Inventor
FU QIAN
US63 patents
⚠️ This page may combine multiple inventors who share the name “FU QIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
33 patentsUS9583357B1Feb 28, 2017
Systems and methods for reverse pulsing
LAM RES CORP98 citations99
US9761459B2Sep 12, 2017
Systems and methods for reverse pulsing
LAM RES CORP93 citations98
US9991128B2Jun 5, 2018
Atomic layer etching in continuous plasma
LAM RES CORP26 citations93
US10446394B2Oct 15, 2019
Spacer profile control using atomic layer deposition in a multiple patterning process
LAM RES CORP8 citations84
US9824896B2Nov 21, 2017
Methods and systems for advanced ion control for etching processes
LAM RES CORP4 citations84
US7629255B2Dec 8, 2009
Method for reducing microloading in etching high aspect ratio structures
LAM RES CORP8 citations84
US9275872B2Mar 1, 2016
Method for forming stair-step structures
LAM RES CORP6 citations83
US9741563B2Aug 22, 2017
Hybrid stair-step etch
LAM RES CORP10 citations80
US10943789B2Mar 9, 2021
Methods and systems for advanced ion control for etching processes
LAM RES CORP2 citations73
US10658194B2May 19, 2020
Silicon-based deposition for semiconductor processing
LAM RES CORP2 citations73
US10242845B2Mar 26, 2019
Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber
LAM RES CORP2 citations73
US9941123B1Apr 10, 2018
Post etch treatment to prevent pattern collapse
LAM RES CORP3 citations73
US9767991B2Sep 19, 2017
Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
LAM RES CORP2 citations73
US9646844B2May 9, 2017
Method for forming stair-step structures
LAM RES CORP2 citations72
US9466502B2Oct 11, 2016
Line width roughness improvement with noble gas plasma
LAM RES CORP3 citations71
US9263284B2Feb 16, 2016
Line width roughness improvement with noble gas plasma
LAM RES CORP3 citations71
US10354888B2Jul 16, 2019
Method and apparatus for anisotropic tungsten etching
LAM RES CORP2 citations69
US9633867B2Apr 25, 2017
Method and apparatus for anisotropic tungsten etching
LAM RES CORP3 citations69
US9129902B2Sep 8, 2015
Continuous plasma ETCH process
LAM RES CORP3 citations63
US12437966B2Oct 7, 2025
Systems and methods for reverse pulsing
LAM RES CORP0 citations62
US12165872B2Dec 10, 2024
Methods and systems for advanced ion control for etching processes
LAM RES CORP0 citations62
US11798785B2Oct 24, 2023
Systems for reverse pulsing
LAM RES CORP0 citations62
US11049726B2Jun 29, 2021
Methods and systems for advanced ion control for etching processes
LAM RES CORP0 citations62
US7976641B1Jul 12, 2011
Extending storage time of removed plasma chamber components prior to cleaning thereof
LAM RES CORP3 citations62
US7682979B2Mar 23, 2010
Phase change alloy etch
LAM RES CORP3 citations59
US10177003B2Jan 8, 2019
Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
LAM RES CORP0 citations52
US9859127B1Jan 2, 2018
Line edge roughness improvement with photon-assisted plasma process
LAM RES CORP0 citations52
US9691625B2Jun 27, 2017
Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
LAM RES CORP0 citations52
US9607848B2Mar 28, 2017
Etch process with pre-etch transient conditioning
LAM RES CORP0 citations52
US9530658B2Dec 27, 2016
Continuous plasma etch process
LAM RES CORP0 citations52
US9418869B2Aug 16, 2016
Method to etch a tungsten containing layer
LAM RES CORP0 citations52
US9257296B2Feb 9, 2016
Etch process with pre-etch transient conditioning
LAM RES CORP0 citations52
US9142417B2Sep 22, 2015
Etch process with pre-etch transient conditioning
LAM RES CORP0 citations52
APPLIED MATERIALS INC
9 patentsUS12334354B2Jun 17, 2025
Sidewall passivation for plasma etching
APPLIED MATERIALS INC2 citations74
US12469715B2Nov 11, 2025
Dry etching with etch byproduct self-cleaning
APPLIED MATERIALS INC0 citations62
US12148475B2Nov 19, 2024
Selection gate separation for 3D NAND
APPLIED MATERIALS INC0 citations62
US12009218B2Jun 11, 2024
Pulsed etch process
APPLIED MATERIALS INC0 citations62
US11935751B2Mar 19, 2024
Boron nitride for mask patterning
APPLIED MATERIALS INC0 citations59
US12564022B2Feb 24, 2026
Carbon hardmask opening using boron nitride mask
APPLIED MATERIALS INC0 citations58
US12315733B2May 27, 2025
Enhanced etch selectivity using halides
APPLIED MATERIALS INC0 citations58
US12125699B2Oct 22, 2024
Selective carbon deposition on top and bottom surfaces of semiconductor substrates
APPLIED MATERIALS INC0 citations58
US12463053B2Nov 4, 2025
Method for etching high aspect ratio structures
APPLIED MATERIALS INC0 citations57
LEE WONCHUL
2 patentsFU QIAN
2 patentsCHENG SHIH-YUAN
1 patentKAMP TOM
1 patentMIKHAYLICHENKO KATRINA
1 patentBAE IN DEOG
1 patentShowing the top 50 of 63 patents by PatentIndex Score.