P

Inventor

CHEN YU-SHENG

TW79 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YU-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

30 patents
US11581039B2Feb 14, 2023

Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11942146B2Mar 26, 2024

Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11837611B2Dec 5, 2023

Data storage element and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11443803B2Sep 13, 2022

Memory device and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11342380B2May 24, 2022

Memory devices with selector layer and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847221B2Nov 24, 2020

Memory device and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10541365B1Jan 21, 2020

Phase change memory and method of fabricating same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11967375B2Apr 23, 2024

Memory cell with built-in amplifying function, memory device and method using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11183236B2Nov 23, 2021

Memory cell with built-in amplifying function, memory device and method using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11183449B1Nov 23, 2021

Cryogenic integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11139431B2Oct 5, 2021

Horizontal memory array structure with scavenger layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12389694B2Aug 12, 2025

Data storage element and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324364B2Jun 3, 2025

Memory device and operating method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12232331B2Feb 18, 2025

Memory devices with selector layer and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12217817B2Feb 4, 2025

Memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990182B2May 21, 2024

Operation methods for ovonic threshold selector, memory device and memory array

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11963369B2Apr 16, 2024

Memory array with asymmetric bit-line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862243B2Jan 2, 2024

Memory device and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805662B2Oct 31, 2023

Memory devices with selector layer and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11763857B2Sep 19, 2023

Memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605779B2Mar 14, 2023

Memory cell, method of forming the same, and semiconductor die

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11588106B2Feb 21, 2023

Method to effectively suppress heat dissipation in PCRAM devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11482571B2Oct 25, 2022

Memory array with asymmetric bit-line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11276464B2Mar 15, 2022

Programming method and reading method for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217304B2Jan 4, 2022

Memory operation method and circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971223B2Apr 6, 2021

Phase change memory operation method and circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10818349B2Oct 27, 2020

Programming method and reading method for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12010928B2Jun 11, 2024

Memory cell, semiconductor device having the same, and methods of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11152565B2Oct 19, 2021

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12550335B2Feb 10, 2026

Ferroelectric tunnel junction (FTJ) structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59

CHEN YU-SHENG

5 patents

LOTES CO LTD

4 patents

IND TECH RES INST

3 patents

CHEN FREDERICK T

1 patent

CHEN YU SHENG

1 patent

JANG SHENG-LYANG

1 patent

INNOLUX CORP

1 patent

MEDIATEK INC

1 patent

INVENTEC APPLIANCES CORP

1 patent

CHEN CHUN-LUNG

1 patent

GREAT-EAGLE TECH CO LTD

1 patent

Showing the top 50 of 79 patents by PatentIndex Score.