Inventor · disambiguated record
Cyrus E. Tabery
Also filed as: TABERY CYRUS · TABERY CYRUS E · TABERY CYRUS EMIL
87 granted patents·11 pending applications·4,320 citations·filing 2001–2023
99Inventor score
Files withADVANCED MICRO DEVICES INC73ASML NETHERLANDS BV14SPANSION LLC3GLOBALFOUNDRIES INC2LIN MING-REN2
Top patents by PatentIndex Score
98 records- 0199US6706571B1Method for forming multiple structures in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·836 cites·19 claims
- 0299US6645797B1Method for forming fins in a FinFET device using sacrificial carbon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·273 cites·20 claims
- 0398US7015124B1Use of amorphous carbon for gate patterningADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 21, 2006·206 cites·26 claims
- 0498US6872647B1Method for forming multiple fins in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 29, 2005·186 cites·20 claims
- 0598US6673684B1Use of diamond as a hard mask materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 6, 2004·280 cites·20 claims
- 0698US6559017B1Method of using amorphous carbon as spacer material in a disposable spacer processADVANCED MICRO DEVICES INC·Filed 2002·Granted May 6, 2003·226 cites·20 claims
- 0797US6835662B1Partially de-coupled core and periphery gate module processADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 28, 2004·180 cites·13 claims
- 0897US6500756B1Method of forming sub-lithographic spaces between polysilicon linesADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 31, 2002·168 cites·20 claims
- 0996US7018868B1Disposable hard mask for memory bitline scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·95 cites·19 claims
- 1096US6787854B1Method for forming a fin in a finFET deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·113 cites·5 claims
- 1194US6605514B1Planar finFET patterning using amorphous carbonADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 12, 2003·87 cites·20 claims
- 1293US7207017B1Method and system for metrology recipe generation and review and analysis of design, simulation and metrology resultsADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 17, 2007·85 cites·25 claims
- 1393US6995437B1Semiconductor device with core and periphery regionsADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 7, 2006·69 cites·8 claims
- 1493US6864164B1Finfet gate formation using reverse trim of dummy gateADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 8, 2005·76 cites·17 claims
- 1593US6787439B2Method using planarizing gate material to improve gate critical dimension in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·67 cites·20 claims
- 1693US6563183B1Gate array with multiple dielectric properties and method for forming sameADVANCED MICRO DEVICES INC·Filed 2002·Granted May 13, 2003·113 cites·4 claims
- 1792US6855582B1FinFET gate formation using reverse trim and oxide polishADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·64 cites·19 claims
- 1892US6780708B1Method of forming core and periphery gates including two critical masking steps to form a hard mask in a core region that includes a critical dimension less than achievable at a resolution limit of lithographyADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 24, 2004·57 cites·13 claims
- 1992US6664154B1Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processesADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 16, 2003·67 cites·20 claims
- 2092US6656749B1In-situ monitoring during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 2, 2003·57 cites·11 claims
- 2190US11947266B2Method for controlling a manufacturing process and associated apparatusesASML NETHERLANDS BV·Filed 2019·Granted Apr 2, 2024·5 cites·20 claims
- 2290US6875664B1Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 5, 2005·47 cites·20 claims
- 2390US6555439B1Partial recrystallization of source/drain region before laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·53 cites·14 claims
- 2489US7194725B1System and method for design rule creation and selectionADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 20, 2007·57 cites·22 claims
- 2589US6680250B1Formation of deep amorphous region to separate junction from end-of-range defectsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·43 cites·12 claims
- 2688US7269804B2System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniquesADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 11, 2007·27 cites·15 claims
- 2788US6812106B1Reduced dopant deactivation of source/drain extensions using laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·38 cites·15 claims
- 2888US6790782B1Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removalADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 14, 2004·42 cites·20 claims
- 2987US12044980B2Method of manufacturing devicesASML NETHERLANDS BV·Filed 2019·Granted Jul 23, 2024·3 cites·20 claims
- 3086US7084071B1Use of multilayer amorphous carbon ARC stack to eliminate line warpage phenomenonADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 1, 2006·34 cites·23 claims
- 3186US7014966B2Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systemsADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 21, 2006·29 cites·22 claims
- 3286US6579809B1In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 17, 2003·34 cites·20 claims
- 3385US7029958B2Self aligned damascene gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 18, 2006·31 cites·17 claims
- 3482US11803127B2Method for determining root cause affecting yield in a semiconductor manufacturing processASML NETHERLANDS BV·Filed 2019·Granted Oct 31, 2023·3 cites·20 claims
- 3582US7657864B2System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniquesGLOBALFOUNDRIES INC·Filed 2007·Granted Feb 2, 2010·5 cites·15 claims
- 3681US8580660B2Double and triple gate MOSFET devices and methods for making sameLIN MING-REN·Filed 2012·Granted Nov 12, 2013·5 cites·20 claims
- 3781US6825115B1Post silicide laser thermal annealing to avoid dopant deactivationADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 30, 2004·28 cites·13 claims
- 3881US6780789B1Laser thermal oxidation to form ultra-thin gate oxideADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 24, 2004·24 cites·7 claims
- 3980US7313769B1Optimizing an integrated circuit layout by taking into consideration layout interactions as well as extra manufacturability marginADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 25, 2007·30 cites·20 claims
- 4080US6787476B1Etch stop layer for etching FinFET gate over a large topographyADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·21 cites·20 claims
- 4180US6771356B1Scatterometry of grating structures to monitor wafer stressADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·24 cites·18 claims
- 4279US8222680B2Double and triple gate MOSFET devices and methods for making sameLIN MING-REN·Filed 2002·Granted Jul 17, 2012·23 cites·15 claims
- 4379US6654659B1Quartz crystal monitor wafer for lithography and etch process monitoringADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 25, 2003·21 cites·31 claims
- 4478US7091088B1UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processingSPANSION LLC·Filed 2004·Granted Aug 15, 2006·26 cites·10 claims
- 4578US6743689B1Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensionsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 1, 2004·21 cites·15 claims
- 4677US6972576B1Electrical critical dimension measurement and defect detection for reticle fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 6, 2005·19 cites·25 claims
- 4777US6867080B1Polysilicon tilting to prevent geometry effects during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·19 cites·16 claims
- 4877US6855608B1Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·17 cites·24 claims
- 4977US6852455B1Amorphous carbon absorber/shifter film for attenuated phase shift maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 8, 2005·14 cites·18 claims
- 5076US6684172B1Sensor to predict void free films using various grating structures and characterize fill performanceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 27, 2004·23 cites·20 claims
Showing the top 50 of 98 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →