Inventor
KANG SHIN HWAN
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KANG SHIN HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS10748923B2Aug 18, 2020
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations94
US10068917B2Sep 4, 2018
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD22 citations94
US10367003B2Jul 30, 2019
Vertical non-volatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD20 citations93
US10522562B2Dec 31, 2019
Memory device
SAMSUNG ELECTRONICS CO LTD6 citations84
US10886289B2Jan 5, 2021
Integrated circuit device including vertical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10847537B2Nov 24, 2020
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11171151B2Nov 9, 2021
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US12507412B2Dec 23, 2025
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50547EAug 19, 2025
Integrated circuit device including vertical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50225ENov 26, 2024
Integrated circuit device including vertical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11696442B2Jul 4, 2023
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11004865B2May 11, 2021
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12063781B2Aug 13, 2024
Vertical memory device having first contact plugs connected to plurality of staircase gate electrodes, respectively and second contact plugs extending through the staircase gate structure in the pad region
SAMSUNG ELECTRONICS CO LTD0 citations59
US12048156B2Jul 23, 2024
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US11335697B2May 17, 2022
Vertical memory devices having contact plugs vertically extending through plurality of gate electrodes and contacting lower circuit pattern
SAMSUNG ELECTRONICS CO LTD0 citations59
US10453859B2Oct 22, 2019
Methods of manufacturing vertical memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US11631692B2Apr 18, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations50