Inventor

HUR SUNGHOI

KR43 patents

⚠️ This page may combine multiple inventors who share the name “HUR SUNGHOI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUR SUNGHOI

SAMSUNG ELECTRONICS CO LTD

Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby

Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics

Three-dimensional semiconductor devices having vertical structures of different lengths

Three-dimensional semiconductor memory devices and methods of fabricating the same

Nonvolatile memory device

Three-dimensional semiconductor memory devices and methods of fabricating the same

Semiconductor devices and methods for forming the same

Three-dimensional semiconductor memory devices and methods of fabricating the same

Semiconductor device

Semiconductor device, systems and methods of manufacture

Semiconductor devices and methods for forming the same

Three-dimensional semiconductor memory devices and methods of fabricating the same

Three-dimensional semiconductor memory devices and methods of fabricating the same

Semiconductor device, systems and methods of manufacture

Three-dimensional semiconductor device and method of manufacturing the same

Semiconductor device, systems and methods of manufacture

Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby

Non-volatile memory devices and methods of manufacturing the same

Memory semiconductor device and method of operating the same

SHIM SUNIL

Three-dimensional semiconductor memory device

Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristics

Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regions

Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby

Nonvolatile memory device

Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics

LEE CHANGHYUN

Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Nonvolatile memory device, programming method thereof and memory system including the same

Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Nonvolatile memory device, programming method thereof and memory system including the same

CHO BYUNGKYU

Local self-boosting method of flash memory device and program method using the same

Channel precharge and program methods of a nonvolatile memory device

Memory semiconductor device and method of operating the same

PARK JINTAEK

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

SEOL KWANG SOO

Three-dimensional semiconductor memory devices and methods of fabricating the same

YUN JANG-GN

Semiconductor devices and methods for forming the same

HUR SUNGHOI

Three-dimensional semiconductor memory device

JANG YOUNGGOAN

Three-dimensional semiconductor memory device

TAEKYUNG KIM

Semiconductor device, systems and methods of manufacture

SEOL KWNAG SOO

Charge recycling memory system and a charge recycling method thereof

KIM JINHO

Three-dimensional semiconductor devices including select gate patterns having different work function from cell gate patterns

LEE JAEDUK

Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer