P

Inventor

HUANG SHIH-HAN

TW22 patents
⚠️ This page may combine multiple inventors who share the name “HUANG SHIH-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

17 patents
US10727205B2Jul 28, 2020

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9653295B1May 16, 2017

Method of manufacturing a static random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12315843B2May 27, 2025

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11410972B2Aug 9, 2022

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11322481B2May 3, 2022

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504784B2Dec 10, 2019

Inductor structure for integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12218166B2Feb 4, 2025

CSI with controllable isolation structure and methods of manufacturing and using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062679B2Aug 13, 2024

Backside structure for image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11792969B2Oct 17, 2023

Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545495B2Jan 3, 2023

Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12550469B2Feb 10, 2026

Semiconductor device having isolation structures in pixel region and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804155B2Oct 13, 2020

Inductor structure for integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790194B2Sep 29, 2020

Inductor structure for integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714488B2Jul 14, 2020

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535668B1Jan 14, 2020

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10453852B2Oct 22, 2019

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10411020B2Sep 10, 2019

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

DELTA ELECTRONICS INC

3 patents

UNIV NAT TAIWAN

1 patent

VOLUTROL INC

1 patent