Inventor
SCOTT MICHAEL C
US48 patents
⚠️ This page may combine multiple inventors who share the name “SCOTT MICHAEL C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SYMETRIX CORP
42 patentsUS5519234AMay 21, 1996
Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
SYMETRIX CORP441 citations99
US5434102AJul 18, 1995
Process for fabricating layered superlattice materials and making electronic devices including same
SYMETRIX CORP109 citations99
US6051858AApr 18, 2000
Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
SYMETRIX CORP125 citations98
US5759923AJun 2, 1998
Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits
SYMETRIX CORP102 citations98
US5699035ADec 16, 1997
ZnO thin-film varistors and method of making the same
SYMETRIX CORP104 citations98
US6056994AMay 2, 2000
Liquid deposition methods of fabricating layered superlattice materials
SYMETRIX CORP63 citations96
US5814849ASep 29, 1998
Thin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with same
SYMETRIX CORP38 citations96
US5648114AJul 15, 1997
Chemical vapor deposition process for fabricating layered superlattice materials
SYMETRIX CORP85 citations96
US5614018AMar 25, 1997
Integrated circuit capacitors and process for making the same
SYMETRIX CORP78 citations96
US5612082AMar 18, 1997
Process for making metal oxides
SYMETRIX CORP67 citations96
US5514822AMay 7, 1996
Precursors and processes for making metal oxides
SYMETRIX CORP70 citations96
US6372286B1Apr 16, 2002
Barium strontium titanate integrated circuit capacitors and process for making the same
SYMETRIX CORP40 citations93
US6174564B1Jan 16, 2001
Method of making metal polyoxyalkylated precursor solutions
SYMETRIX CORP28 citations93
US6133050AOct 17, 2000
UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue
SYMETRIX CORP19 citations93
US6080592AJun 27, 2000
Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications
SYMETRIX CORP27 citations93
US6072207AJun 6, 2000
Process for fabricating layered superlattice materials and making electronic devices including same
SYMETRIX CORP36 citations93
US5723361AMar 3, 1998
Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same
SYMETRIX CORP44 citations93
US5690727ANov 25, 1997
Thin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with same
SYMETRIX CORP21 citations93
US5688565ANov 18, 1997
Misted deposition method of fabricating layered superlattice materials
SYMETRIX CORP50 citations93
US5654456AAug 5, 1997
Precursors and processes for making metal oxides
SYMETRIX CORP29 citations93
US5624707AApr 29, 1997
Method of forming ABO3 films with excess B-site modifiers
SYMETRIX CORP18 citations93
US5601869AFeb 11, 1997
Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same
SYMETRIX CORP33 citations93
US5559260ASep 24, 1996
Precursors and processes for making metal oxides
SYMETRIX CORP44 citations93
US5508226AApr 16, 1996
Low temperature process for fabricating layered superlattice materialsand making electronic devices including same
SYMETRIX CORP48 citations93
US5468679ANov 21, 1995
Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
SYMETRIX CORP43 citations93
US6022669AFeb 8, 2000
Method of fabricating an integrated circuit using self-patterned thin films
SYMETRIX CORP25 citations92
US5942376AAug 24, 1999
Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films
SYMETRIX CORP34 citations92
US5849071ADec 15, 1998
Liquid source formation of thin films using hexamethyl-disilazane
SYMETRIX CORP27 citations92
US5843516ADec 1, 1998
Liquid source formation of thin films using hexamethyl-disilazane
SYMETRIX CORP30 citations92
US5516363AMay 14, 1996
Specially doped precursor solutions for use in methods of producing doped ABO3 -type average perovskite thin-film capacitors
SYMETRIX CORP36 citations92
US6454964B1Sep 24, 2002
Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same
SYMETRIX CORP14 citations84
US6447838B1Sep 10, 2002
Integrated circuit capacitors with barrier layer and process for making the same
SYMETRIX CORP15 citations84
US5792592AAug 11, 1998
Photosensitive liquid precursor solutions and use thereof in making thin films
SYMETRIX CORP19 citations84
US5825057AOct 20, 1998
Process for fabricating layered superlattice materials and making electronic devices including same
SYMETRIX CORP16 citations82
US6285048B1Sep 4, 2001
Barium strontium titanate integrated circuit capacitors and process for making the same
SYMETRIX CORP9 citations74
US6017579AJan 25, 2000
Method of forming magnesium oxide films on glass substrate for use in plasma display panels
SYMETRIX CORP10 citations74
US5909042AJun 1, 1999
Electrical component having low-leakage current and low polarization fatigue made by UV radiation process
SYMETRIX CORP10 citations74
US5871853AFeb 16, 1999
UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue
SYMETRIX CORP9 citations74
US5620739AApr 15, 1997
Thin film capacitors on gallium arsenide substrate and process for making the same
SYMETRIX CORP12 citations74
US5788757AAug 4, 1998
Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same
SYMETRIX CORP6 citations73
US6327135B1Dec 4, 2001
Thin film capacitors on gallium arsenide substrate
SYMETRIX CORP2 citations63
US5846597ADec 8, 1998
Liquid source formation of thin films using hexamethyl-disilazane
SYMETRIX CORP1 citations63
OLYMPUS OPTICAL CO
2 patentsUS5439845AAug 8, 1995
Process for fabricating layered superlattice materials and making electronic devices including same
OLYMPUS OPTICAL CO55 citations96
US5423285AJun 13, 1995
Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
OLYMPUS OPTICAL CO76 citations96