Inventor · disambiguated record
Joseph F. Shepard, Jr.
Also filed as: SHEPARD JOSEPH · SHEPARD JOSEPH F · SHEPARD JOSEPH F JR · SHEPARD JOSEPH FRANCIS
87 granted patents·13 pending applications·3,412 citations·filing 1978–2025
99Inventor score
Top patents by PatentIndex Score
100 records- 0199US7030481B2High density chip carrier with integrated passive devicesIBM·Filed 2002·Granted Apr 18, 2006·401 cites·52 claims
- 0299US6962872B2High density chip carrier with integrated passive devicesIBM·Filed 2004·Granted Nov 8, 2005·363 cites·29 claims
- 0398US7170164B2Cooling system for a semiconductor device and method of fabricating sameIBM·Filed 2005·Granted Jan 30, 2007·91 cites·17 claims
- 0496US7029951B2Cooling system for a semiconductor device and method of fabricating sameIBM·Filed 2003·Granted Apr 18, 2006·97 cites·35 claims
- 0594US6930060B2Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectricIBM·Filed 2003·Granted Aug 16, 2005·90 cites·20 claims
- 0693US6268299B1Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeabilityIBM·Filed 2000·Granted Jul 31, 2001·78 cites·19 claims
- 0793US4707218ALithographic image size reductionIBM·Filed 1986·Granted Nov 17, 1987·220 cites·20 claims
- 0891US5516721AIsolation structure using liquid phase oxide depositionIBM·Filed 1995·Granted May 14, 1996·126 cites·13 claims
- 0990US5616513AShallow trench isolation with self aligned PSG layerIBM·Filed 1995·Granted Apr 1, 1997·97 cites·7 claims
- 1090US5395786AMethod of making a DRAM cell with trench capacitorIBM·Filed 1994·Granted Mar 7, 1995·102 cites·13 claims
- 1189US5376578AMethod of fabricating a semiconductor device with raised diffusions and isolationIBM·Filed 1993·Granted Dec 27, 1994·79 cites·19 claims
- 1288US10211045B1Microwave annealing of flowable oxides with trap layersGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 19, 2019·5 cites·20 claims
- 1388US6563160B2High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuitsIBM·Filed 2001·Granted May 13, 2003·33 cites·27 claims
- 1486US5646053AMethod and structure for front-side gettering of silicon-on-insulator substratesIBM·Filed 1995·Granted Jul 8, 1997·82 cites·43 claims
- 1586US5384152AMethod for forming capacitors with roughened single crystal platesIBM·Filed 1993·Granted Jan 24, 1995·61 cites·13 claims
- 1685US5574294AVertical dual gate thin film transistor with self-aligned gates / offset drainIBM·Filed 1995·Granted Nov 12, 1996·64 cites·19 claims
- 1785US4354309AMethod of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline siliconIBM·Filed 1980·Granted Oct 19, 1982·63 cites·6 claims
- 1883US6441421B1High dielectric constant materials forming components of DRAM storage cellsIBM·Filed 2001·Granted Aug 27, 2002·31 cites·22 claims
- 1983US4249968AMethod of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layersIBM·Filed 1978·Granted Feb 10, 1981·43 cites·13 claims
- 2082US5622881APacking density for flash memoriesIBM·Filed 1994·Granted Apr 22, 1997·42 cites·10 claims
- 2182US5389559AMethod of forming integrated interconnect for very high density DRAMsIBM·Filed 1993·Granted Feb 14, 1995·46 cites·28 claims
- 2282US5245206ACapacitors with roughened single crystal platesIBM·Filed 1992·Granted Sep 14, 1993·47 cites·9 claims
- 2382US5241203AInverse T-gate FET transistor with lightly doped source and drain regionIBM·Filed 1992·Granted Aug 31, 1993·53 cites·2 claims
- 2482US4251571AMethod for forming semiconductor structure with improved isolation between two layers of polycrystalline siliconIBM·Filed 1978·Granted Feb 17, 1981·26 cites·7 claims
