Inventor
CHEN YU-SHENG
TW79 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YU-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS11581039B2Feb 14, 2023
Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11942146B2Mar 26, 2024
Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11837611B2Dec 5, 2023
Data storage element and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11443803B2Sep 13, 2022
Memory device and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11342380B2May 24, 2022
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847221B2Nov 24, 2020
Memory device and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10541365B1Jan 21, 2020
Phase change memory and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11967375B2Apr 23, 2024
Memory cell with built-in amplifying function, memory device and method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11183236B2Nov 23, 2021
Memory cell with built-in amplifying function, memory device and method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11183449B1Nov 23, 2021
Cryogenic integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11139431B2Oct 5, 2021
Horizontal memory array structure with scavenger layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12389694B2Aug 12, 2025
Data storage element and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324364B2Jun 3, 2025
Memory device and operating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12232331B2Feb 18, 2025
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12217817B2Feb 4, 2025
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990182B2May 21, 2024
Operation methods for ovonic threshold selector, memory device and memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11963369B2Apr 16, 2024
Memory array with asymmetric bit-line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862243B2Jan 2, 2024
Memory device and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805662B2Oct 31, 2023
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11763857B2Sep 19, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605779B2Mar 14, 2023
Memory cell, method of forming the same, and semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11588106B2Feb 21, 2023
Method to effectively suppress heat dissipation in PCRAM devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11482571B2Oct 25, 2022
Memory array with asymmetric bit-line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11276464B2Mar 15, 2022
Programming method and reading method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217304B2Jan 4, 2022
Memory operation method and circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971223B2Apr 6, 2021
Phase change memory operation method and circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10818349B2Oct 27, 2020
Programming method and reading method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12010928B2Jun 11, 2024
Memory cell, semiconductor device having the same, and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11152565B2Oct 19, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12550335B2Feb 10, 2026
Ferroelectric tunnel junction (FTJ) structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
CHEN YU-SHENG
5 patentsUS8817521B2Aug 26, 2014
Control method for memory cell
CHEN YU-SHENG12 citations80
US8643447B2Feb 4, 2014
Terminal circuit and bi-directional coupler using the terminal circuit
CHEN YU-SHENG4 citations69
US8913203B2Dec 16, 2014
Stereoscopic display device comprising a phase retardation film with first-phase and second-phase retardation regions corresponding to positions of left and right eye pixel regions
CHEN YU-SHENG2 citations62
US8502715B2Aug 6, 2013
Signal processing system and self-calibration digital-to-analog converting method thereof
CHEN YU-SHENG3 citations59
US8223528B2Jul 17, 2012
Control method for memory cell
CHEN YU-SHENG2 citations58
LOTES CO LTD
4 patentsUS7628655B1Dec 8, 2009
Electrical connector and inserting method thereof
LOTES CO LTD43 citations92
US10998660B2May 4, 2021
Connector assembly
LOTES CO LTD8 citations84
US10122141B1Nov 6, 2018
Method for manufacturing electrical connector
LOTES CO LTD4 citations71
US10804008B2Oct 13, 2020
Electrical component
LOTES CO LTD1 citations62
IND TECH RES INST
3 patentsUS10193059B2Jan 29, 2019
Perpendicularly magnetized spin-orbit magnetic device
IND TECH RES INST16 citations93
US10546622B2Jan 28, 2020
Spin-orbit torque MRAMs and method for fabricating the same
IND TECH RES INST3 citations70
US9257641B2Feb 9, 2016
Via structure, memory array structure, three-dimensional resistance memory and method of forming the same
IND TECH RES INST4 citations70
CHEN FREDERICK T
1 patentCHEN YU SHENG
1 patentJANG SHENG-LYANG
1 patentINNOLUX CORP
1 patentMEDIATEK INC
1 patentINVENTEC APPLIANCES CORP
1 patentCHEN CHUN-LUNG
1 patentGREAT-EAGLE TECH CO LTD
1 patentShowing the top 50 of 79 patents by PatentIndex Score.