Inventor
NII KOJI
JP122 patents
⚠️ This page may combine multiple inventors who share the name “NII KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
25 patentsUS7502275B2Mar 10, 2009
Semiconductor memory device
RENESAS TECH CORP213 citations99
US7113421B2Sep 26, 2006
Semiconductor integrated circuit device
RENESAS TECH CORP96 citations99
US6760269B2Jul 6, 2004
Semiconductor memory device capable of generating internal data read timing precisely
RENESAS TECH CORP221 citations99
US7570525B2Aug 4, 2009
Semiconductor memory device with adjustable selected work line potential under low voltage condition
RENESAS TECH CORP53 citations98
US7079413B2Jul 18, 2006
Semiconductor memory device with back gate potential control circuit for transistor in memory cell
RENESAS TECH CORP114 citations98
US6903962B2Jun 7, 2005
Semiconductor memory device capable of controlling potential level of power supply line and/or ground line
RENESAS TECH CORP76 citations98
US6985379B2Jan 10, 2006
Semiconductor memory device
RENESAS TECH CORP34 citations96
US6741492B2May 25, 2004
Semiconductor memory device
RENESAS TECH CORP58 citations96
US7602654B2Oct 13, 2009
Semiconductor memory device comprising a plurality of static memory cells
RENESAS TECH CORP29 citations93
US7489539B2Feb 10, 2009
Semiconductor memory device
RENESAS TECH CORP10 citations93
US7471545B2Dec 30, 2008
Semiconductor memory device
RENESAS TECH CORP24 citations93
US7411860B2Aug 12, 2008
Multiport semiconductor memory device
RENESAS TECH CORP15 citations93
US7110318B2Sep 19, 2006
Semiconductor memory device
RENESAS TECH CORP15 citations93
US7035135B2Apr 25, 2006
Semiconductor memory device
RENESAS TECH CORP15 citations93
US6917560B2Jul 12, 2005
Reduction of capacitive effects in a semiconductor memory device
RENESAS TECH CORP27 citations93
US6822300B2Nov 23, 2004
Semiconductor memory device
RENESAS TECH CORP38 citations93
US6807081B2Oct 19, 2004
Semiconductor memory circuit hard to cause soft error
RENESAS TECH CORP44 citations93
US6791200B2Sep 14, 2004
Semiconductor memory device
RENESAS TECH CORP27 citations93
US6717842B2Apr 6, 2004
Static type semiconductor memory device with dummy memory cell
RENESAS TECH CORP26 citations93
US6690608B2Feb 10, 2004
Semiconductor memory device with internal data reading timing set precisely
RENESAS TECH CORP21 citations93
US7345910B2Mar 18, 2008
Semiconductor device
RENESAS TECH CORP21 citations92
US6909135B2Jun 21, 2005
Semiconductor memory device
RENESAS TECH CORP36 citations92
US6807124B2Oct 19, 2004
Memory device for activating one cell by specifying block and memory cell in the block
RENESAS TECH CORP22 citations92
US6710412B2Mar 23, 2004
Static semiconductor memory device
RENESAS TECH CORP21 citations92
US6804153B2Oct 12, 2004
Semiconductor memory device internally generating internal data read timing
RENESAS TECH CORP59 citations91
MITSUBISHI ELECTRIC CORP
9 patentsUS6535417B2Mar 18, 2003
Semiconductor storage device
MITSUBISHI ELECTRIC CORP325 citations99
US6347062B2Feb 12, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP191 citations99
US6535453B2Mar 18, 2003
Semiconductor memory device
MITSUBISHI ELECTRIC CORP85 citations98
US5535159AJul 9, 1996
Multiport memory cell circuit having read buffer for reducing read access time
MITSUBISHI ELECTRIC CORP44 citations96
US6693820B2Feb 17, 2004
Soft error resistant semiconductor memory device
MITSUBISHI ELECTRIC CORP31 citations93
US6643167B2Nov 4, 2003
Semiconductor memory
MITSUBISHI ELECTRIC CORP22 citations93
US6627960B2Sep 30, 2003
Semiconductor data storage apparatus
MITSUBISHI ELECTRIC CORP26 citations93
US6590802B2Jul 8, 2003
Semiconductor storage apparatus
MITSUBISHI ELECTRIC CORP31 citations93
US6529401B2Mar 4, 2003
Semiconductor memory
MITSUBISHI ELECTRIC CORP25 citations93
RENESAS ELECTRONICS CORP
7 patentsUS9496028B2Nov 15, 2016
Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage
RENESAS ELECTRONICS CORP12 citations93
US9218873B2Dec 22, 2015
Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage
RENESAS ELECTRONICS CORP9 citations93
US7969811B2Jun 28, 2011
Semiconductor memory device highly integrated in direction of columns
RENESAS ELECTRONICS CORP17 citations93
US9515076B2Dec 6, 2016
Semiconductor integrated circuit device
RENESAS ELECTRONICS CORP6 citations84
US9299418B2Mar 29, 2016
Semiconductor memory device for stably reading and writing data
RENESAS ELECTRONICS CORP9 citations84
US9123435B2Sep 1, 2015
Semiconductor integrated circuit device
RENESAS ELECTRONICS CORP5 citations84
US8879334B2Nov 4, 2014
Semiconductor device having timing control for read-write memory access operations
RENESAS ELECTRONICS CORP5 citations84
NII KOJI
4 patentsUS8218390B2Jul 10, 2012
Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage
NII KOJI29 citations96
US8743645B2Jun 3, 2014
Semiconductor memory device for stably reading and writing data
NII KOJI10 citations92
US8630142B2Jan 14, 2014
Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage
NII KOJI9 citations92
USRE44242EMay 28, 2013
Semiconductor memory
NII KOJI9 citations84
MAEDA NORIAKI
2 patentsRenesas Electronics Corportion
1 patentASAHI KAGAKU KOGYO CO LTD
1 patentATTOPSEMI TECH CO LTD
1 patentShowing the top 50 of 122 patents by PatentIndex Score.