Inventor
MACHIDA NOBUO
JP38 patents
⚠️ This page may combine multiple inventors who share the name “MACHIDA NOBUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
16 patentsUS8642401B2Feb 4, 2014
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP2 citations74
US11489047B2Nov 1, 2022
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP1 citations63
US8377775B2Feb 19, 2013
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP1 citations63
US7910990B2Mar 22, 2011
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP1 citations63
US7843001B2Nov 30, 2010
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP1 citations63
US11276784B2Mar 15, 2022
Semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US10896980B2Jan 19, 2021
Semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US8704291B2Apr 22, 2014
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP3 citations62
US8378413B2Feb 19, 2013
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP3 citations62
US7910985B2Mar 22, 2011
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP3 citations62
US9793342B2Oct 17, 2017
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US9614055B2Apr 4, 2017
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US9246000B2Jan 26, 2016
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US8987810B2Mar 24, 2015
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US9543395B2Jan 10, 2017
Normally-off power JFET and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9041049B2May 26, 2015
Power JFET
RENESAS ELECTRONICS CORP0 citations51
RENESAS TECH CORP
7 patentsUS7361557B2Apr 22, 2008
Insulated gate type semiconductor device and method for fabricating the same
RENESAS TECH CORP26 citations96
US6861703B2Mar 1, 2005
Semiconductor device and method for fabricating the same
RENESAS TECH CORP19 citations92
US6858896B2Feb 22, 2005
Insulated gate type semiconductor device and method for fabricating the same
RENESAS TECH CORP19 citations92
US7151035B2Dec 19, 2006
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP11 citations82
US7585732B2Sep 8, 2009
Insulated gate type semiconductor device and method for fabricating the same
RENESAS TECH CORP1 citations63
US7358141B2Apr 15, 2008
Semiconductor device and method for fabricating the same
RENESAS TECH CORP2 citations62
US6818949B2Nov 16, 2004
Semiconductor device and method for fabricating the same
RENESAS TECH CORP0 citations52
HITACHI LTD
3 patentsUS6638850B1Oct 28, 2003
Method of fabricating a semiconductor device having a trench-gate structure
HITACHI LTD56 citations96
US6455378B1Sep 24, 2002
Method of manufacturing a trench gate power transistor with a thick bottom insulator
HITACHI LTD70 citations96
US6706604B2Mar 16, 2004
Method of manufacturing a trench MOS gate device
HITACHI LTD18 citations92
INAGAWA HIROSHI
3 patentsUS8278708B2Oct 2, 2012
Insulated gate type semiconductor device and method for fabricating the same
INAGAWA HIROSHI2 citations73
US8148224B2Apr 3, 2012
Insulated gate type semiconductor device and method for fabricating the same
INAGAWA HIROSHI2 citations73
US8168498B2May 1, 2012
Insulated gate type semiconductor device and method for fabricating the same
INAGAWA HIROSHI1 citations62