Inventor
HSIEH CHIH-HUNG
TW44 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHIH-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS9601567B1Mar 21, 2017
Multiple Fin FET structures having an insulating separation plug
TAIWAN SEMICONDUCTOR MFG CO LTD58 citations98
US10157746B2Dec 18, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations92
US10629490B2Apr 21, 2020
Fin-type field-effect transistor device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9653295B1May 16, 2017
Method of manufacturing a static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12490509B2Dec 2, 2025
Method of manufacturing semiconductor devices and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US11195760B2Dec 7, 2021
Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11164746B2Nov 2, 2021
Method of manufacturing semiconductor devices and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11075082B2Jul 27, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10685969B2Jun 16, 2020
Read-only memory (ROM) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10050043B2Aug 14, 2018
Static random access memory (SRAM) using FinFETs with varying widths of fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941290B2Apr 10, 2018
Read-only memory (ROM) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10818675B2Oct 27, 2020
SRAM structure and method for manufacturing SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10411022B1Sep 10, 2019
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12476113B2Nov 18, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324224B2Jun 3, 2025
Method of fabricating Fin-type field-effect transistor device having substrate with heavy doped and light doped regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908864B2Feb 20, 2024
Method of manufacturing semiconductor devices and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11792969B2Oct 17, 2023
Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721589B2Aug 8, 2023
Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545495B2Jan 3, 2023
Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10177158B1Jan 8, 2019
Method of manufacturing a static random access memory (SRAM) using FinFETs with varying widths of fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12394663B2Aug 19, 2025
Isolation with multi-step structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11728206B2Aug 15, 2023
Isolation with multi-step structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11276696B2Mar 15, 2022
SRAM structure and method for manufacturing SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11251069B2Feb 15, 2022
Method for forming isolation with multi-step structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520574B2Jan 6, 2026
Semiconductor device structure including forksheet transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10790184B2Sep 29, 2020
Isolation with multi-step structure for FinFET device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10714488B2Jul 14, 2020
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535668B1Jan 14, 2020
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10453852B2Oct 22, 2019
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10411020B2Sep 10, 2019
Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
INST INFORMATION IND
3 patentsUS10586044B2Mar 10, 2020
Abnormal behavior detection model building apparatus and abnormal behavior detection model building method thereof
INST INFORMATION IND0 citations39
US10742668B2Aug 11, 2020
Network attack pattern determination apparatus, determination method, and non-transitory computer readable storage medium thereof
INST INFORMATION IND0 citations36
US10250626B2Apr 2, 2019
Attacking node detection apparatus, method, and non-transitory computer readable storage medium thereof
INST INFORMATION IND0 citations36