Inventor · disambiguated record
Tieh-Chiang Wu
Also filed as: WU TIEH CHIANG
61 granted patents·21 pending applications·219 citations·filing 2003–2024
98Inventor score
Files withMICRON TECHNOLOGY INC25NANYA TECHNOLOGY CORP14CHANGXIN MEMORY TECH INC13WU TIEH CHIANG13INOTERA MEMORIES INC10
Top patents by PatentIndex Score
82 records- 0198US9761559B1Semiconductor package and fabrication method thereofMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 12, 2017·39 cites·17 claims
- 0297US9570369B1Semiconductor package with sidewall-protected RDL interposer and fabrication method thereofINOTERA MEMORIES INC·Filed 2016·Granted Feb 14, 2017·17 cites·5 claims
- 0396US9704790B1Method of fabricating a wafer level packageMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 11, 2017·13 cites·9 claims
- 0495US8343829B2Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the sameNANYA TECHNOLOGY CORP·Filed 2011·Granted Jan 1, 2013·24 cites·7 claims
- 0594US9449935B1Wafer level package and fabrication method thereofINOTERA MEMORIES INC·Filed 2015·Granted Sep 20, 2016·11 cites·9 claims
- 0693US7994559B2Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Aug 9, 2011·23 cites·10 claims
- 0791US9472664B1Semiconductor device and manufacturing method thereofINOTERA MEMORIES INC·Filed 2015·Granted Oct 18, 2016·7 cites·13 claims
- 0890US10121849B2Methods of fabricating a semiconductor structureMICRON TECHNOLOGY INC·Filed 2015·Granted Nov 6, 2018·6 cites·15 claims
- 0990US10008461B2Semiconductor structure having a patterned surface structure and semiconductor chips including such structuresMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 26, 2018·5 cites·14 claims
- 1090US9768175B2Semiconductor devices comprising gate structure sidewalls having different anglesMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 19, 2017·5 cites·11 claims
- 1189US10128212B2Semiconductor package and fabrication method thereofMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 13, 2018·5 cites·18 claims
- 1287US10354966B2Methods of forming microelectronic structures having a patterned surface structureMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 16, 2019·3 cites·16 claims
- 1387US9735161B2Memory device and fabricating method thereofMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 15, 2017·4 cites·19 claims
- 1486US12342594B2Semiconductor structure and method for fabricating semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·1 cites·9 claims
- 1583US10950564B2Methods of forming microelectronic devices having a patterned surface structureMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 16, 2021·2 cites·18 claims
- 1682US10381302B2Semiconductor package with embedded MIM capacitor, and method of fabricating thereofMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 13, 2019·4 cites·14 claims
- 1781US10020310B2Memory device and fabricating method thereofMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 10, 2018·2 cites·20 claims
- 1879US10854514B2Microelectronic devices including two contactsMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 1, 2020·2 cites·19 claims
- 1979US9419001B1Method for forming cell contactINOTERA MEMORIES INC·Filed 2016·Granted Aug 16, 2016·3 cites·10 claims
- 2079US8501566B1Method for fabricating a recessed channel access transistor deviceCHOU CHUNG-YEN·Filed 2012·Granted Aug 6, 2013·6 cites·9 claims
- 2177US9343547B2Method for fabricating a recessed channel access transistor deviceNANYA TECHNOLOGY CORP·Filed 2015·Granted May 17, 2016·2 cites·3 claims
- 2276US9379197B1Recess array deviceINOTERA MEMORIES INC·Filed 2015·Granted Jun 28, 2016·2 cites·4 claims
- 2374US11640948B2Microelectronic devices and apparatuses having a patterned surface structureMICRON TECHNOLOGY INC·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 2470US9202921B2Semiconductor device and method of making the sameWU TIEH-CHIANG·Filed 2010·Granted Dec 1, 2015·3 cites·23 claims
- 2569US8659079B2Transistor device and method for manufacturing the sameLIAO WEI-MING·Filed 2012·Granted Feb 25, 2014·3 cites·6 claims
- 2669US8530306B2Method of forming a slit recess channel gateWU TIEH-CHIANG·Filed 2011·Granted Sep 10, 2013·2 cites·11 claims
- 2767US8865550B2Memory device having buried bit line and vertical transistor and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2014·Granted Oct 21, 2014·1 cites·18 claims
- 2866US12369315B2Semiconductor structure having silicide layer disposed on sidewalls of the bitlineCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·7 claims
- 2966US10388564B2Method for fabricating a memory device having two contactsMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 20, 2019·1 cites·14 claims
- 3066US8759907B2Memory device having buried bit line and vertical transistor and fabrication method thereofWU TIEH-CHIANG·Filed 2011·Granted Jun 24, 2014·1 cites·16 claims
- 3166US8525262B2Transistor with buried finsWU TIEH-CHIANG·Filed 2011·Granted Sep 3, 2013·2 cites·12 claims
- 3265US11024629B2Semiconductor device comprising gate structure sidewalls having different anglesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
- 3365US2025113584A1Semiconductor structure and preparation method thereforCXMT CORP·Filed 2024·Application pending·0 cites
- 3464US9397048B1Semiconductor structure and manufacturing method thereofINOTERA MEMORIES INC·Filed 2015·Granted Jul 19, 2016·1 cites·14 claims
- 3562US7078315B2Method for eliminating inverse narrow width effects in the fabrication of DRAM deviceNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 18, 2006·8 cites·7 claims
- 3661US10424583B2Methods of operating a memory deviceMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 24, 2019·0 cites·20 claims
- 3760US12400954B2Semiconductor structure and method of making the sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 26, 2025·0 cites·16 claims
- 3860US12336172B2Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·15 claims
- 3959US10468416B2Semiconductor device comprising gate structure sidewalls having different anglesMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 5, 2019·0 cites·16 claims
- 4059US8552478B2Corner transistor and method of fabricating the sameWU TIEH-CHIANG·Filed 2011·Granted Oct 8, 2013·1 cites·20 claims
- 4158US10741636B2Methods of fabricating a decoupling capacitor in a semiconductor structureMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 11, 2020·0 cites·16 claims
- 4256US10825783B2Semiconductor packages and devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 3, 2020·0 cites·19 claims
- 4356US8912065B2Method of fabricating semiconductor deviceWU TIEH-CHIANG·Filed 2012·Granted Dec 16, 2014·1 cites·15 claims
- 4454US9786514B2Semiconductor package with sidewall-protected RDL interposerMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 10, 2017·0 cites·11 claims
- 4553US11936179B2Electrostatic discharge protection circuitCHANGXIN MEMORY TECH INC·Filed 2022·Granted Mar 19, 2024·0 cites·15 claims
- 4653US8698235B2Slit recess channel gateNANYA TECHNOLOGY CORP·Filed 2013·Granted Apr 15, 2014·0 cites·7 claims
- 4753US2023420444A1Electrostatic discharge protection structure and chipCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 4852US12324212B2Semiconductor structure with interconnects and method for preparing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 3, 2025·0 cites·13 claims
- 4952US6875654B2Memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 5, 2005·4 cites·7 claims
- 5052US2015123195A1Recessed channel access transistor device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2013·Application pending·0 cites
Showing the top 50 of 82 patent records by PatentIndex Score.
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