Inventor · disambiguated record
Ronald G. Filippi
Also filed as: FILIPPI JR RONALD G · FILIPPI JR RONALD GENE · FILIPPI RONALD · FILIPPI RONALD G
114 granted patents·6 pending applications·1,312 citations·filing 1997–2019
99Inventor score
Top patents by PatentIndex Score
120 records- 0199US9502350B1Interconnect scaling method including forming dielectric layer over subtractively etched first conductive layer and forming second conductive material on dielectric layerIBM·Filed 2016·Granted Nov 22, 2016·49 cites·14 claims
- 0299US7397260B2Structure and method for monitoring stress-induced degradation of conductive interconnectsIBM·Filed 2005·Granted Jul 8, 2008·169 cites·12 claims
- 0398US9601426B1Interconnect structure having subtractive etch feature and damascene featureIBM·Filed 2016·Granted Mar 21, 2017·26 cites·5 claims
- 0497US6383920B1Process of enclosing via for improved reliability in dual damascene interconnectsIBM·Filed 2001·Granted May 7, 2002·179 cites·27 claims
- 0596US8304863B2Electromigration immune through-substrate viasFILIPPI RONALD G·Filed 2010·Granted Nov 6, 2012·38 cites·8 claims
- 0695US10256186B2Interconnect structure having subtractive etch feature and damascene featureIBM·Filed 2017·Granted Apr 9, 2019·9 cites·16 claims
- 0795US10177031B2Subtractive etch interconnectsIBM·Filed 2014·Granted Jan 8, 2019·22 cites·10 claims
- 0894US9171801B2E-fuse with hybrid metallizationIBM·Filed 2014·Granted Oct 27, 2015·19 cites·16 claims
- 0994US8633707B2Stacked via structure for metal fuse applicationsFILIPPI RONALD G·Filed 2011·Granted Jan 21, 2014·15 cites·17 claims
- 1093US9852980B2Interconnect structure having substractive etch feature and damascene featureIBM·Filed 2017·Granted Dec 26, 2017·7 cites·20 claims
- 1193US9768065B1Interconnect structures with variable dopant levelsGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 19, 2017·10 cites·13 claims
- 1293US9685404B2Back-end electrically programmable fuseBAO JUNJING·Filed 2012·Granted Jun 20, 2017·14 cites·11 claims
- 1393US8232646B2Interconnect structure for integrated circuits having enhanced electromigration resistanceBONILLA GRISELDA·Filed 2010·Granted Jul 31, 2012·17 cites·15 claims
- 1492US9536830B2High performance refractory metal / copper interconnects to eliminate electromigrationIBM·Filed 2013·Granted Jan 3, 2017·14 cites·12 claims
- 1592US8299567B2Structure of metal e-fuseWANG PING-CHUAN·Filed 2010·Granted Oct 30, 2012·17 cites·16 claims
- 1691US9431292B1Alternate dual damascene method for forming interconnectsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 30, 2016·8 cites·20 claims
- 1791US9059170B2Electronic fuse having a damaged regionIBM·Filed 2013·Granted Jun 16, 2015·12 cites·24 claims
- 1891US8056039B2Interconnect structure for integrated circuits having improved electromigration characteristicsIBM·Filed 2008·Granted Nov 8, 2011·23 cites·17 claims
- 1989US6417572B1Process for producing metal interconnections and product produced therebyIBM·Filed 1999·Granted Jul 9, 2002·105 cites·21 claims
- 2088US9305879B2E-fuse with hybrid metallizationIBM·Filed 2013·Granted Apr 5, 2016·9 cites·19 claims
- 2188US9293412B2Graphene and metal interconnects with reduced contact resistanceIBM·Filed 2014·Granted Mar 22, 2016·9 cites·18 claims
- 2288US8916461B2Electronic fuse vias in interconnect structuresIBM·Filed 2012·Granted Dec 23, 2014·8 cites·9 claims
- 2388US8736020B2Electronic anti-fuseBAO JUNJING·Filed 2012·Granted May 27, 2014·10 cites·18 claims
- 2488US8349723B2Structure of power grid for semiconductor devices and method of making the sameIBM·Filed 2012·Granted Jan 8, 2013·8 cites·19 claims
