Inventor
KUO TUNG-CHENG
TW30 patents
⚠️ This page may combine multiple inventors who share the name “KUO TUNG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
27 patentsUS6545309B1Apr 8, 2003
Nitride read-only memory with protective diode and operating method thereof
MACRONIX INT CO LTD155 citations99
US6417053B1Jul 9, 2002
Fabrication method for a silicon nitride read-only memory
MACRONIX INT CO LTD152 citations99
US6282118B1Aug 28, 2001
Nonvolatile semiconductor memory device
MACRONIX INT CO LTD174 citations98
US6469342B1Oct 22, 2002
Silicon nitride read only memory that prevents antenna effect
MACRONIX INT CO LTD143 citations96
US6818956B2Nov 16, 2004
Non-volatile memory device and fabrication method thereof
MACRONIX INT CO LTD22 citations92
US6555866B1Apr 29, 2003
Non-volatile memory and fabrication thereof
MACRONIX INT CO LTD24 citations92
US6477085B1Nov 5, 2002
Method for operating non-volatile memory with symmetrical dual-channels
MACRONIX INT CO LTD40 citations92
US6285586B1Sep 4, 2001
Nonvolatile static random access memory
MACRONIX INT CO LTD42 citations92
US6713315B2Mar 30, 2004
Mask read-only memory and fabrication thereof
MACRONIX INT CO LTD13 citations84
US6436800B1Aug 20, 2002
Method for fabricating a non-volatile memory with a shallow junction
MACRONIX INT CO LTD16 citations83
US6680227B2Jan 20, 2004
Non-volatile memory device and fabrication method thereof
MACRONIX INT CO LTD5 citations74
US6642113B1Nov 4, 2003
Non-volatile memory capable of preventing antenna effect and fabrication thereof
MACRONIX INT CO LTD7 citations74
US6559010B1May 6, 2003
Method for forming embedded non-volatile memory
MACRONIX INT CO LTD12 citations73
US6787416B2Sep 7, 2004
Non volatile embedded memory with poly protection layer
MACRONIX INT CO LTD10 citations72
US6448101B1Sep 10, 2002
Method of integrating a photodiode and a CMOS transistor with a non-volatile memory
MACRONIX INT CO LTD7 citations70
US6940757B2Sep 6, 2005
Structure and operating method for nonvolatile memory cell
MACRONIX INT CO LTD5 citations63
US6898127B2May 24, 2005
Method for fabricating embedded flash ROM structure having code cells and data cells and operations for the same
MACRONIX INT CO LTD3 citations63
US6812507B2Nov 2, 2004
Non-volatile memory capable of preventing antenna effect and fabrication thereof
MACRONIX INT CO LTD2 citations63
US6620694B1Sep 16, 2003
Method of making non volatile memory with a protective metal line
MACRONIX INT CO LTD3 citations63
US6511882B1Jan 28, 2003
Method for preventing the leakage path in embedded non-volatile memory
MACRONIX INT CO LTD6 citations62
US6388913B1May 14, 2002
Method for detecting polarization of a ferroelectric capacitor in a ferroelectric memory and thereof structure
MACRONIX INT CO LTD5 citations62
US6385077B1May 7, 2002
Non-volatile memory cell and sensing method
MACRONIX INT CO LTD4 citations62
US6876044B2Apr 5, 2005
UV-programmable P-type mask ROM
MACRONIX INT CO LTD0 citations52
US6797635B2Sep 28, 2004
Fabrication method for lines of semiconductor device
MACRONIX INT CO LTD0 citations52
US6794701B2Sep 21, 2004
Non-volatile memory
MACRONIX INT CO LTD1 citations52
US6771539B2Aug 3, 2004
Method for operating non-volatile memory with symmetrical dual-channels
MACRONIX INT CO LTD0 citations52
US6664164B2Dec 16, 2003
UV-programmed P-type Mask ROM and fabrication thereof
MACRONIX INT CO LTD1 citations52