P

Inventor

BRYANT FRANK R

US69 patents
⚠️ This page may combine multiple inventors who share the name “BRYANT FRANK R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SGS THOMSON MICROELECTRONICS

32 patents
US5260229ANov 9, 1993

Method of forming isolated regions of oxide

SGS THOMSON MICROELECTRONICS86 citations96
US5006481AApr 9, 1991

Method of making a stacked capacitor DRAM cell

SGS THOMSON MICROELECTRONICS65 citations96
US5426065AJun 20, 1995

Method of making transistor devices in an SRAM cell

SGS THOMSON MICROELECTRONICS25 citations93
US5310692AMay 10, 1994

Method of forming a MOSFET structure with planar surface

SGS THOMSON MICROELECTRONICS24 citations93
US5309025AMay 3, 1994

Semiconductor bond pad structure and method

SGS THOMSON MICROELECTRONICS24 citations93
US5250456AOct 5, 1993

Method of forming an integrated circuit capacitor dielectric and a capacitor formed thereby

SGS THOMSON MICROELECTRONICS50 citations93
US5187114AFeb 16, 1993

Method of making SRAM cell and structure with polycrystalline P-channel load devices

SGS THOMSON MICROELECTRONICS46 citations93
US5116776AMay 26, 1992

Method of making a stacked copacitor for dram cell

SGS THOMSON MICROELECTRONICS45 citations93
US5057463AOct 15, 1991

Thin oxide structure and method

SGS THOMSON MICROELECTRONICS42 citations93
US4771014ASep 13, 1988

Process for manufacturing LDD CMOS devices

SGS THOMSON MICROELECTRONICS52 citations93
US5736433AApr 7, 1998

Double mask hermetic passivation method providing enhanced resistance to moisture

SGS THOMSON MICROELECTRONICS21 citations92
US5705427AJan 6, 1998

Method of forming a landing pad structure in an integrated circuit

SGS THOMSON MICROELECTRONICS30 citations92
US5702979ADec 30, 1997

Method of forming a landing pad structure in an integrated circuit

SGS THOMSON MICROELECTRONICS19 citations92
US5489797AFeb 6, 1996

Local interconnect structure

SGS THOMSON MICROELECTRONICS21 citations91
US5204279AApr 20, 1993

Method of making SRAM cell and structure with polycrystalline p-channel load devices

SGS THOMSON MICROELECTRONICS28 citations90
US5543343AAug 6, 1996

Method fabricating an integrated circuit

SGS THOMSON MICROELECTRONICS16 citations82
US5493144AFeb 20, 1996

Field progammable device with contact openings

SGS THOMSON MICROELECTRONICS17 citations82
US5416034AMay 16, 1995

Method of making resistor with silicon-rich silicide contacts for an integrated circuit

SGS THOMSON MICROELECTRONICS18 citations82
US5403777AApr 4, 1995

Semiconductor bond pad structure and method

SGS THOMSON MICROELECTRONICS19 citations82
US4981813AJan 1, 1991

Pad oxide protect sealed interface isolation process

SGS THOMSON MICROELECTRONICS20 citations82
US5696021ADec 9, 1997

Method of making a field oxide isolation structure

SGS THOMSON MICROELECTRONICS13 citations74
US5521411AMay 28, 1996

Transistor spacer etch pinpoint structure

SGS THOMSON MICROELECTRONICS9 citations74
US5448091ASep 5, 1995

Method of making contact alignment for nonvolatile memory devices

SGS THOMSON MICROELECTRONICS12 citations74
US5423939AJun 13, 1995

Method for forming contact plugs in integrated circuits

SGS THOMSON MICROELECTRONICS11 citations74
US5376571ADec 27, 1994

Method of making contact alignment for nonvolatile memory devices

SGS THOMSON MICROELECTRONICS15 citations74
US5300797AApr 5, 1994

Coplanar twin-well integrated circuit structure

SGS THOMSON MICROELECTRONICS14 citations74
US5285103AFeb 8, 1994

Structure and method for contacts in CMOS devices

SGS THOMSON MICROELECTRONICS11 citations74
US5256895AOct 26, 1993

Pad oxide protect sealed interface isolation

SGS THOMSON MICROELECTRONICS15 citations74
US5231043AJul 27, 1993

Contact alignment for integrated circuits

SGS THOMSON MICROELECTRONICS10 citations74
US5196909AMar 23, 1993

Capacitor for DRAM cell

SGS THOMSON MICROELECTRONICS7 citations74
US5164340ANov 17, 1992

Structure and method for contacts in cmos devices

SGS THOMSON MICROELECTRONICS7 citations74
US4863562ASep 5, 1989

Method for forming a non-planar structure on the surface of a semiconductor substrate

SGS THOMSON MICROELECTRONICS12 citations74

ST MICROELECTRONICS INC

15 patents
US6504226B1Jan 7, 2003

Thin-film transistor used as heating element for microreaction chamber

ST MICROELECTRONICS INC59 citations96
US6180989B1Jan 30, 2001

Selectively doped electrostatic discharge layer for an integrated circuit sensor

ST MICROELECTRONICS INC38 citations96
US6864140B2Mar 8, 2005

Thin-film transistor used as heating element for microreaction chamber

ST MICROELECTRONICS INC28 citations93
US6610555B1Aug 26, 2003

Selectively doped electrostatic discharge layer for an integrated circuit sensor

ST MICROELECTRONICS INC13 citations93
US6091132AJul 18, 2000

Passivation for integrated circuit sensors

ST MICROELECTRONICS INC26 citations93
US5914518AJun 22, 1999

Method of forming a metal contact to landing pad structure in an integrated circuit

ST MICROELECTRONICS INC22 citations92
US5894160AApr 13, 1999

Method of forming a landing pad structure in an integrated circuit

ST MICROELECTRONICS INC18 citations92
US5811865ASep 22, 1998

Dielectric in an integrated circuit

ST MICROELECTRONICS INC28 citations92
US7825917B2Nov 2, 2010

Apparatus and method for adjusting a display using an integrated ambient light sensor

ST MICROELECTRONICS INC23 citations91
US5834360ANov 10, 1998

Method of forming an improved planar isolation structure in an integrated circuit

ST MICROELECTRONICS INC19 citations91
US5927992AJul 27, 1999

Method of forming a dielectric in an integrated circuit

ST MICROELECTRONICS INC18 citations84
US7056795B2Jun 6, 2006

Thin-film transistor used as heating element for microreaction chamber

ST MICROELECTRONICS INC5 citations74
USRE36938EOct 31, 2000

Method of forming a landing pad structure in an integrated circuit

ST MICROELECTRONICS INC12 citations74
US5956615ASep 21, 1999

Method of forming a metal contact to landing pad structure in an integrated circuit

ST MICROELECTRONICS INC13 citations74
US6093963AJul 25, 2000

Dual landing pad structure including dielectric pocket

ST MICROELECTRONICS INC12 citations73

HEWLETT PACKARD CO

1 patent

MOSTEK CORP

1 patent

HEWLETT PACKARD DEVELOPMENT CO

1 patent

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