Inventor
KESHTBOD PARVIZ
US96 patents
⚠️ This page may combine multiple inventors who share the name “KESHTBOD PARVIZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AVALANCHE TECHNOLOGY INC
18 patentsUS8792269B1Jul 29, 2014
Fast programming of magnetic random access memory (MRAM)
AVALANCHE TECHNOLOGY INC61 citations98
US10395710B1Aug 27, 2019
Magnetic memory emulating dynamic random access memory (DRAM)
AVALANCHE TECHNOLOGY INC24 citations93
US8018011B2Sep 13, 2011
Low cost multi-state magnetic memory
AVALANCHE TECHNOLOGY INC39 citations93
US7869266B2Jan 11, 2011
Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
AVALANCHE TECHNOLOGY INC28 citations93
US8975088B2Mar 10, 2015
MRAM etching processes
AVALANCHE TECHNOLOGY INC22 citations92
US8724380B1May 13, 2014
Method for reading and writing multi-level cells
AVALANCHE TECHNOLOGY INC22 citations92
US9728240B2Aug 8, 2017
Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)
AVALANCHE TECHNOLOGY INC8 citations84
US9349941B2May 24, 2016
STTMRAM element having multiple perpendicular MTJs coupled in series
AVALANCHE TECHNOLOGY INC5 citations84
US9218866B2Dec 22, 2015
High capaciy low cost multi-state magnetic memory
AVALANCHE TECHNOLOGY INC4 citations84
US8980649B2Mar 17, 2015
Method for manufacturing non-volatile magnetic memory cell in two facilities
AVALANCHE TECHNOLOGY INC8 citations84
US8917543B2Dec 23, 2014
Multi-state spin-torque transfer magnetic random access memory
AVALANCHE TECHNOLOGY INC7 citations84
US8711613B2Apr 29, 2014
Non-volatile flash-RAM memory with magnetic memory
AVALANCHE TECHNOLOGY INC5 citations84
US8693240B1Apr 8, 2014
Method and apparatus for reading a magnetic tunnel junction using a sequence of short pulses
AVALANCHE TECHNOLOGY INC7 citations84
US8363457B2Jan 29, 2013
Magnetic memory sensing circuit
AVALANCHE TECHNOLOGY INC15 citations84
US9081669B2Jul 14, 2015
Hybrid non-volatile memory device
AVALANCHE TECHNOLOGY INC17 citations83
US9858977B1Jan 2, 2018
Programming of magnetic random access memory (MRAM) by boosting gate voltage
AVALANCHE TECHNOLOGY INC3 citations73
US9786344B1Oct 10, 2017
Programming of magnetic random access memory (MRAM) by boosting gate voltage
AVALANCHE TECHNOLOGY INC3 citations73
US9691464B2Jun 27, 2017
Fast programming of magnetic random access memory (MRAM)
AVALANCHE TECHNOLOGY INC3 citations73
RANJAN RAJIV YADAV
14 patentsUS8535952B2Sep 17, 2013
Method for manufacturing non-volatile magnetic memory
RANJAN RAJIV YADAV124 citations99
US8477530B2Jul 2, 2013
Non-uniform switching based non-volatile magnetic based memory
RANJAN RAJIV YADAV40 citations98
US8120949B2Feb 21, 2012
Low-cost non-volatile flash-RAM memory
RANJAN RAJIV YADAV79 citations98
US8063459B2Nov 22, 2011
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV25 citations96
US8508984B2Aug 13, 2013
Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
RANJAN RAJIV YADAV39 citations94
US8498150B2Jul 30, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV9 citations93
US8493777B2Jul 23, 2013
Non-volatile perpendicular magnetic memory with low switching current and high thermal stability
RANJAN RAJIV YADAV13 citations93
US8183652B2May 22, 2012
Non-volatile magnetic memory with low switching current and high thermal stability
RANJAN RAJIV YADAV33 citations93
US8084835B2Dec 27, 2011
Non-uniform switching based non-volatile magnetic based memory
RANJAN RAJIV YADAV30 citations93
US8058696B2Nov 15, 2011
High capacity low cost multi-state magnetic memory
RANJAN RAJIV YADAV25 citations93
US8440471B2May 14, 2013
Low-cost non-volatile flash-RAM memory
RANJAN RAJIV YADAV11 citations84
US8330240B2Dec 11, 2012
Low cost multi-state magnetic memory
RANJAN RAJIV YADAV8 citations84
US8498149B2Jul 30, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV3 citations74
US8493780B2Jul 23, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV3 citations74
LEXAR MEDIA INC
4 patentsUS6587382B1Jul 1, 2003
Nonvolatile memory using flexible erasing methods and method and system for using same
LEXAR MEDIA INC87 citations98
US6411546B1Jun 25, 2002
Nonvolatile memory using flexible erasing methods and method and system for using same
LEXAR MEDIA INC110 citations98
US6084483AJul 4, 2000
Internal oscillator circuit including a ring oscillator controlled by a voltage regulator circuit
LEXAR MEDIA INC118 citations98
US6018265AJan 25, 2000
Internal CMOS reference generator and voltage regulator
LEXAR MEDIA INC112 citations98
SATOH KIMIHIRO
3 patentsCIRRUS LOGIC INC
3 patentsKESHTBOD PARVIZ
2 patentsUS8542524B2Sep 24, 2013
Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
KESHTBOD PARVIZ43 citations97
US9047968B2Jun 2, 2015
High capacity low cost multi-state magnetic memory
KESHTBOD PARVIZ4 citations83
SIGNETICS CORP
2 patentsLEXAR MICROSYSTEMS INC
1 patentMALMHALL ROGER KLAS
1 patentLEXA MEDIA INC
1 patent(unassigned)
1 patentShowing the top 50 of 96 patents by PatentIndex Score.