P

Inventor

FUJII SYUSO

JP34 patents
⚠️ This page may combine multiple inventors who share the name “FUJII SYUSO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

31 patents
US5119337AJun 2, 1992

Semiconductor memory device having burn-in test function

TOSHIBA KK60 citations96
US5233558AAug 3, 1993

Semiconductor memory device capable of directly reading the potential of bit lines

TOSHIBA KK27 citations93
US5019729AMay 28, 1991

TTL to CMOS buffer circuit

TOSHIBA KK39 citations93
US5734619AMar 31, 1998

Semiconductor memory device having cell array divided into a plurality of cell blocks

TOSHIBA KK30 citations92
US5726475AMar 10, 1998

Semiconductor device having different impurity concentration wells

TOSHIBA KK29 citations92
US5293055AMar 8, 1994

Semiconductor integrated circuit device

TOSHIBA KK28 citations92
US5231607AJul 27, 1993

Semiconductor memory device

TOSHIBA KK36 citations92
US5079613AJan 7, 1992

Semiconductor device having different impurity concentration wells

TOSHIBA KK37 citations92
US5066997ANov 19, 1991

Semiconductor device

TOSHIBA KK32 citations92
US5016224AMay 14, 1991

Semiconductor memory device

TOSHIBA KK39 citations92
US4994874AFeb 19, 1991

Input protection circuit for semiconductor integrated circuit device

TOSHIBA KK46 citations92
US4941031AJul 10, 1990

Dynamic memory device with improved wiring layer layout

TOSHIBA KK32 citations92
US4896055AJan 23, 1990

Semiconductor integrated circuit technology for eliminating circuits or arrays having abnormal operating characteristics

TOSHIBA KK25 citations92
US5970006AOct 19, 1999

Semiconductor memory device having cell array divided into a plurality of cell blocks

TOSHIBA KK14 citations82
US5594265AJan 14, 1997

Input protection circuit formed in a semiconductor substrate

TOSHIBA KK17 citations82
US5374838ADec 20, 1994

Semiconductor device having different impurity concentration wells

TOSHIBA KK19 citations82
US5260226ANov 9, 1993

Semiconductor device having different impurity concentration wells

TOSHIBA KK16 citations82
US5142492AAug 25, 1992

Semiconductor memory device

TOSHIBA KK19 citations82
US4769792ASep 6, 1988

Semiconductor memory device with voltage bootstrap

TOSHIBA KK22 citations82
US5949109ASep 7, 1999

Semiconductor device having input protection circuit

TOSHIBA KK10 citations74
US5862090AJan 19, 1999

Semiconductor memory device having cell array divided into a plurality of cell blocks

TOSHIBA KK7 citations74
US5420816AMay 30, 1995

Semiconductor memory apparatus with configured word lines to reduce noise

TOSHIBA KK18 citations74
US5238860AAug 24, 1993

Semiconductor device having different impurity concentration wells

TOSHIBA KK19 citations74
US5194762AMar 16, 1993

Mos-type charging circuit

TOSHIBA KK16 citations74
US5150188ASep 22, 1992

Reference voltage generating circuit device

TOSHIBA KK10 citations74
US4931992AJun 5, 1990

Semiconductor memory having barrier transistors connected between sense and restore circuits

TOSHIBA KK10 citations74
US4748597AMay 31, 1988

Semiconductor memory device with redundancy circuits

TOSHIBA KK15 citations74
US5075752ADec 24, 1991

Bi-cmos semiconductor device having memory cells formed in isolated wells

TOSHIBA KK5 citations63
US6104233AAug 15, 2000

Substrate structure of semi-conductor device

TOSHIBA KK3 citations62
US5016071AMay 14, 1991

Dynamic memory device

TOSHIBA KK5 citations62
USRE36236EJun 29, 1999

Semiconductor memory device

TOSHIBA KK1 citations52

TOKYO SHIBAURA ELECTRIC CO

2 patents

KANUSHIKI KAISHA TOSHIBA

1 patent