Inventor
FUJII SYUSO
JP34 patents
⚠️ This page may combine multiple inventors who share the name “FUJII SYUSO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
31 patentsUS5119337AJun 2, 1992
Semiconductor memory device having burn-in test function
TOSHIBA KK60 citations96
US5233558AAug 3, 1993
Semiconductor memory device capable of directly reading the potential of bit lines
TOSHIBA KK27 citations93
US5019729AMay 28, 1991
TTL to CMOS buffer circuit
TOSHIBA KK39 citations93
US5734619AMar 31, 1998
Semiconductor memory device having cell array divided into a plurality of cell blocks
TOSHIBA KK30 citations92
US5726475AMar 10, 1998
Semiconductor device having different impurity concentration wells
TOSHIBA KK29 citations92
US5293055AMar 8, 1994
Semiconductor integrated circuit device
TOSHIBA KK28 citations92
US5231607AJul 27, 1993
Semiconductor memory device
TOSHIBA KK36 citations92
US5079613AJan 7, 1992
Semiconductor device having different impurity concentration wells
TOSHIBA KK37 citations92
US5066997ANov 19, 1991
Semiconductor device
TOSHIBA KK32 citations92
US5016224AMay 14, 1991
Semiconductor memory device
TOSHIBA KK39 citations92
US4994874AFeb 19, 1991
Input protection circuit for semiconductor integrated circuit device
TOSHIBA KK46 citations92
US4941031AJul 10, 1990
Dynamic memory device with improved wiring layer layout
TOSHIBA KK32 citations92
US4896055AJan 23, 1990
Semiconductor integrated circuit technology for eliminating circuits or arrays having abnormal operating characteristics
TOSHIBA KK25 citations92
US5970006AOct 19, 1999
Semiconductor memory device having cell array divided into a plurality of cell blocks
TOSHIBA KK14 citations82
US5594265AJan 14, 1997
Input protection circuit formed in a semiconductor substrate
TOSHIBA KK17 citations82
US5374838ADec 20, 1994
Semiconductor device having different impurity concentration wells
TOSHIBA KK19 citations82
US5260226ANov 9, 1993
Semiconductor device having different impurity concentration wells
TOSHIBA KK16 citations82
US5142492AAug 25, 1992
Semiconductor memory device
TOSHIBA KK19 citations82
US4769792ASep 6, 1988
Semiconductor memory device with voltage bootstrap
TOSHIBA KK22 citations82
US5949109ASep 7, 1999
Semiconductor device having input protection circuit
TOSHIBA KK10 citations74
US5862090AJan 19, 1999
Semiconductor memory device having cell array divided into a plurality of cell blocks
TOSHIBA KK7 citations74
US5420816AMay 30, 1995
Semiconductor memory apparatus with configured word lines to reduce noise
TOSHIBA KK18 citations74
US5238860AAug 24, 1993
Semiconductor device having different impurity concentration wells
TOSHIBA KK19 citations74
US5194762AMar 16, 1993
Mos-type charging circuit
TOSHIBA KK16 citations74
US5150188ASep 22, 1992
Reference voltage generating circuit device
TOSHIBA KK10 citations74
US4931992AJun 5, 1990
Semiconductor memory having barrier transistors connected between sense and restore circuits
TOSHIBA KK10 citations74
US4748597AMay 31, 1988
Semiconductor memory device with redundancy circuits
TOSHIBA KK15 citations74
US5075752ADec 24, 1991
Bi-cmos semiconductor device having memory cells formed in isolated wells
TOSHIBA KK5 citations63
US6104233AAug 15, 2000
Substrate structure of semi-conductor device
TOSHIBA KK3 citations62
US5016071AMay 14, 1991
Dynamic memory device
TOSHIBA KK5 citations62
USRE36236EJun 29, 1999
Semiconductor memory device
TOSHIBA KK1 citations52