Inventor
HAN TZUNG-TING
TW50 patents
⚠️ This page may combine multiple inventors who share the name “HAN TZUNG-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
40 patentsUS7435648B2Oct 14, 2008
Methods of trench and contact formation in memory cells
MACRONIX INT CO LTD29 citations91
US6624023B1Sep 23, 2003
Method for improving the performance of flash memory
MACRONIX INT CO LTD24 citations90
US10304680B1May 28, 2019
Fabricating semiconductor devices having patterns with different feature sizes
MACRONIX INT CO LTD7 citations84
US9748332B1Aug 29, 2017
Non-volatile semiconductor memory
MACRONIX INT CO LTD8 citations83
US7889556B2Feb 15, 2011
Flash memory having insulating liners between source/drain lines and channels
MACRONIX INT CO LTD7 citations82
US7710774B2May 4, 2010
NAND type multi-bit charge storage memory array and methods for operating and fabricating the same
MACRONIX INT CO LTD12 citations79
US11411020B2Aug 9, 2022
Memory device with sub-slits
MACRONIX INT CO LTD2 citations73
US6777764B2Aug 17, 2004
ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process
MACRONIX INT CO LTD10 citations73
US11727971B2Aug 15, 2023
Memory device and method of fabricating the same
MACRONIX INT CO LTD2 citations72
US7668010B2Feb 23, 2010
Flash memory having insulating liners between source/drain lines and channels
MACRONIX INT CO LTD7 citations72
US7214983B2May 8, 2007
Non-volatile memory and fabricating method thereof
MACRONIX INT CO LTD8 citations72
US9847339B2Dec 19, 2017
Self-aligned multiple patterning semiconductor device fabrication
MACRONIX INT CO LTD2 citations69
US12581654B2Mar 17, 2026
Memory device
MACRONIX INT CO LTD0 citations62
US12557292B2Feb 17, 2026
Memory device and method of fabricating the same
MACRONIX INT CO LTD0 citations62
US12543325B2Feb 3, 2026
Three-dimensional semiconductor devices
MACRONIX INT CO LTD0 citations62
US12069861B2Aug 20, 2024
Memory device with reduced bending stack
MACRONIX INT CO LTD0 citations62
US7486534B2Feb 3, 2009
Diode-less array for one-time programmable memory
MACRONIX INT CO LTD2 citations62
US7067374B2Jun 27, 2006
Manufacturing methods and structures of memory device
MACRONIX INT CO LTD5 citations62
US12062615B2Aug 13, 2024
Memory device
MACRONIX INT CO LTD0 citations61
US11610842B2Mar 21, 2023
Memory device and method of manufacturing the same
MACRONIX INT CO LTD0 citations61
US7341910B2Mar 11, 2008
Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate
MACRONIX INT CO LTD4 citations61
US9070753B1Jun 30, 2015
Method for fabricating memory device
MACRONIX INT CO LTD2 citations60
US11690222B2Jun 27, 2023
Three-dimensional memory device
MACRONIX INT CO LTD0 citations52
US11127756B2Sep 21, 2021
Three-dimensional memory device and manufacturing method thereof
MACRONIX INT CO LTD0 citations52
US10290543B1May 14, 2019
Method for manufacturing semiconductor device
MACRONIX INT CO LTD1 citations52
US12256548B2Mar 18, 2025
Semiconductor device and method for manufacturing the same
MACRONIX INT CO LTD0 citations51
US11515319B2Nov 29, 2022
Semiconductor memory structure and manufacturing method thereof
MACRONIX INT CO LTD0 citations51
USRE46970EJul 24, 2018
Diode-less array for one-time programmable memory
MACRONIX INT CO LTD0 citations51
US9036393B2May 19, 2015
Diode-less array for one-time programmable memory
MACRONIX INT CO LTD0 citations51
US7888272B2Feb 15, 2011
Methods for manufacturing memory and logic devices using the same process without the need for additional masks
MACRONIX INT CO LTD0 citations51
US7659167B2Feb 9, 2010
Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate
MACRONIX INT CO LTD0 citations51
US11637125B2Apr 25, 2023
Memory device
MACRONIX INT CO LTD0 citations50
US9899396B1Feb 20, 2018
Semiconductor device, fabricating method thereof, and fabricating method of memory
MACRONIX INT CO LTD1 citations50
US7776690B2Aug 17, 2010
Method of forming a contact on a semiconductor device
MACRONIX INT CO LTD0 citations50
US7666784B2Feb 23, 2010
Methods of trench and contact formation in memory cells
MACRONIX INT CO LTD0 citations50
US7271062B2Sep 18, 2007
Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory
MACRONIX INT CO LTD1 citations50
US12048154B2Jul 23, 2024
Memory device and manufacturing method thereof
MACRONIX INT CO LTD0 citations48
US9536887B2Jan 3, 2017
Airgap structure and method of manufacturing thereof
MACRONIX INT CO LTD0 citations45
US9553047B2Jan 24, 2017
Method of manufacturing semiconductor devices with combined array and periphery patterning in self-aligned quadruple patterning
MACRONIX INT CO LTD0 citations39
US6841446B2Jan 11, 2005
Fabrication method for a flash memory device
MACRONIX INT CO LTD0 citations38
HUANG YU-FONG
6 patentsUS8466064B2Jun 18, 2013
Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device
HUANG YU-FONG0 citations50
US8779500B2Jul 15, 2014
Memory device
HUANG YU-FONG0 citations49
US8623726B2Jan 7, 2014
Method for filling a physical isolation trench and integrating a vertical channel array with a periphery circuit
HUANG YU-FONG0 citations49
US8890254B2Nov 18, 2014
Airgap structure and method of manufacturing thereof
HUANG YU-FONG0 citations45
US8916920B2Dec 23, 2014
Memory structure with planar upper surface
HUANG YU-FONG0 citations39
US8391063B2Mar 5, 2013
Method of operating memory cell
HUANG YU-FONG0 citations39