- 2587US9455186B2Selective local metal cap layer formation for improved electromigration behaviorIBM·Filed 2015·Granted Sep 27, 2016·4 cites·1 claims
- 2687US9142506B2E-fuse structures and methods of manufactureIBM·Filed 2013·Granted Sep 22, 2015·7 cites·11 claims
- 2787US6603321B2Method and apparatus for accelerated determination of electromigration characteristics of semiconductor wiringIBM·Filed 2001·Granted Aug 5, 2003·49 cites·26 claims
- 2885US9202743B2Graphene and metal interconnectsIBM·Filed 2012·Granted Dec 1, 2015·7 cites·18 claims
- 2985US8962467B2Metal fuse structure for improved programming capabilityBONILLA GRISELDA·Filed 2012·Granted Feb 24, 2015·6 cites·9 claims
- 3084US8164190B2Structure of power grid for semiconductor devices and method of making the sameFILIPPI RONALD·Filed 2009·Granted Apr 24, 2012·11 cites·14 claims
- 3184US7737528B2Structure and method of forming electrically blown metal fuses for integrated circuitsIBM·Filed 2008·Granted Jun 15, 2010·12 cites·20 claims
- 3284US6202191B1Electromigration resistant power distribution networkIBM·Filed 1999·Granted Mar 13, 2001·83 cites·46 claims
- 3383US8889491B2Method of forming electronic fuse line with modified capIBM·Filed 2013·Granted Nov 18, 2014·5 cites·8 claims
- 3483US7683644B2Extrusion failure monitor structuresIBM·Filed 2007·Granted Mar 23, 2010·8 cites·20 claims
- 3582US9105637B2Anti-fuse structure and fabricationFILIPPI RONALD G·Filed 2012·Granted Aug 11, 2015·6 cites·10 claims
- 3682US8420537B2Stress locking layer for reliable metallizationCHANDA KAUSHIK·Filed 2008·Granted Apr 16, 2013·11 cites·11 claims
- 3782US7560375B2Gas dielectric structure forming methodsIBM·Filed 2004·Granted Jul 14, 2009·34 cites·12 claims
- 3881US10770407B2IC structure with interdigitated conductive elements between metal guard structuresGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 8, 2020·3 cites·19 claims
- 3981US9123726B2Selective local metal cap layer formation for improved electromigration behaviorIBM·Filed 2013·Granted Sep 1, 2015·4 cites·7 claims
- 4081US9082781B2Semiconductor article having a zig-zag guard ring and method of forming the sameIBM·Filed 2013·Granted Jul 14, 2015·5 cites·19 claims
- 4180US9478509B2Mechanically anchored backside C4 padGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 25, 2016·5 cites·18 claims
- 4280US8742766B2Stacked via structure for metal fuse applicationsIBM·Filed 2013·Granted Jun 3, 2014·3 cites·3 claims
- 4380US6518670B1Electrically porous on-chip decoupling/shielding layerIBM·Filed 2002·Granted Feb 11, 2003·29 cites·20 claims
- 4479US9385038B2Selective local metal cap layer formation for improved electromigration behaviorIBM·Filed 2015·Granted Jul 5, 2016·2 cites·6 claims
- 4579US7671362B2Test structure for determining optimal seed and liner layer thicknesses for dual damascene processingIBM·Filed 2007·Granted Mar 2, 2010·6 cites·7 claims
- 4679US7388224B2Structure for determining thermal cycle reliabilityIBM·Filed 2006·Granted Jun 17, 2008·4 cites·14 claims
- 4778US10297546B2Interconnect structures for a security applicationGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·2 cites·11 claims
- 4878US9741657B2TSV deep trench capacitor and anti-fuse structureIBM·Filed 2014·Granted Aug 22, 2017·4 cites·15 claims
- 4978US9536842B2Structure with air gap crack stopGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·4 cites·18 claims
- 5078US9059166B2Interconnect with hybrid metallizationIBM·Filed 2013·Granted Jun 16, 2015·4 cites·13 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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