P
US7081296B2ExpiredUtilityPatentIndex 52

Method for growing thin films

Assignee: LSI LOGIC CORPPriority: Oct 25, 2001Filed: Mar 16, 2004Granted: Jul 25, 2006
Est. expiryOct 25, 2021(expired)· nominal 20-yr term from priority
Inventors:ARONOWITZ SHELDONZUBKOV VLADIMIRSCHINELLA RICHARD
H10P 14/69395H10P 14/6339H10P 14/6336H10P 14/662C23C 16/45527C23C 16/455C23C 16/45525Y10T428/265C23C 16/463
52
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Claims

Abstract

A method of forming a layer over a substrate is provided. Generally, a layer of a first reactive species is deposited over the substrate. The layer of the first reactive species is reacted with a second reactive species to create a first product. Unreacted reactive species is preferentially desorbed leaving a layer of the first product.

Claims

exact text as granted — not AI-modified
1. A thin, film of a plurality of layers over a substrate, wherein each layer is individually formed by the method, comprising:
 depositing a layer of a first reactive species over the substrate; 
 chemically reacting the layer of the first reactive species with a second reactive species to create a first product; and 
 preferentially desorbing an unreacted reactive species leaving a layer of the first product. 
 
   
   
     2. The thin film, as recited in  claim 1 , wherein the depositing of a layer deposits a monolayer. 
   
   
     3. The thin film, as recited in  claim 2 , wherein the depositing of a layer is by simple vapor deposition. 
   
   
     4. The thin film, as recited in  claim 3 , wherein the simple vapor deposition is preformed by vaporizing a solid or liquid by heating. 
   
   
     5. The thin film, as recited in  claim 4 , wherein the unreacted reactive species that is desorbed is the first reactive species.

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