Inventor
HUANG SHIH-HAN
TW22 patents
⚠️ This page may combine multiple inventors who share the name “HUANG SHIH-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
17 patentsUS10727205B2Jul 28, 2020
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9653295B1May 16, 2017
Method of manufacturing a static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12315843B2May 27, 2025
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11410972B2Aug 9, 2022
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11322481B2May 3, 2022
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504784B2Dec 10, 2019
Inductor structure for integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12218166B2Feb 4, 2025
CSI with controllable isolation structure and methods of manufacturing and using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062679B2Aug 13, 2024
Backside structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11792969B2Oct 17, 2023
Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545495B2Jan 3, 2023
Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12550469B2Feb 10, 2026
Semiconductor device having isolation structures in pixel region and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804155B2Oct 13, 2020
Inductor structure for integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790194B2Sep 29, 2020
Inductor structure for integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714488B2Jul 14, 2020
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535668B1Jan 14, 2020
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10453852B2Oct 22, 2019
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10411020B2Sep 10, 2019
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51