P

Inventor

HSIEH CHIH-HUNG

TW44 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHIH-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

30 patents
US9601567B1Mar 21, 2017

Multiple Fin FET structures having an insulating separation plug

TAIWAN SEMICONDUCTOR MFG CO LTD58 citations98
US10157746B2Dec 18, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations92
US10629490B2Apr 21, 2020

Fin-type field-effect transistor device and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9653295B1May 16, 2017

Method of manufacturing a static random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12490509B2Dec 2, 2025

Method of manufacturing semiconductor devices and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US11195760B2Dec 7, 2021

Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11164746B2Nov 2, 2021

Method of manufacturing semiconductor devices and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11075082B2Jul 27, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10685969B2Jun 16, 2020

Read-only memory (ROM) device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10050043B2Aug 14, 2018

Static random access memory (SRAM) using FinFETs with varying widths of fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941290B2Apr 10, 2018

Read-only memory (ROM) device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10818675B2Oct 27, 2020

SRAM structure and method for manufacturing SRAM structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10411022B1Sep 10, 2019

SRAM structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12476113B2Nov 18, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324224B2Jun 3, 2025

Method of fabricating Fin-type field-effect transistor device having substrate with heavy doped and light doped regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908864B2Feb 20, 2024

Method of manufacturing semiconductor devices and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11792969B2Oct 17, 2023

Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721589B2Aug 8, 2023

Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545495B2Jan 3, 2023

Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10177158B1Jan 8, 2019

Method of manufacturing a static random access memory (SRAM) using FinFETs with varying widths of fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12394663B2Aug 19, 2025

Isolation with multi-step structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11728206B2Aug 15, 2023

Isolation with multi-step structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11276696B2Mar 15, 2022

SRAM structure and method for manufacturing SRAM structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11251069B2Feb 15, 2022

Method for forming isolation with multi-step structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520574B2Jan 6, 2026

Semiconductor device structure including forksheet transistors and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10790184B2Sep 29, 2020

Isolation with multi-step structure for FinFET device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10714488B2Jul 14, 2020

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535668B1Jan 14, 2020

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10453852B2Oct 22, 2019

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10411020B2Sep 10, 2019

Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

INST INFORMATION IND

3 patents

LIAW JHON JHY

2 patents

(unassigned)

1 patent

HSIEH CHIH-HUNG

1 patent

GOOGLE INC

1 patent

TAIWAN SEMICONDUCTOR MFG COMPANY LTD

1 patent

TEH YOR CO LTD

1 patent

IND TECH RES INST

1 patent

KING YUAN ELECTRONICS CO LTD

1 patent

LIN YUAN-CHI

1 patent

AMTRAN TECHNOLOGY CO LTD

1 patent