Inventor
YAMAMOTO YOSHIKI
JP60 patents
⚠️ This page may combine multiple inventors who share the name “YAMAMOTO YOSHIKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
42 patentsUS9196705B2Nov 24, 2015
Method of manufacturing a misfet on an SOI substrate
RENESAS ELECTRONICS CORP10 citations92
US8941178B2Jan 27, 2015
MOS field-effect transistor formed on the SOI substrate
RENESAS ELECTRONICS CORP9 citations92
US9935125B2Apr 3, 2018
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP6 citations84
US9887211B2Feb 6, 2018
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP8 citations84
US9484433B2Nov 1, 2016
Method of manufacturing a MISFET on an SOI substrate
RENESAS ELECTRONICS CORP5 citations84
US10461158B2Oct 29, 2019
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP1 citations73
US10263012B2Apr 16, 2019
Semiconductor integrated circuit device comprising MISFETs in SOI and bulk substrate regions
RENESAS ELECTRONICS CORP1 citations73
US10043881B2Aug 7, 2018
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP3 citations73
US9837424B2Dec 5, 2017
Semiconductor device with anti-fuse memory element
RENESAS ELECTRONICS CORP5 citations73
US9754661B2Sep 5, 2017
Semiconductor device
RENESAS ELECTRONICS CORP3 citations73
US9343527B2May 17, 2016
Semiconductor device including an isolation film buried in a groove
RENESAS ELECTRONICS CORP3 citations73
US9130039B2Sep 8, 2015
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP5 citations73
US9349439B2May 24, 2016
Semiconductor device
RENESAS ELECTRONICS CORP2 citations63
US9024386B2May 5, 2015
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP3 citations63
US12261205B2Mar 25, 2025
Semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US12080716B2Sep 3, 2024
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US11996448B2May 28, 2024
Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layer
RENESAS ELECTRONICS CORP0 citations62
US11695012B2Jul 4, 2023
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations62
US11658211B2May 23, 2023
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations62
US11152393B2Oct 19, 2021
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations62
US10411121B2Sep 10, 2019
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP1 citations62
US10529630B2Jan 7, 2020
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP1 citations60
US9299720B2Mar 29, 2016
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP2 citations60
US12538549B2Jan 27, 2026
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US11810926B2Nov 7, 2023
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US10756115B2Aug 25, 2020
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US10559595B2Feb 11, 2020
Manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US10510775B2Dec 17, 2019
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US10411036B2Sep 10, 2019
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US10361211B2Jul 23, 2019
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US10263078B2Apr 16, 2019
Method of manufacturing a MISFET on an SOI substrate
RENESAS ELECTRONICS CORP0 citations52
US10056406B2Aug 21, 2018
Semiconductor integrated circuit device comprising MISFETs in SOI and bulk subtrate regions
RENESAS ELECTRONICS CORP0 citations52
US10002885B2Jun 19, 2018
Manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US9978839B2May 22, 2018
Method of manufacturing a MOSFET on an SOI substrate
RENESAS ELECTRONICS CORP0 citations52
US9953987B2Apr 24, 2018
Semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US9773872B2Sep 26, 2017
Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance
RENESAS ELECTRONICS CORP0 citations52
US9484456B2Nov 1, 2016
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US9484271B2Nov 1, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP1 citations52
US9460936B2Oct 4, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US9219130B2Dec 22, 2015
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US10103075B2Oct 16, 2018
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations50
US9721857B2Aug 1, 2017
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations50
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
2 patentsYAMAMOTO YOSHIKI
2 patentsMUROGA TAKEMI
1 patentMAKIYAMA HIDEKI
1 patentPANASONIC CORP
1 patentHITACHI CABLE
1 patentShowing the top 50 of 60 patents by PatentIndex Score.