Inventor
ZHENG PENGYUAN
US16 patents
⚠️ This page may combine multiple inventors who share the name “ZHENG PENGYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
15 patentsUS11158561B2Oct 26, 2021
Memory device with low density thermal barrier
MICRON TECHNOLOGY INC1 citations70
US12402318B2Aug 26, 2025
Metal gate stacks for CMOS scaling
MICRON TECHNOLOGY INC0 citations62
US11721606B2Aug 8, 2023
Memory device with high resistivity thermal barrier
MICRON TECHNOLOGY INC0 citations61
US11659778B2May 23, 2023
Composite electrode material chemistry
MICRON TECHNOLOGY INC1 citations61
US11631811B2Apr 18, 2023
WSiGe electrode structures for memory devices, and associated devices and systems
MICRON TECHNOLOGY INC0 citations61
US10964621B2Mar 30, 2021
Memory device with high resistivity thermal barrier
MICRON TECHNOLOGY INC0 citations61
US12431407B2Sep 30, 2025
Memory device with low density thermal barrier
MICRON TECHNOLOGY INC0 citations60
US11984382B2May 14, 2024
Memory device with low density thermal barrier
MICRON TECHNOLOGY INC0 citations60
US11545623B2Jan 3, 2023
Fabrication of electrodes for memory cells
MICRON TECHNOLOGY INC0 citations60
US10825987B2Nov 3, 2020
Fabrication of electrodes for memory cells
MICRON TECHNOLOGY INC1 citations60
US11011378B2May 18, 2021
Atom implantation for reduction of compressive stress
MICRON TECHNOLOGY INC0 citations59
US11778837B2Oct 3, 2023
Memory with optimized resistive layers
MICRON TECHNOLOGY INC0 citations58
US11380732B2Jul 5, 2022
Memory with optimized resistive layers
MICRON TECHNOLOGY INC0 citations58
US12499944B2Dec 16, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations51
US12525536B2Jan 13, 2026
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations50