Inventor
HONG HYUNG-SEOK
KR23 patents
⚠️ This page may combine multiple inventors who share the name “HONG HYUNG-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS7972950B2Jul 5, 2011
Method of fabricating semiconductor device having dual gate
SAMSUNG ELECTRONICS CO LTD8 citations84
US9543300B2Jan 10, 2017
CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9252058B2Feb 2, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US9236313B2Jan 12, 2016
Method of fabricating semiconductor device having dual gate
SAMSUNG ELECTRONICS CO LTD1 citations63
US8048787B2Nov 1, 2011
Methods of forming semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations61
USRE49538EMay 30, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US8044469B2Oct 25, 2011
Semiconductor device and associated methods
SAMSUNG ELECTRONICS CO LTD2 citations60
US8772115B2Jul 8, 2014
Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations58
US8766366B2Jul 1, 2014
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US8367502B2Feb 5, 2013
Method of manufacturing dual gate semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations49
NA HOON-JOO
3 patentsUS8748251B2Jun 10, 2014
Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices
NA HOON-JOO10 citations82
US8293599B2Oct 23, 2012
Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials
NA HOON-JOO12 citations82
US8932922B2Jan 13, 2015
Method of fabricating semiconductor device having dual gate
NA HOON-JOO0 citations51