- 2581US5369049ADRAM cell having raised source, drain and isolationIBM·Filed 1993·Granted Nov 29, 1994·45 cites·8 claims
- 2681US4871630AMask using lithographic image size reductionIBM·Filed 1987·Granted Oct 3, 1989·68 cites·2 claims
- 2780US6936512B2Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectricIBM·Filed 2002·Granted Aug 30, 2005·23 cites·20 claims
- 2880US5120668AMethod of forming an inverse T-gate FET transistorIBM·Filed 1991·Granted Jun 9, 1992·46 cites·10 claims
- 2979US7186625B2High density MIMCAP with a unit repeatable structureIBM·Filed 2004·Granted Mar 6, 2007·23 cites·16 claims
- 3079US4506435AMethod for forming recessed isolated regionsIBM·Filed 1981·Granted Mar 26, 1985·45 cites·28 claims
- 3178US5260233ASemiconductor device and wafer structure having a planar buried interconnect by wafer bondingIBM·Filed 1992·Granted Nov 9, 1993·51 cites·43 claims
- 3278US4916083AHigh performance sidewall emitter transistorIBM·Filed 1989·Granted Apr 10, 1990·49 cites·32 claims
- 3377US9373501B2Hydroxyl group termination for nucleation of a dielectric metallic oxideIBM·Filed 2013·Granted Jun 21, 2016·3 cites·20 claims
- 3477US6909145B2Metal spacer gate for CMOS FETIBM·Filed 2002·Granted Jun 21, 2005·21 cites·28 claims
- 3577US6620724B1Low resistivity deep trench fill for DRAM and EDRAM applicationsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 16, 2003·23 cites·38 claims
- 3677US6509612B2High dielectric constant materials as gate dielectrics (insulators)IBM·Filed 2001·Granted Jan 21, 2003·19 cites·16 claims
- 3776US4341009AMethod for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrateIBM·Filed 1980·Granted Jul 27, 1982·32 cites·11 claims
- 3875US8492290B2Fabrication of silicon oxide and oxynitride having sub-nanometer thicknessCHUDZIK MICHAEL P·Filed 2011·Granted Jul 23, 2013·3 cites·20 claims
- 3975US6664161B2Method and structure for salicide trench capacitor plate electrodeIBM·Filed 2002·Granted Dec 16, 2003·19 cites·11 claims
- 4075US5573964AMethod of making thin film transistor with a self-aligned bottom gate using diffusion from a dopant source layerIBM·Filed 1995·Granted Nov 12, 1996·33 cites·17 claims
- 4175US4641170ASelf-aligned lateral bipolar transistorsIBM·Filed 1985·Granted Feb 3, 1987·32 cites·8 claims
- 4275US4191603AMaking semiconductor structure with improved phosphosilicate glass isolationIBM·Filed 1978·Granted Mar 4, 1980·29 cites·6 claims
- 4374US9029959B2Composite high-k gate dielectric stack for reducing gate leakageBRODSKY MARYJANE·Filed 2012·Granted May 12, 2015·3 cites·12 claims
- 4473US5384277AMethod for forming a DRAM trench cell capacitor having a strap connectionIBM·Filed 1993·Granted Jan 24, 1995·36 cites·14 claims
- 4572US6770526B2Silicon nitride island formation for increased capacitanceINFINEON TECHNOLOGIES CORP·Filed 2002·Granted Aug 3, 2004·16 cites·25 claims
- 4672US6541331B2Method of manufacturing high dielectric constant materialIBM·Filed 2001·Granted Apr 1, 2003·12 cites·12 claims
- 4772US5663578AThin film transistor with self-aligned bottom gateIBM·Filed 1996·Granted Sep 2, 1997·28 cites·11 claims
- 4871US6940117B2Prevention of Ta2O5 mim cap shorting in the beol anneal cyclesIBM·Filed 2003·Granted Sep 6, 2005·13 cites·18 claims
- 4971US4636834ASubmicron FET structure and method of makingIBM·Filed 1985·Granted Jan 13, 1987·28 cites·8 claims
- 5070US5643813APacking density for flash memories by using a pad oxideIBM·Filed 1995·Granted Jul 1, 1997·30 cites·5 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →