Inventor · disambiguated record
Evelyn L. Hu
Also filed as: HU EVELYN · HU EVELYN L · HU EVELYN LYNN
18 granted patents·9 pending applications·925 citations·filing 1978–2023
95Inventor score
Top patents by PatentIndex Score
27 records- 0198US7704763B2Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surfaceUNIV CALIFORNIA·Filed 2003·Granted Apr 27, 2010·170 cites·14 claims
- 0298US4145699ASuperconducting junctions utilizing a binary semiconductor barrierBELL TELEPHONE LABOR INC·Filed 1978·Granted Mar 20, 1979·559 cites·11 claims
- 0388US7960721B2Light emitting devices made by bio-fabricationSILURIA TECHNOLOGIES INC·Filed 2008·Granted Jun 14, 2011·9 cites·46 claims
- 0481US2023275185A1Highly efficient gallium nitride based light emitting diodes via surface rougheningUNIV CALIFORNIA·Filed 2023·Application pending·0 cites
- 0580US7550395B2Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyteUNIV CALIFORNIA·Filed 2005·Granted Jun 23, 2009·9 cites·8 claims
- 0679US5773369APhotoelectrochemical wet etching of group III nitridesUNIV CALIFORNIA·Filed 1996·Granted Jun 30, 1998·60 cites·11 claims
- 0778US6884740B2Photoelectrochemical undercut etching of semiconductor materialUNIV CALIFORNIA·Filed 2002·Granted Apr 26, 2005·26 cites·15 claims
- 0877US4370359AFabrication technique for junction devicesBELL TELEPHONE LABOR INC·Filed 1980·Granted Jan 25, 1983·28 cites·11 claims
- 0976US10446714B2Highly efficient gallium nitride based light emitting diodes via surface rougheningFUJII TETSUO·Filed 2014·Granted Oct 15, 2019·2 cites·12 claims
- 1075US11677044B2Highly efficient gallium nitride based light emitting diodes via surface rougheningUNIV CALIFORNIA·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 1173US8865347B2Digital alloys and methods for forming the sameHU EVELYN·Filed 2007·Granted Oct 21, 2014·6 cites·7 claims
- 1271US4352870AHigh resolution two-layer resistsBELL TELEPHONE LABOR INC·Filed 1981·Granted Oct 5, 1982·21 cites·9 claims
- 1370US8053264B2Photoelectrochemical etching of P-type semiconductor heterostructuresUNIV CALIFORNIA·Filed 2009·Granted Nov 8, 2011·3 cites·17 claims
- 1469US8569085B2Photoelectrochemical etching for chip shaping of light emitting diodesTAMBOLI ADELE·Filed 2009·Granted Oct 29, 2013·4 cites·18 claims
- 1569US8263500B2Photoelectrochemical etching for laser facetsTAMBOLI ADELE C·Filed 2010·Granted Sep 11, 2012·3 cites·22 claims
- 1666US10985293B2Highly efficient gallium nitride based light emitting diodes via surface rougheningUNIV CALIFORNIA·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 1765US4326911AReactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAsBELL TELEPHONE LABOR INC·Filed 1980·Granted Apr 27, 1982·25 cites·11 claims
- 1856US8766296B2Highly efficient gallium nitride based light emitting diodes via surface rougheningFUJII TETSUO·Filed 2009·Granted Jul 1, 2014·0 cites·33 claims
- 1950US2012018758A1Optoelectronic devices with embedded void structuresMATIOLI ELISON DE NAZARETH·Filed 2011·Application pending·0 cites
- 2048US2009315055A1PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GaN-BASED LIGHT EMITTING DIODESUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 2144US2015329604A1Pigment structures, pigment granules, pigment proteins, and uses thereofHARVARD COLLEGE·Filed 2013·Application pending·0 cites
- 2243US2008182420A1Ion beam treatment for the structural integrity of air-gap iii-nitride devices produced by the photoelectrochemical (pec) etchingUNIV CALIFORNIA·Filed 2007·Application pending·0 cites
- 2342US10211428B2Metal-based optical device enabling efficient light generation from emitters on a high-index absorbing substrateHARVARD COLLEGE·Filed 2015·Granted Feb 19, 2019·0 cites·12 claims
- 2442US2012018853A1Photoelectrochemical etching of p-type semiconductor heterostructuresTAMBOLI ADELE·Filed 2011·Application pending·0 cites
- 2539US2015158911A1Pigment structures, pigment granules, pigment proteins, and uses thereofPARKER KEVIN KIT·Filed 2012·Application pending·0 cites
- 2639US2013099277A1SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURESUNIV CALIFORNIA·Filed 2012·Application pending·0 cites
- 2733US2006052947A1Biofabrication of transistors including field effect transistorsHU EVELYN·Filed 2005·Application pending·0 cites
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