Inventor

HU YONGJUN J

US26 patents

⚠️ This page may combine multiple inventors who share the name “HU YONGJUN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU YONGJUN J

MICRON TECHNOLOGY INC

Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces

Methods and apparatuses having strings of memory cells including a metal source

Method and structure for reducing resistance of a semiconductor device feature

Dual work function metal gates and methods of forming

Apparatus comprising structures including contact vias and conductive lines, related methods, and memory devices

Memory device with low density thermal barrier

Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces

Microelectronic devices and memory devices including conductive levels having varying compositions

Semiconductor devices comprising threshold switching materials

Microelectronic devices including conductive levels having varying compositions, and related memory devices, electronic systems, and methods

Semiconductor devices and electronic systems including an etch stop material, and related methods

Devices, methods of forming a device, and memory devices

Methods of forming an apparatus, and related apparatuses and electronic systems

Dual work function metal gates and methods of forming

Composite electrode material chemistry

WSiGe electrode structures for memory devices, and associated devices and systems

Memory device with low density thermal barrier

Apparatus and memory device including conductive lines and contacts, and methods of forming an apparatus including conductive lines and contacts

Memory device with low density thermal barrier

Fabrication of electrodes for memory cells

Fabrication of electrodes for memory cells

Microelectronic devices including conductive structures

Microelectronic devices including conductive structures, and related memory devices, electronic systems, and methods

Atom implantation for reduction of compressive stress

Method and structure for reducing resistance of a semiconductor device feature

INTEL CORP

Barrier film techniques and configurations for phase-change memory elements