citations63
US12261205B2Mar 25, 2025
Semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US11996448B2May 28, 2024
Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layer
RENESAS ELECTRONICS CORP0 citations62
US11658211B2May 23, 2023
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations62
US10446401B2Oct 15, 2019
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP1 citations62
US10366914B2Jul 30, 2019
Method of manufacturing semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP1 citations62
US10297613B2May 21, 2019
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US10263078B2Apr 16, 2019
Method of manufacturing a MISFET on an SOI substrate
RENESAS ELECTRONICS CORP0 citations52
US10056406B2Aug 21, 2018
Semiconductor integrated circuit device comprising MISFETs in SOI and bulk subtrate regions
RENESAS ELECTRONICS CORP0 citations52
US10014385B2Jul 3, 2018
Manufacturing method of semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9978839B2May 22, 2018
Method of manufacturing a MOSFET on an SOI substrate
RENESAS ELECTRONICS CORP0 citations52
US9806165B2Oct 31, 2017
Manufacturing method of semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9773872B2Sep 26, 2017
Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance
RENESAS ELECTRONICS CORP0 citations52
US9484456B2Nov 1, 2016
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US9484271B2Nov 1, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP1 citations52
US9460936B2Oct 4, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US9142567B2Sep 22, 2015
SOI SRAM having well regions with opposite conductivity
RENESAS ELECTRONICS CORP0 citations52
US9455273B2Sep 27, 2016
Semiconductor device
RENESAS ELECTRONICS CORP0 citations42
US10325899B2Jun 18, 2019
Semiconductor device including transistors formed in regions of semiconductor substrate and operation method of the same
RENESAS ELECTRONICS CORP0 citations40