Inventor · disambiguated record
Hye Jin Seo
Also filed as: SEO HYE J · SEO HYE JIN
8 granted patents·13 pending applications·62 citations·filing 2005–2021
85Inventor score
Files withHYNIX SEMICONDUCTOR INC13SAMSUNG ELECTRONICS CO LTD2AULBIO CO LTD1CHONG KUN DANG PHARMACEUTICAL CORP1KIM SANG-WOO1
Top patents by PatentIndex Score
21 records- 0190US7824975B2Method of fabricating semiconductor device having gate spacer layer with uniform thicknessHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 2, 2010·21 cites·3 claims
- 0284US8546177B2Methods of manufacturing phase-change memory device and semiconductor deviceSEO HYE JIN·Filed 2011·Granted Oct 1, 2013·12 cites·20 claims
- 0384US7589012B1Method for fabricating semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 15, 2009·14 cites·7 claims
- 0477US7893421B2Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristicHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Feb 22, 2011·8 cites·10 claims
- 0573US8609503B2Phase change memory device and fabrication method thereofLEE KEUM BUM·Filed 2012·Granted Dec 17, 2013·4 cites·28 claims
- 0666US7713831B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 11, 2010·3 cites·20 claims
- 0753US2011073826A1Phase change memory device and fabrication method thereofHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 0851US10792285B2Stabilized pharmaceutical composition containing pemetrexed or pharmaceutically acceptable salt thereofCHONG KUN DANG PHARMACEUTICAL CORP·Filed 2016·Granted Oct 6, 2020·0 cites·25 claims
- 0949US2010197111A1Method of manufacturing memory device and method of manufacturing phase-change memory device using the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 1048US2025041232A1Microspheres comprising high-dose varenicline, method for preparing same, and pharmaceutical composition comprising sameAULBIO CO LTD·Filed 2021·Application pending·0 cites
- 1145US7851298B2Method for fabricating transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for the gate electrode formationHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 14, 2010·0 cites·8 claims
- 1243US2008003751A1Methods for forming dual poly gate of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1343US2009004816A1Method of forming isolation layer of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1442US2008160716A1Method for fabricating an isolation layer in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1542US2007012918A1Liquid crystal display device and optical film assembly for the liquid crystal display deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1642US2007004071A1Liquid crystal display and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1741US2007077717A1Method for forming transistor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 1841US2007052891A1Display panelKIM SANG-WOO·Filed 2006·Application pending·0 cites
- 1941US2013334670A1Semiconductor device and fabrication method thereofSK HYNIX INC·Filed 2012·Application pending·0 cites
- 2040US2007155105A1Method for forming transistor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2139US2008003790A1Method for forming a gate of a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
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