Inventor

CHING KUO-CHENG

TW350 patents

⚠️ This page may combine multiple inventors who share the name “CHING KUO-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHING KUO-CHENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Multi-gate device and method of fabrication thereof

Multi-gate device and method of fabrication thereof

Method of forming semiconductor structure with horizontal gate all around structure

Multi-gate device and method of fabrication thereof

FINFETs with wrap-around silicide and method forming the same

Wrap around silicide for FinFETs

Aligned gate-all-around structure

Integrated circuits with backside power rails

Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement

Etch profile control of polysilicon structures of semiconductor devices

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device on hybrid substrate and method of manufacturing the same

FinFET with source/drain structure

Semiconductor structure with multi spacer

Silicon and silicon germanium nanowire formation

Devices including gate spacer with gap or void and methods of forming the same

Self-aligned wrapped-around structure

FinFET devices and methods of forming

Epitaxial features confined by dielectric fins and spacers

Devices including gate spacer with gap or void and methods of forming the same

Silicon and silicon germanium nanowire formation

Silicon and silicon germanium nanowire formation

Devices including gate spacer with gap or void and methods of forming the same

FinFET channel on oxide structures and related methods

FinFET device and method for fabricating same

Structure and method for FinFET device with buried sige oxide

FETs and methods of forming FETs

Recessing STI to increase fin height in fin-first process

Buried SiGe oxide FinFET scheme for device enhancement

Semiconductor device and fabricating the same

TAIWAN SEMICONDUCTOR MFG

Self-aligned wrapped-around structure

Silicon and silicon germanium nanowire formation

Fin structure of semiconductor device

Semiconductor device and fabricating the same

Source/drain stack stressor for semiconductor device

Method of fabricating a gate all around device

FinFET device and method of fabricating same

Isolation structure of fin field effect transistor

Fin recess last process for FinFET fabrication

Structure and method for SRAM FinFET device

Method and structure for FinFET device

FinFET with buried insulator layer and method for forming

Structure and method for FinFET device

Tuning strain in semiconductor devices

Semiconductor device and fabricating the same

Fin structure of semiconductor device

Semiconductor device and fabricating the same

Semiconductor devices and methods of manufacture thereof

CHING KUO-CHENG

CMOS device and method of forming the same