P

Inventor

CHOI YOUNG-DON

KR69 patents
⚠️ This page may combine multiple inventors who share the name “CHOI YOUNG-DON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

36 patents
US8378500B2Feb 19, 2013

Stacked semiconductor device including a serial path

SAMSUNG ELECTRONICS CO LTD23 citations93
US7816776B2Oct 19, 2010

Stacked semiconductor device and method of forming serial path thereof

SAMSUNG ELECTRONICS CO LTD26 citations93
US11342038B2May 24, 2022

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD4 citations84
US11024400B2Jun 1, 2021

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD6 citations84
US10679717B2Jun 9, 2020

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD6 citations84
US10559373B2Feb 11, 2020

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD9 citations84
US10340022B2Jul 2, 2019

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD8 citations84
US10482935B2Nov 19, 2019

Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD11 citations83
US10291275B2May 14, 2019

Reception interface circuits supporting multiple communication standards and memory systems including the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US11742040B2Aug 29, 2023

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD1 citations73
US6483364B2Nov 19, 2002

Ladder type clock network for reducing skew of clock signals

SAMSUNG ELECTRONICS CO LTD11 citations73
US12057194B2Aug 6, 2024

Memory device, operating method of the memory device and memory system comprising the memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11600539B2Mar 7, 2023

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

SAMSUNG ELECTRONICS CO LTD2 citations72
US11062966B2Jul 13, 2021

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

SAMSUNG ELECTRONICS CO LTD2 citations72
US10937474B2Mar 2, 2021

Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD2 citations72
US10937471B2Mar 2, 2021

Non-volatile memory device and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10741225B2Aug 11, 2020

Non-volatile memory device and storage device including the same

SAMSUNG ELECTRONICS CO LTD1 citations71
US10600454B2Mar 24, 2020

Non-volatile memory device and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US9058874B2Jun 16, 2015

Sensing circuits and phase change memory devices including the same

SAMSUNG ELECTRONICS CO LTD5 citations71
US8042015B2Oct 18, 2011

High-speed semiconductor memory test device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7928785B2Apr 19, 2011

Loop filter, phase-locked loop, and method of operating the loop filter

SAMSUNG ELECTRONICS CO LTD3 citations63
US7768849B2Aug 3, 2010

Semiconductor memory device capable of optimizing signal transmission power and power initializing method thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US7760838B2Jul 20, 2010

Deskewing method and apparatus, and data reception apparatus using the deskewing method and apparatus

SAMSUNG ELECTRONICS CO LTD2 citations63
US7737540B2Jun 15, 2010

Stacked semiconductor devices and signal distribution methods thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US7551514B2Jun 23, 2009

Semiconductor memory utilizing a method of coding data

SAMSUNG ELECTRONICS CO LTD3 citations63
US12340867B2Jun 24, 2025

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US12073898B2Aug 27, 2024

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11705166B2Jul 18, 2023

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US11461176B2Oct 4, 2022

Memory device and memory system

SAMSUNG ELECTRONICS CO LTD1 citations62
USRE49206ESep 6, 2022

Nonvolatile memory device, memory system including the same and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11257531B2Feb 22, 2022

Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US10964360B2Mar 30, 2021

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US11682436B2Jun 20, 2023

Memory device, operating method of the memory device and memory system comprising the memory device

SAMSUNG ELECTRONICS CO LTD1 citations61
US8760942B2Jun 24, 2014

Resistive memory device capable of blocking a current flowing through a memory cell for fast quenching

SAMSUNG ELECTRONICS CO LTD2 citations60
US10916315B2Feb 9, 2021

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations59
US10672436B2Jun 2, 2020

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations52

CHOI YOUNG-DON

4 patents

SAMSUNG ELECTRO MECH

3 patents

PARK KI-TAE

2 patents

KANG DAE WOON

1 patent

OH YOUNG-HOON

1 patent

CHOI YOUNG DON

1 patent

KIM YE-YONG

1 patent

HYUNDAI MOTOR CO LTD

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.