Inventor
FAN DER-TSYR
TW31 patents
⚠️ This page may combine multiple inventors who share the name “FAN DER-TSYR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOSEL VITELIC INC
9 patentsUS6110801AAug 29, 2000
Method of fabricating trench isolation for IC manufacture
MOSEL VITELIC INC9 citations73
US5747378AMay 5, 1998
Method of damage free doping for forming a dram memory cell
MOSEL VITELIC INC9 citations72
US5837578ANov 17, 1998
Process of manufacturing a trenched stack-capacitor
MOSEL VITELIC INC12 citations71
US5926715AJul 20, 1999
Method of forming lightly-doped drain by automatic PSG doping
MOSEL VITELIC INC13 citations69
US5882984AMar 16, 1999
Method for increasing the refresh time of the DRAM
MOSEL VITELIC INC4 citations61
US6365064B1Apr 2, 2002
Method for evenly immersing a wafer in a solution
MOSEL VITELIC INC6 citations60
US6654291B2Nov 25, 2003
Electrically erasable programmable read-only memory and method of erasing select memory cells
MOSEL VITELIC INC5 citations58
US6380072B2Apr 30, 2002
Metallizing process of semiconductor industry
MOSEL VITELIC INC0 citations50
US6245608B1Jun 12, 2001
Ion implantation process for forming contact regions in semiconductor materials
MOSEL VITELIC INC1 citations49
SILICON STORAGE TECH INC
6 patentsUS7718488B2May 18, 2010
Process of fabricating flash memory with enhanced program and erase coupling
SILICON STORAGE TECH INC35 citations92
US7668013B2Feb 23, 2010
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
SILICON STORAGE TECH INC17 citations91
US7217621B2May 15, 2007
Self-aligned split-gate NAND flash memory and fabrication process
SILICON STORAGE TECH INC10 citations83
US7646641B2Jan 12, 2010
NAND flash memory with nitride charge storage gates and fabrication process
SILICON STORAGE TECH INC4 citations63
US7501321B2Mar 10, 2009
NAND flash memory with densely packed memory gates and fabrication process
SILICON STORAGE TECH INC2 citations63
US7974136B2Jul 5, 2011
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
SILICON STORAGE TECH INC2 citations61
XINNOVA TECH LTD
5 patentsUS9673338B2Jun 6, 2017
Non-volatile memory unit and method for manufacturing the same
XINNOVA TECH LTD10 citations82
US9502513B2Nov 22, 2016
Non-volatile memory device and manufacture of the same
XINNOVA TECH LTD2 citations61
US9502582B2Nov 22, 2016
Non-volatile memory unit and method for manufacturing the same
XINNOVA TECH LTD1 citations61
US9647143B2May 9, 2017
Non-volatile memory unit and method for manufacturing the same
XINNOVA TECH LTD0 citations51
US9640403B2May 2, 2017
Low electric field source erasable non-volatile memory and methods for producing same
XINNOVA TECH LTD1 citations51
ACTRANS SYSTEM INC USA
4 patentsUS6894339B2May 17, 2005
Flash memory with trench select gate and fabrication process
ACTRANS SYSTEM INC USA156 citations98
US7046552B2May 16, 2006
Flash memory with enhanced program and erase coupling and process of fabricating the same
ACTRANS SYSTEM INC USA45 citations95
US7037787B2May 2, 2006
Flash memory with trench select gate and fabrication process
ACTRANS SYSTEM INC USA59 citations95
US6992929B2Jan 31, 2006
Self-aligned split-gate NAND flash memory and fabrication process
ACTRANS SYSTEM INC USA59 citations94
IOTMEMORY TECH INC
4 patentsUS10644011B1May 5, 2020
Non-volatile memory
IOTMEMORY TECH INC5 citations69
US12225723B2Feb 11, 2025
Non-volatile memory device
IOTMEMORY TECH INC0 citations55
US12527035B2Jan 13, 2026
Non-volatile memory device
IOTMEMORY TECH INC0 citations46
US12279422B2Apr 15, 2025
Method of manufacturing non-volatile memory device
IOTMEMORY TECH INC0 citations45