Inventor
MALMHALL ROGER KLAS
US42 patents
⚠️ This page may combine multiple inventors who share the name “MALMHALL ROGER KLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AVALANCHE TECHNOLOGY INC
18 patentsUS8374025B1Feb 12, 2013
Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer
AVALANCHE TECHNOLOGY INC40 citations98
US9318179B2Apr 19, 2016
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
AVALANCHE TECHNOLOGY INC15 citations93
US8779537B2Jul 15, 2014
Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
AVALANCHE TECHNOLOGY INC31 citations93
US8018011B2Sep 13, 2011
Low cost multi-state magnetic memory
AVALANCHE TECHNOLOGY INC39 citations93
US7869266B2Jan 11, 2011
Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
AVALANCHE TECHNOLOGY INC28 citations93
US9444039B2Sep 13, 2016
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
AVALANCHE TECHNOLOGY INC7 citations84
US9419210B2Aug 16, 2016
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
AVALANCHE TECHNOLOGY INC5 citations84
US9349941B2May 24, 2016
STTMRAM element having multiple perpendicular MTJs coupled in series
AVALANCHE TECHNOLOGY INC5 citations84
US9218866B2Dec 22, 2015
High capaciy low cost multi-state magnetic memory
AVALANCHE TECHNOLOGY INC4 citations84
US8980649B2Mar 17, 2015
Method for manufacturing non-volatile magnetic memory cell in two facilities
AVALANCHE TECHNOLOGY INC8 citations84
US8982616B1Mar 17, 2015
Spin-transfer torque magnetic random access memory (STTMRAM) with perpendicular laminated free layer
AVALANCHE TECHNOLOGY INC4 citations73
US9070692B2Jun 30, 2015
Shields for magnetic memory chip packages
AVALANCHE TECHNOLOGY INC5 citations71
US9478279B2Oct 25, 2016
High capacity low cost multi-state magnetic memory
AVALANCHE TECHNOLOGY INC1 citations63
US9337413B2May 10, 2016
High capaciy low cost multi-state magnetic memory
AVALANCHE TECHNOLOGY INC2 citations63
US8611147B2Dec 17, 2013
Spin-transfer torque magnetic random access memory (STTMRAM) using a synthetic free layer
AVALANCHE TECHNOLOGY INC4 citations63
US8542526B2Sep 24, 2013
Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
AVALANCHE TECHNOLOGY INC4 citations63
US8981506B1Mar 17, 2015
Magnetic random access memory with switchable switching assist layer
AVALANCHE TECHNOLOGY INC1 citations52
US8860158B2Oct 14, 2014
High speed STT-MRAM with orthogonal pinned layer
AVALANCHE TECHNOLOGY INC0 citations52
RANJAN RAJIV YADAV
17 patentsUS8535952B2Sep 17, 2013
Method for manufacturing non-volatile magnetic memory
RANJAN RAJIV YADAV124 citations99
US8422286B2Apr 16, 2013
Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM)
RANJAN RAJIV YADAV84 citations98
US8063459B2Nov 22, 2011
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV25 citations96
US8508984B2Aug 13, 2013
Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
RANJAN RAJIV YADAV39 citations94
US8498150B2Jul 30, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV9 citations93
US8593862B2Nov 26, 2013
Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
RANJAN RAJIV YADAV32 citations92
US8169821B1May 1, 2012
Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)
RANJAN RAJIV YADAV20 citations92
US8330240B2Dec 11, 2012
Low cost multi-state magnetic memory
RANJAN RAJIV YADAV8 citations84
US8498149B2Jul 30, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV3 citations74
US8493780B2Jul 23, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV3 citations74
US8498148B2Jul 30, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV1 citations63
US8493779B2Jul 23, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV1 citations63
US8488376B2Jul 16, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV2 citations63
US8456897B2Jun 4, 2013
Low cost multi-state magnetic memory
RANJAN RAJIV YADAV3 citations63
US8493778B2Jul 23, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV0 citations52
US8399942B2Mar 19, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV0 citations52
US8399943B2Mar 19, 2013
Non-volatile magnetic memory element with graded layer
RANJAN RAJIV YADAV0 citations52
HUAI YIMING
3 patentsUS9019758B2Apr 28, 2015
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
HUAI YIMING9 citations90
US8772886B2Jul 8, 2014
Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
HUAI YIMING5 citations71
US11678586B2Jun 13, 2023
Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same
HUAI YIMING0 citations60