Inventor
ZUBKOV VLADIMIR
US31 patents
⚠️ This page may combine multiple inventors who share the name “ZUBKOV VLADIMIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
20 patentsUS6566262B1May 20, 2003
Method for creating self-aligned alloy capping layers for copper interconnect structures
LSI LOGIC CORP83 citations97
US6989565B1Jan 24, 2006
Memory device having an electron trapping layer in a high-K dielectric gate stack
LSI LOGIC CORP84 citations96
US6303047B1Oct 16, 2001
Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same
LSI LOGIC CORP81 citations96
US6858195B2Feb 22, 2005
Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material
LSI LOGIC CORP19 citations92
US6572925B2Jun 3, 2003
Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material
LSI LOGIC CORP20 citations92
US6511925B1Jan 28, 2003
Process for forming high dielectric constant gate dielectric for integrated circuit structure
LSI LOGIC CORP32 citations92
US6365528B1Apr 2, 2002
Low temperature process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric-material characterized by improved resistance to oxidation and good gap-filling capabilities
LSI LOGIC CORP35 citations92
US6998343B1Feb 14, 2006
Method for creating barrier layers for copper diffusion
LSI LOGIC CORP26 citations90
US6673498B1Jan 6, 2004
Method for reticle formation utilizing metal vaporization
LSI LOGIC CORP7 citations74
US6627556B1Sep 30, 2003
Method of chemically altering a silicon surface and associated electrical devices
LSI LOGIC CORP7 citations74
US7132336B1Nov 7, 2006
Method and apparatus for forming a memory structure having an electron affinity region
LSI LOGIC CORP7 citations72
US7015168B2Mar 21, 2006
Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation
LSI LOGIC CORP3 citations63
US6822308B2Nov 23, 2004
Method of chemically altering a silicon surface and associated electrical devices
LSI LOGIC CORP2 citations63
US6743474B1Jun 1, 2004
Method for growing thin films
LSI LOGIC CORP2 citations63
US6649219B2Nov 18, 2003
Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation
LSI LOGIC CORP4 citations63
US6747358B1Jun 8, 2004
Self-aligned alloy capping layers for copper interconnect structures
LSI LOGIC CORP2 citations62
US7115991B1Oct 3, 2006
Method for creating barriers for copper diffusion
LSI LOGIC CORP1 citations52
US7081296B2Jul 25, 2006
Method for growing thin films
LSI LOGIC CORP0 citations52
US7015096B1Mar 21, 2006
Bimetallic oxide compositions for gate dielectrics
LSI LOGIC CORP0 citations52
US6919263B2Jul 19, 2005
High-K dielectric gate material uniquely formed
LSI LOGIC CORP1 citations51
APPLIED MATERIALS INC
5 patentsUS7790635B2Sep 7, 2010
Method to increase the compressive stress of PECVD dielectric films
APPLIED MATERIALS INC8 citations83
US7732342B2Jun 8, 2010
Method to increase the compressive stress of PECVD silicon nitride films
APPLIED MATERIALS INC10 citations82
US7718548B2May 18, 2010
Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface
APPLIED MATERIALS INC11 citations81
US7816205B2Oct 19, 2010
Method of forming non-volatile memory having charge trap layer with compositional gradient
APPLIED MATERIALS INC5 citations74
US8343881B2Jan 1, 2013
Silicon dioxide layer deposited with BDEAS
APPLIED MATERIALS INC0 citations52
BALSEANU MIHAELA
4 patentsUS8129290B2Mar 6, 2012
Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
BALSEANU MIHAELA492 citations98
US8753989B2Jun 17, 2014
Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
BALSEANU MIHAELA5 citations83
US8252653B2Aug 28, 2012
Method of forming a non-volatile memory having a silicon nitride charge trap layer
BALSEANU MIHAELA2 citations62
US8501568B2Aug 6, 2013
Method of forming flash memory with ultraviolet treatment
BALSEANU MIHAELA0 citations52