P

Inventor

HAN TZUNG-TING

TW50 patents
⚠️ This page may combine multiple inventors who share the name “HAN TZUNG-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

40 patents
US7435648B2Oct 14, 2008

Methods of trench and contact formation in memory cells

MACRONIX INT CO LTD29 citations91
US6624023B1Sep 23, 2003

Method for improving the performance of flash memory

MACRONIX INT CO LTD24 citations90
US10304680B1May 28, 2019

Fabricating semiconductor devices having patterns with different feature sizes

MACRONIX INT CO LTD7 citations84
US9748332B1Aug 29, 2017

Non-volatile semiconductor memory

MACRONIX INT CO LTD8 citations83
US7889556B2Feb 15, 2011

Flash memory having insulating liners between source/drain lines and channels

MACRONIX INT CO LTD7 citations82
US7710774B2May 4, 2010

NAND type multi-bit charge storage memory array and methods for operating and fabricating the same

MACRONIX INT CO LTD12 citations79
US11411020B2Aug 9, 2022

Memory device with sub-slits

MACRONIX INT CO LTD2 citations73
US6777764B2Aug 17, 2004

ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process

MACRONIX INT CO LTD10 citations73
US11727971B2Aug 15, 2023

Memory device and method of fabricating the same

MACRONIX INT CO LTD2 citations72
US7668010B2Feb 23, 2010

Flash memory having insulating liners between source/drain lines and channels

MACRONIX INT CO LTD7 citations72
US7214983B2May 8, 2007

Non-volatile memory and fabricating method thereof

MACRONIX INT CO LTD8 citations72
US9847339B2Dec 19, 2017

Self-aligned multiple patterning semiconductor device fabrication

MACRONIX INT CO LTD2 citations69
US12581654B2Mar 17, 2026

Memory device

MACRONIX INT CO LTD0 citations62
US12557292B2Feb 17, 2026

Memory device and method of fabricating the same

MACRONIX INT CO LTD0 citations62
US12543325B2Feb 3, 2026

Three-dimensional semiconductor devices

MACRONIX INT CO LTD0 citations62
US12069861B2Aug 20, 2024

Memory device with reduced bending stack

MACRONIX INT CO LTD0 citations62
US7486534B2Feb 3, 2009

Diode-less array for one-time programmable memory

MACRONIX INT CO LTD2 citations62
US7067374B2Jun 27, 2006

Manufacturing methods and structures of memory device

MACRONIX INT CO LTD5 citations62
US12062615B2Aug 13, 2024

Memory device

MACRONIX INT CO LTD0 citations61
US11610842B2Mar 21, 2023

Memory device and method of manufacturing the same

MACRONIX INT CO LTD0 citations61
US7341910B2Mar 11, 2008

Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate

MACRONIX INT CO LTD4 citations61
US9070753B1Jun 30, 2015

Method for fabricating memory device

MACRONIX INT CO LTD2 citations60
US11690222B2Jun 27, 2023

Three-dimensional memory device

MACRONIX INT CO LTD0 citations52
US11127756B2Sep 21, 2021

Three-dimensional memory device and manufacturing method thereof

MACRONIX INT CO LTD0 citations52
US10290543B1May 14, 2019

Method for manufacturing semiconductor device

MACRONIX INT CO LTD1 citations52
US12256548B2Mar 18, 2025

Semiconductor device and method for manufacturing the same

MACRONIX INT CO LTD0 citations51
US11515319B2Nov 29, 2022

Semiconductor memory structure and manufacturing method thereof

MACRONIX INT CO LTD0 citations51
USRE46970EJul 24, 2018

Diode-less array for one-time programmable memory

MACRONIX INT CO LTD0 citations51
US9036393B2May 19, 2015

Diode-less array for one-time programmable memory

MACRONIX INT CO LTD0 citations51
US7888272B2Feb 15, 2011

Methods for manufacturing memory and logic devices using the same process without the need for additional masks

MACRONIX INT CO LTD0 citations51
US7659167B2Feb 9, 2010

Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate

MACRONIX INT CO LTD0 citations51
US11637125B2Apr 25, 2023

Memory device

MACRONIX INT CO LTD0 citations50
US9899396B1Feb 20, 2018

Semiconductor device, fabricating method thereof, and fabricating method of memory

MACRONIX INT CO LTD1 citations50
US7776690B2Aug 17, 2010

Method of forming a contact on a semiconductor device

MACRONIX INT CO LTD0 citations50
US7666784B2Feb 23, 2010

Methods of trench and contact formation in memory cells

MACRONIX INT CO LTD0 citations50
US7271062B2Sep 18, 2007

Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory

MACRONIX INT CO LTD1 citations50
US12048154B2Jul 23, 2024

Memory device and manufacturing method thereof

MACRONIX INT CO LTD0 citations48
US9536887B2Jan 3, 2017

Airgap structure and method of manufacturing thereof

MACRONIX INT CO LTD0 citations45
US9553047B2Jan 24, 2017

Method of manufacturing semiconductor devices with combined array and periphery patterning in self-aligned quadruple patterning

MACRONIX INT CO LTD0 citations39
US6841446B2Jan 11, 2005

Fabrication method for a flash memory device

MACRONIX INT CO LTD0 citations38

HUANG YU-FONG

6 patents

CHEN KUAN-FU

2 patents

KU SHAW-HUNG

1 patent

CHEN KUAN FU

1 patent