P

Inventor

MIYATAKE HIDESHI

JP38 patents

Patents

38 patents
US4903268AFeb 20, 1990

Semiconductor memory device having on-chip error check and correction functions

MITSUBISHI ELECTRIC CORP59 citations96
US4837747AJun 6, 1989

Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block

MITSUBISHI ELECTRIC CORP77 citations96
US4730320AMar 8, 1988

Semiconductor memory device

MITSUBISHI ELECTRIC CORP63 citations96
US4675850AJun 23, 1987

Semiconductor memory device

MITSUBISHI ELECTRIC CORP58 citations96
US4575825AMar 11, 1986

Semiconductor memory device

MITSUBISHI ELECTRIC CORP69 citations96
US4903238AFeb 20, 1990

Semiconductor memory device with improved immunity to supply voltage fluctuations

MITSUBISHI ELECTRIC CORP27 citations93
US4899313AFeb 6, 1990

Semiconductor memory device with an improved multi-bit test mode

MITSUBISHI ELECTRIC CORP28 citations93
US4896297AJan 23, 1990

Circuit for generating a boosted signal for a word line

MITSUBISHI ELECTRIC CORP35 citations93
US5255235AOct 19, 1993

Dynamic random access memory with dummy word lines connected to bit line potential adjusting capacitors

MITSUBISHI ELECTRIC CORP26 citations92
US4982367AJan 1, 1991

Dynamic random access memory with well-balanced read-out voltage on bit line pair and operating method therefor

MITSUBISHI ELECTRIC CORP22 citations92
US4586167AApr 29, 1986

Semiconductor memory device

MITSUBISHI ELECTRIC CORP55 citations92
US4843596AJun 27, 1989

Semiconductor memory device with address transition detection and timing control

MITSUBISHI ELECTRIC CORP22 citations82
US4722074AJan 26, 1988

Semiconductor storage unit with I/O bus precharging and equalization

MITSUBISHI ELECTRIC CORP23 citations82
US5295094AMar 15, 1994

Memory circuit

MITSUBISHI ELECTRIC CORP13 citations74
US5019883AMay 28, 1991

Input protective apparatus of semiconductor device

MITSUBISHI ELECTRIC CORP11 citations74
US5020031AMay 28, 1991

Dynamic semiconductor memory device having improved voltage read-out

MITSUBISHI ELECTRIC CORP16 citations74
US4890011ADec 26, 1989

On-chip substrate bias generating circuit having substrate potential clamp and operating method therefor

MITSUBISHI ELECTRIC CORP19 citations74
US4823322AApr 18, 1989

Dynamic random access memory device having an improved timing arrangement

MITSUBISHI ELECTRIC CORP10 citations74
US4811304AMar 7, 1989

MDS decoder circuit with high voltage suppression of a decoupling transistor

MITSUBISHI ELECTRIC CORP20 citations74
US4809230AFeb 28, 1989

Semiconductor memory device with active pull up

MITSUBISHI ELECTRIC CORP10 citations74
US4760559AJul 26, 1988

Semiconductor memory device

MITSUBISHI ELECTRIC CORP15 citations74
US4757476AJul 12, 1988

Dummy word line driving circuit for a MOS dynamic RAM

MITSUBISHI ELECTRIC CORP8 citations74
US4736343AApr 5, 1988

Dynamic RAM with active pull-up circuit

MITSUBISHI ELECTRIC CORP9 citations74
US4734890AMar 29, 1988

Dynamic RAM having full-sized dummy cell

MITSUBISHI ELECTRIC CORP9 citations74
US4710901ADec 1, 1987

Driving circuit for a shared sense amplifier

MITSUBISHI ELECTRIC CORP7 citations74
US4934826AJun 19, 1990

Block partitioned dynamic semiconductor memory device

MITSUBISHI ELECTRIC CORP13 citations73
US4692901ASep 8, 1987

Semiconductor memory

MITSUBISHI ELECTRIC CORP16 citations73
US4641286AFeb 3, 1987

Auxiliary decoder for semiconductor memory device

MITSUBISHI ELECTRIC CORP8 citations73
US4658379AApr 14, 1987

Semiconductor memory device with a laser programmable redundancy circuit

MITSUBISHI ELECTRIC CORP17 citations71
US4980864ADec 25, 1990

Semiconductor dynamic random access memory with relaxed pitch condition for sense amplifiers and method of operating the same

MITSUBISHI ELECTRIC CORP16 citations67
US4916666AApr 10, 1990

Dynamic random access memory device and operating method therefor

MITSUBISHI ELECTRIC CORP7 citations66
USRE34463ENov 30, 1993

Semiconductor memory device with active pull up

MITSUBISHI ELECTRIC CORP2 citations63
US5189639AFeb 23, 1993

Semiconductor memory device having bit lines capable of partial operation

MITSUBISHI ELECTRIC CORP6 citations63
US5079748AJan 7, 1992

Dynamic random access memory with read-write signal of shortened duration

MITSUBISHI ELECTRIC CORP4 citations63
US4945517AJul 31, 1990

Dynamic random access memory

MITSUBISHI ELECTRIC CORP4 citations63
US4719597AJan 12, 1988

Driving circuit for a shared sense amplifier with increased speed clock generation circuit for reading addressed memory cells

MITSUBISHI ELECTRIC CORP2 citations63
US4712123ADec 8, 1987

Dynamic memory device

MITSUBISHI ELECTRIC CORP3 citations63
US4694432ASep 15, 1987

Semiconductor memory device

MITSUBISHI ELECTRIC CORP6 citations63